Datasheet MBRS130TRPBF DataSheet (Vishay)

Page 1
SMB
Schottky Rectifier, 1.0 A
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
Cathode
Anode
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
VS-MBRS130TRPbF
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
1.0 A
30 V
15 mA at 125 °C
DESCRIPTION
The VS-MBRS130TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
30 V
tp = 5 μs sine 230 A
1.0 Apk, TJ = 125 °C 0.42 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS130TRPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current, T
Non-repetitive avalanche energy E
Repetitive avalanche current I
= 25 °C
J
F(AV)
I
FSM
AR
AS
50 % duty cycle at TL = 147 °C, rectangular waveform 1.0
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 50
TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
Current decaying linearly to zero in 1 μs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
RRM
applied
870
1.0 A
A
Document Number: 94318 For technical questions, contact: diodestech@vishay.com Revision: 05-Mar-10 1
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Page 2
VS-MBRS130TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop V
FM
(1)
1 A
2 A 0.67
2 A 0.52
TJ = 25 °C
Maximum reverse leakage current I
RM
Maximum junction capacitance C
Typical series inductance L
T
S
= 100 °C 5.0
J
= 125 °C 15
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Measured lead to lead 5 mm from package body 2.0 nH
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.6
0.42
0.5
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
(1)
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
J
Stg
(2)
R
thJL
DC operation
R
thJA
Approximate weight
Marking device Case style SMB (similar to DO-214AA) V13
Notes
dP
(1)
------------­dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------< R
thJA
- 55 to 125
- 55 to 150
25
80
0.10 g
0.003 oz.
V
mAT
°C
°C/W
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Document Number: 94318
2 Revision: 05-Mar-10
Page 3
VS-MBRS130TRPbF
10
TJ = 125 °C
T
= 25 °C
0.8
J
1.0
1.2
1.0
- Instantaneous
F
I
Forward Current (A)
0.1
0.2
0.4
V
0.6
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
TJ = 125 °C
1.0
T
= 100 °C
J
= 75 °C
T
0.1
0.01
0.001
- Reverse Current (mA)
R
I
J
T
= 50 °C
J
T
= 25 °C
J
Schottky Rectifier, 1.0 A
130
120
110
100
90
80
Allowable Lead Temperature (°C)
1.4
70
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig. 4 - Maximum Average Forward Current vs.
0.7
0.6
0.5
0.4
0.3
0.2
Average Power Loss (W)
0.1
Vishay High Power Products
D = 0.20
DC
Square wave (D = 0.50) Rated V
applied
R
See note (1)
I
- Average Forward Current (A)
F(AV)
Allowable Lead Temperature
RMS limit
D = 0.25 D = 0.33 D = 0.50 D = 0.75
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
DC
DC
0.0001
0
10 20
V
- Reverse Voltage (V)
R
30
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
- Junction Capacitance (pF)
T
C
10
0
10
V
- Reverse Voltage (V)
R
20
30
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
0
0
0.4
0.2
I
- Average Forward Current (A)
F(AV)
0.6
0.8
1.0
1.2
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
100
At any rated load condition and with rated V
10
10
following surge
- Non-Repetitive Surge Current (A)
FSM
I
applied
RRM
100 1000
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
1.4
1.6
10 000
Pulse Duration
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I
x VFM at (I
F(AV)
REV
) x R
;
thJC
/D) (see fig. 6); Pd
F(AV)
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
R
Document Number: 94318 For technical questions, contact: diodestech@vishay.com
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Revision: 05-Mar-10 3
Page 4
VS-MBRS130TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ORDERING INFORMATION TABLE
Device code
Dimensions www.vishay.com/doc?95017
Part marking information www.vishay.com/doc?95029
Packaging information www.vishay.com/doc?95034
VS- MBR S 1 30 TR PbF
51324
67
1 - HPP product suffix
2 - Schottky MBR series
3 - S = SMB
4 - Current rating (1 = 1 A)
5 - Voltage rating (30 = 30 V)
6 - TR = Tape and reel (3000 pieces)
- PbF = Lead (Pb)-free
7
LINKS TO RELATED DOCUMENTS
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Document Number: 94318
Page 5
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay High Power Products
SMB
2.15 (0.085)
1.80 (0.071)
2.40 (0.094)
1.90 (0.075)
1.30 (0.051)
0.76 (0.030)
4.70 (0.185)
4.10 (0.161)
5.60 (0.220)
5.00 (0.197)
3.80 (0.150)
3.30 (0.130)
0.30 (0.012)
0.15 (0.006)
1
Polarity Part Number
1
2.5 TYP.
(0.098 TYP.)
2.0 TYP.
(0.079 TYP.)
2
2
Soldering pad
4.2 (0.165)
4.0 (0.157)
Document Number: 95017 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 25-Jun-07 For technical questions concerning module products, contact: ind-modules@vishay.com
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1
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Legal Disclaimer Notice
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