Datasheet LYM676-PS, LYM676-P, LYM676-NR, LSM676-Q, LSM676-P Datasheet (Siemens)

Hyper Mini TOPLED

®

Hyper-Bright LED

Besondere Merkmale

● Gehäusefarbe: weiß

● als optischer Indikator einsetzbar

● zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung

● für alle SMT-Bestück- und Löttechniken geeignet

● gegurtet (8-mm-Filmgurt)

Features

LS M676, LA M676, LO M676

LY M676

● color of package: white

● for use as optical indicator

● for backlighting, optical coupling into light pipes and lenses

● suitable for all SMT assembly and soldering methods

● available taped on reel (8 mm tape)

VPL06927

Semiconductor Group 1 1998-11-12

LS M676, LA M676, LO M676

LY M676

Typ

Type

LS M676-MQ
LS M676-N
LS M676-P
LS M676-Q
LS M676-NR

LA M676-NR
LA M676-P
LA M676-Q
LA M676-R
LA M676-PS

LO M676-NR
LO M676-P
LO M676-Q
LO M676-R
LO M676-PS

Emissions­farbe
Color of
Emission

Farbe der Licht­austrittsfläche
Color of the Light
Emitting
Area

Lichtstärke

Luminous
Intensity

I

= 20 mA

F

I

(mcd)

V

super-red colorless clear 16 ... 125

25 ... 50
40 ... 80
63 ... 125
25 ... 200

amber colorless clear 25 ... 200

40 ... 80
63 ... 125

100 ... 200

40 ... 320

orange colorless clear 25 ... 200

40 ... 80
63 ... 125

100 ... 200

40 ... 320

Lichtstrom

Luminous
Flux

I

= 20 mA

F

ΦV (mlm)

­100 (typ.)
180 (typ.)
300 (typ.)

-

­180 (typ.)
300 (typ.)
450 (typ.)

­180 (typ.)
300 (typ.)
450 (typ.)

-

Bestellnummer

Ordering Code

Q62703-Q3285
Q62703-Q3288
Q62703-Q3286
Q62703-Q3287
Q62703-Q3289

Q62703-Q3536
Q62703-Q3537
Q62703-Q3538
Q62703-Q3539
Q62703-Q3540

Q62703-Q3290
Q62703-Q3291
Q62703-Q3292
Q62703-Q3293
Q62703-Q3294

LY M676-NR
LY M676-P
LY M676-Q
LY M676-R
LY M676-PS

yellow colorless clear 25 ... 200

40 ... 80
63 ... 125

100 ... 200

40 ... 320

Streuung der Lichtstärke in einer Verpackungseinheit I
Luminous intensity ratio in one packaging unit I

V max

/ I

V max

V min

/ I

V min

≤ 2.0.

­180 (typ.)
300 (typ.)
450 (typ.)

-

≤ 2.0.

Q62703-Q3295
Q62703-Q3296
Q62703-Q3297
Q62703-Q3298
Q62703-Q3299

Semiconductor Group 2 1998-11-12

Grenzwerte
Maximum Ratings

LS M676, LA M676, LO M676

LY M676

Bezeichnung
Parameter

Betriebstemperatur
Operating temperature range

Lagertemperatur
Storage temperature range

Sperrschichttemperatur
Junction temperature

Durchlaßstrom
Forward current

Stoßstrom
Surge current

t ≤ 10 µs, D = 0.005

Sperrspannung
Reverse voltage

Verlustleistung
Power dissipation

Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-board*) (Padgröße ≥ 16 mm2)
mounted on PC board*) (pad size ≥ 16 mm2)

1)

1)

Symbol
Symbol

T

op

T

stg

T

j

I

F

I

FM

V

R

P

tot

R

th JA

Werte

Values

Einheit
Unit

LS, LA, LO LY

– 55 ... + 100 ˚C

– 55 ... + 100 ˚C

+ 100 ˚C

30 20 mA

to be defined A

3V

80

580

2)

2)

2)

55

mW

500 K/W

1)

Belastung in Sperrichtung sollte vermieden werden.

1)

Reverse biasing should be avoided.

2)

vorläufig/preliminary

)

*

PC-board: FR4

Semiconductor Group 3 1998-11-12

Kennwerte (TA = 25 ˚C)
Characteristics

LS M676, LA M676, LO M676

LY M676

Bezeichnung
Parameter

Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)

I

= 20 mA

F

Dominantwellenlänge (typ.)
Dominant wavelength (typ.)

I

= 20 mA

F

Spektrale Bandbreite bei 50% I
Spectral bandwidth at 50% I

I

= 20 mA

F

rel max

rel max

(typ.)
(typ.)

Abstrahlwinkel bei 50% Iv (Vollwinkel)
Viewing angle at 50% I

v

Durchlaßspannung (typ.)
Forward voltage (max.)

I

= 20 mA

F

Sperrstrom (typ.)
Reverse current (max.)

V

= 3 V

R

Temperaturkoeffizient von λ
Temperature coefficient of λ

Temperaturkoeffizient von λ

dom(IF
dom(IF

,

peak

= 20 mA)
= 20 mA)

IF = 20 mA (typ.)

Temperature coefficient of λ

peak

,

IF = 20 mA (typ.)

Symbol
Symbol

Werte

Values

Einheit
Unit

LS LA LO LY

λ

λ

peak

dom

645 622 610 591 nm

632 615 605 587 nm

∆λ 16 16 16 15 nm

2ϕ 120 120 120 120 Grad

deg.

V
V

I

R

I

R

TC

TC

F
F

λ

λ

2.0

2.6

2.0

2.6

2.0

2.6

2.0

2.6

V
V

0.01100.01100.01100.0110µA
µA

0.014 0.062 0.067 0.096 nm/K

0.14 0.13 0.13 0.13 nm/K

Temperaturkoeffizient von VF, IF = 20 mA (typ.)

TC

V

– 1.95 – 1.78 – 1.67 – 2.51 mV/K

Temperature coefficient of VF, IF = 20 mA (typ.)

Semiconductor Group 4 1998-11-12

LS M676, LA M676, LO M676

LY M676

Relative spektrale Emission I

= f (λ), TA = 25 ˚C, IF = 10 mA

rel

Relative spectral emission

V(λ) = spektrale Augenempfindlichkeit

Standard eye response curve

100

%

Ι

rel

80

60

40

20

OHL00235

V

λ

yellow
orange
amber
super-red

0

400

450 500 550 600 650 700nm

Abstrahlcharakteristik I
Radiation characteristic

50˚

60˚

70˚

80˚

= f (ϕ)

rel

λ

0˚10˚20˚40˚ 30˚

ϕ

1.0

0.8

0.6

0.4

0.2

OHL01660

90˚

100˚

1.0 0.8 0.6 0.4

0

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

Semiconductor Group 5 1998-11-12

LS M676, LA M676, LO M676

LY M676

Durchlaßstrom IF = f (VF)
Forward current

T

= 25 ˚C

A

2

10

mA

Ι

5

F

1

10

5

0

10

5

-1

10

1.4 1.8 2.2 2.6 3.0 V 3.4

1.0

OHL00232

V

F

Relative Lichtstärke IV / I

V(20 mA)

Relative luminous intensity

T

= 25 ˚C

A

1

10

Ι

V

Ι

V

(20 mA)

0

10
5

-1

10

5

superred
yellow
orange/amber

10

-2

5

-3

10

10

-1

0

10

55mA

= f (IF)

1

10

OHL00233

10

Ι

F

2

Maximal zulässiger Durchlaßstrom
Max. permissible forward current

I

= f (TA)

F

35

mA

Ι

F

30

25

yellow

20

15

10

5

0

0 20 40 60 80 C 100

OHL00248

Relative Lichtstärke IV / I

V(25 ˚C)

= f (TA)

Relative luminous intensity

I

= 20 mA

F

OHL00238

Ι

V

Ι

V

(25 C)

2.0

1.6
orange

yellow
amber
super-red

1.2

0.8

orange

0.4

0

-20 0 20 40 60 C 100

T

A

yellow
amber

super-red

T

A

Semiconductor Group 6 1998-11-12

LS M676, LA M676, LO M676

LY M676

Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LS, LA, LO

Duty cycle D = parameter, TA = 25 ˚C

Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LY

Duty cycle D = parameter, TA = 25 ˚C

Maßzeichnung (Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)

1.4

1.2

0.5

0.3

Cathode marking

2.1

2.1

2.3

Cathode
marking

1.9

1.0

0.8

1.5

1.3

0.15

0.05

Kathodenkennung: abgeschrägte Ecke
Cathode mark: bevelled edge

typ. 1.5 x 1.0

GPL06928

Semiconductor Group 7 1998-11-12