Page 1
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KSP44/45
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Electrical Characteristics
Ta=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSP44
: KSP45
500
400
V
V
V
CEO
Collector-Emitter Voltage
: KSP44
: KSP45
400
350
V
V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 300 mA
P
C
Collector Power Dissipation (Ta=25°C) 625 mW
P
C
Collector Power Dissipation (TC=25°C) 1.5 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP44
: KSP45
IC=100µA, IB=0
500
400
V
V
BV
CEO
* Collector -Emitter Breakdown Voltage
: KSP44
: KSP45
IC=1mA, IB=0
400
350
V
V
BV
EBO
Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
I
CBO
Collector Cut-off Current
: KSP44
: KSP45
V
CB
=400V, IE=0
V
CB
=320V, IE=0
0.1
0.1
µA
µA
I
CES
Collector Cut-off Current
: KSP44
: KSP45
V
CE
=400V, IB=0
V
CE
=320V, IB=0
0.5
0.5
µA
µA
I
EBO
Emitter Cut-off Current VEB=4V, IC=0 0.1 µA
h
FE
* DC Current Gain VCE=10V, IC=1mA
V
CE
=10V, IC=10mA
V
CE
=10V, IC=50mA
V
CE
=10V, IC=100mA
40
50
45
40
200
V
CE
(sat) * Col l ector-Emitter Saturation Voltage IC=1mA, IB=0.1mA
I
C
=10mA, IB=1mA
I
C
=50mA, IB=5mA
0.4
0.5
0.75
V
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA 0.75 V
C
ob
Output Capacitance VCB=20V, IE=0, f=1MHz 7 pF
KSP44/45
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
=KSP44: 400V
KSP45: 350V
• Collector Power Dissipation: P
C
(max)=625mW
1. Emitter 2. Base 3. Collector
TO-92
1
Page 2
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KSP44/45
Typical Characteristics
Figure 1. DC current Gain Figure 2. Turn-On Switching Times
Figure 3. Turn-Off Switching Times Figure 4. Capacitance
Figure 5. On Voltage Figure 6. Collector Saturation Region
1 10 100 1000 10000
-40
-20
0
20
40
60
80
100
120
140
160
VCE=10V
h
FE
, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100
0.1
1
10
td
tf
VCC=150V
IC/IB=10
Ta=25
℃
VBE(off)=4V
t[us], TIME
IC[mA], COLLECTOR CURRENT
110100
0.1
1
10
100
tf
ts
VCC=150V
IC/IB=10
Ta=25
℃
t[us], TIME
IC[mA], COLLECTOR CURRENT
0.1 1 10 100 1000
1
10
100
1000
Cob
C
ib
Ta=25
℃
f=1MHz
C
ib
[pF],C
ob
[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
VCE(sat)@IC/IB=10
VBE(on) @VCE=10V
VBE(sat) @IC/IB=10
Ta=25
℃
[V], VOLTAGE
IC[mA], COLLECTOR CURRENT
10 100 1000 10000 100000
0.0
0.1
0.2
0.3
0.4
0.5
IC=50mA
IC=10mA
IC=1mA
Ta=25
℃
V
CE
[V] COLLECTOR EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Page 3
©2002 Fairchild Semiconductor Corporation
KSP44/45
Rev. A2, November 2002
Typical Characteristics
(Continued)
Figure 7. High Frequency Cu r r e nt Gain Figure 8. Safe Operating Area
0.1 1 10 100 1000
0.1
1
10
100
VCE=10V
f=10MHz
Ta=25
℃
h
FE
, SMALL SIGNAL CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
1
10
100
1000
10000
100000
T
c
=25
℃
100us
1s
Valid for Duty Cycle ≤10%
MSPA44
T
a
=25
℃
1ms
I
C
[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Page 4
0.46
±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
±0.20
]
1.27TYP
[1.27
±0.20
]
3.60
±0.20
14.47
±0.40
1.02
±0.10
(0.25)
4.58
±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
TO-92
Package Dimensions
KSP44/45
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Page 5
©2002 Fairchild Semiconductor Corporation Rev. I1
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reasonably expected to cause the failure of the life support
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Definition of Terms
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This datasheet contains the design specifications for
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any manner without notice.
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