Datasheet MBRS 130LT3G ONS Datasheet

MBRS130LT3G,
SBRS8130LT3G

Schottky Power Rectifier

Surface Mount Power Package

This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.

Features

 Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, T

= 25C)

J

 Small Compact Surface Mountable Package with J−Bend Leads
 Highly Stable Oxide Passivated Junction
 Guard−Ring for Stress Protection
 ESD Ratings:

 Human Body Model = 3B (> 16000 V)
 Machine Model = C (> 400 V)

 AEC−Q101 Qualified and PPAP Capable
 SBRS8 Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 All Packages are Pb−Free*

Mechanical Characteristics

 Case: Epoxy, Molded
 Weight: 100 mg (approximately)
 Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

 Lead and Mounting Surface Temperature for Soldering Purposes:

260C Max. for 10 Seconds

 Cathode Polarity Band

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SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERE
30 VOLTS

SMB

CASE 403A

MARKING DIAGRAM

AYWW

1BL3G

G

1BL3 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2012

January, 2012 − Rev. 9

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

MBRS130LT3G SMB

SBRS8130LT3G SMB

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

(Pb−Free)

(Pb−Free)

Tape & Reel

Tape & Reel

MBRS130LT3/D

†

2,500 /

2,500 /

MBRS130LT3G, SBRS8130LT3G

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Forward Current

T

= 120C

L

TL = 110C

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Operating Junction Temperature T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance,

Junction−to−Lead

Thermal Resistance,

Junction−to−Ambient (T
Junction−to−Ambient (TA = 25C, 1” Pad, 1 oz copper)

= 25C, Min Pad, 1 oz copper)

A

V

V

I

F(AV)

I

Y

R

RRM

RWM

V

R

FSM

J

JL

q

JA

30 V

A

1.0

2.0

A

40

−65 to +125 C

C/W

12

C/W

228.8

71.3

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 1)

(i

= 1.0 A, TJ = 25C)

F

(iF = 2.0 A, TJ = 25C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, T
(Rated dc Voltage, TJ = 100C)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2%.

10

1

(A)

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

, INSTANTANEOUS FORWARD CURRENT

F

I

= 25C)

J

TJ = 100C

25C

VF, INSTANTANEOUS VOLTAGE (V)

V

F

0.395

0.445

I

R

1.0
10

10

1

CURRENT (A)

TJ = 100C

25C

0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

, MAXIMUM INSTANTANEOUS FORWARD

F

I

VF, MAXIMUM INSTANTANEOUS VOLTAGE (V)

V

mA

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

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2

MBRS130LT3G, SBRS8130LT3G

100

10

1.0

0.1

, IREVERSE CURRENT (mA)

0.01

R

I

TJ = 100C

25C

0.001
0 3 6 9 12 15 18 21 24 27 30

, REVERSE VOLTAGE (V)

V

R

Figure 3. Typical Reverse Leakage Current

2

1.8

1.6

1.4

1.2

SQUARE WAVE

1

0.8

0.6

0.4

0.2

, AVERAGE FORWARD CURRENT (A)

0

100 105 110 115 120 125 130

F(AV)

I

DC

, CASE TEMPERATURE (C)

T

C

100

10

1.0

TJ = 100C

25C

0.1

, IREVERSE CURRENT (mA)

0.01

R

I

0.001
0 3 6 9 12 15 18 21 24 27 30

, REVERSE VOLTAGE (V)

V

R

Figure 4. Typical Maximum Reverse Leakage

Curent

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

, AVERAGE POWER DISSIPATION (W)

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

F(AV)

P

, AVERAGE FORWARD CURRENT (A)

I

F(AV)

SQUARE

DC

Figure 5. Current Derating (Case)

400

350

300

250

200

150

100

C, CAPACITANCE (pF)

50

0

0 4 8 12162024 2832

Figure 6. Typical Power Dissipation

NOTE: TYPICAL CAPACITANCE

V

, REVERSE VOLTAGE (VOLTS)

R

AT 0 V = 290 pF

Figure 7. Typical Capacitance

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3

1000

100

10

MBRS130LT3G, SBRS8130LT3G

D = 0.5

0.2

0.1

0.05

0.02

0.01

1

EFFECTIVE TRANSIENT THERMAL RESISTANCE

100

EFFECTIVE TRANSIENT THERMAL RESISTANCE

0.1

10

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

SINGLE PULSE

t, TIME (s)

Figure 8. Thermal Response, Min Pad

t, TIME (s)

Figure 9. Thermal Response, 1 Inch Pad

10.010.00001

10.010.00001

100 1000100.10.0010.00010.000001

100 1000100.10.0010.00010.000001

275

250

225

200

175

150

125

100

qJA (C/W)

75

50

25

0

0 100 200 300 400 500 600 700

2

COPPER AREA (mm

)

1.0 oz

2.0 oz

2.0
Power based on TA = 25C

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

POWER DISSIPATION (W)

0.2

0

0 100 200 300 400 500 600 700

2

COPPER AREA (mm

)

Figure 10. Thermal Resistance vs. Copper Area Figure 11. Power Dissipation vs. Copper Area

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4

2.0 oz

1.0 oz

H

E

E

POLARITY INDICATOR
OPTIONAL AS NEEDED

MBRS130LT3G, SBRS8130LT3G

PACKAGE DIMENSIONS

SMB

CASE 403A−03

ISSUE H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

DIMAMIN NOM MAX MIN

b

D

A1 0.05 0.10 0.19 0.002

b 1.96 2.03 2.20 0.077
c 0.15 0.23 0.31 0.006
D

D 3.30 3.56 3.95 0.130
E 4.06 4.32 4.60 0.160

H

E

L 0.76 1.02 1.60 0.030

L1

MILLIMETERS

1.90 2.20 2.28 0.075

5.21 5.44 5.60 0.205 0.214 0.220

0.51 REF

A

INCHES

NOM MAX

0.087 0.090

0.004 0.007

0.080 0.087

0.009 0.012

0.140 0.156

0.170 0.181

0.040 0.063

0.020 REF

L

L1

c

A1

SOLDERING FOOTPRINT*

2.261

0.089

2.743

0.108

2.159

0.085

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ǒ

inches

mm

Ǔ

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MBRS130LT3/D

5