Page 1
VHF Transistor
KSP24
KSP24
1
1. Base 2. Emitter 3. Collector
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
I
EBO
I
C
P
C
T
J
T
STG
(j-a) Thermal Resistance, Junction to Ambient 357 °C/W
R
TH
Collector-Base Voltage 40 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 4.0 V
Collector Current 100 mA
Collector Power Dissipation (Ta=25°C) 350 mW
Derate Above 25°C2.8mW/°C
Junction Temperature 135 °C
Storage Temperature -55~150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
BV
BV
I
CBO
h
f
T
C
G
G
CBO
CEO
EBO
FE
ob
CE
CE
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 4.0 V
Collector Cut-off Current VCB=15V, IE=0 50 nA
DC Current Gain VCE=10V, IC=8mA 30
Current Gain Bandwidth Product VCE=10V, IC=8mA,
Output Capacitance VCB=10V, IE=0, f=1MHz 0.25 0.36 pF
Conversion Gain (213 to 45MHz) VCC=20V, IC=8mA
Conversion Gain (60 to 45MHz) VCC=20V, IC=8mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
400 620 MHz
f=100MHz
19 24 dB
Oscillator Injection=150mV
24 29 dB
Oscillator Injection=150mV
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Page 2
Typical Characteristics
KSP24
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10k
1k
100
VCE = 10V
VCE = 10V
f = 100MHz
10000
1000
100
(sat)[mA], SATURATION VOLTAGE
BE
(sat),V
10
CE
0.1 1 10 100 1000
V
VBE(sat)
VCE(sat)
IC = 10I
B
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
OSCInj = 150mVrms
30
20
[dB], CONVERSION GAIN
10
PC
G
f
= 60MHz,
sig
f
= 104MHz
osc
f
= 213MHz,
sig
f
= 275MHz
osc
10
110100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
0
0 2 4 6 8 10 12 14 16
IC[mA], COLLECTOR CURRENT
Figure 3. Current Gain Bandwidth Product Figure 4. Conversion Gain versus Collector Current
40
IC = 8mA
DC
30
20
[dB], CONVERSION GAIN
10
PC
G
0
0 100 200 300 400
Vi[mV], OSCILLATION INJEC TION
f
= 60MHz,
sig
f
= 104MHz
osc
f
= 213MHz,
sig
f
= 275MHz
osc
50
213MHz
40
30
20
Ω
[ ], INPUT ADMITTANCE
ie
10
y
0
0 2 4 6 8 10 12 14 16 18 20
60MHz
b
ie
IC[mA], COLLECTOR CURRENT
Figure 5. Conversion Gain versus Injection Level Figure 6. Input Admittance
©2001 Fairchild Semiconductor Corporation
g
ie
g
ie
b
ie
Rev. A1, June 2001
Page 3
KSP24
Typical Characteristics
0.10
0.08
0.06
0.04
gre < -0.01[mmho]
0.02
Ω
[ ], REVERSE TRANSFER ADMITTANCE
re
y
0.00
0 2 4 6 8 10 12 14 16 18 20
IC[mA], COLLECTOR CURRENT
Figure 7. Reverse Transfer Admittance Figure 8. Forward Transfer Admittance
1.0
0.8
(Continued)
f = 45MHz
-b
re
f = 45MHz
240
f = 45MHz
200
160
120
80
40
Ω
[ ], FORWARD TRANSFER ADMITTANCE
fe
0
y
0 2 4 6 8 10 12 14 16 18 20
g
fe
b
fe
IC[mA], COLLECTOR CURRENT
0.6
0.4
Ω
[ ], OUTPUT ADMITTA N CE
ce
y
0.2
0.0
02468101214161820
IC[mA], COLLECTOR CURRENT
Figure 9. Output Admitt a nc e
g
oe
b
oe
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Page 4
Package Demensions
4.58
0.46
±0.10
+0.25
–0.15
KSP24
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Page 5
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A
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2
E
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STAR*POWER is used under license
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®
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®
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QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
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STAR*POWER™
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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