
KSK596
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
KSK596
1
1.Source 2. Gate 3. Drain
TO-92S
Si N-channel Junction FET
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
I
I
P
T
T
GDO
G
D
D
J
STG
Gate-Drain Voltage -20 V
Gate Current 10 mA
Drain Current 1 mA
Power Dissipation 100 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
GDO
(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA -0.6 -1.5 V
V
GS
I
DSS
l Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 1.2 ms
lY
FS
C
iss
C
rss
Gate-Drain Breakdown Voltage IG= -100uA -20 V
Drain Current VDS=5V, VGS=0 100 350 µA
Input Capacitance VDS=5V , VGS=0, f=1MHz 3.5 pF
Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
I
Classification
DSS
Classification A B C
(µA) 100 ~ 170 150 ~ 240 210 ~ 350
I
DSS
©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002

Typical Characteristics
KSK596
VGS = -0.1V
VGS = -0.2V
VGS = -0.3V
I
DSS
500
450
400
350
300
250
200
A], DRAIN CURRENT
150
µ
[
D
I
100
50
VGS = 0
0
012345678910
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 1. ID-V
1.6
1.4
1.2
1.0
0.8
0.6
[mA], DRAIN CURRENT
D
I
0.4
0.2
0.0
-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
DS
VGS[V], GATE-SOURCE VOLTAGE
= 200µA
VGS = -0.4V
VDS = 5V
1000
900
800
700
600
VGS = 0
500
400
300
[µA], DRAIN CURRENT
D
I
200
100
VGS = -0.1V
VGS = -0.2V
VGS = -0.3V
0
012345678910
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 2. ID-V
10
1
l [ms], FORWARD TR AN SF ER ADM ITTA NC E
FS
lY
0.1
0.1 1
I
DSS
VGS = -0.4V
VGS = -0.5V
DS
[mA], DRAIN CURRENT
I
DSS
= 500µA
VGS = -0.6V
VDS = 5V
VGS = 0
f=1kHz
Figure 3. ID-V
10
-
-
1
(off)[V], GAT E-SOUR C E CUT-OFF VOL TAGE
GS
0.1
-
V
0.1 1
Figure 5. VGS(off)-I
©2002 Fairchild Semiconductor Corporation
I
[mA], DRAIN CURRENT
DSS
GS
DSS
VDS = 5V
ID = 1µA
Figure 4. yFS-I
100
10
[pF], IN P U T C A P A CITANCE
iss
C
1
110
DSS
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 6. C
ISS-VDS
Rev. B2, November 2002

KSK596
Typical Characteristics
RSS-VDS
[pF], OUTPUT CAPACITANCE
rss
C
10
1
0.1
110
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 7. C
(Continued)
VGS = 0
f = 1MH z
140
120
100
80
60
40
[mW] , POWE R D IS S IPATIO N
C
P
20
0
0 25 50 75 100 125 150
Ta[oC], AMBIENT TEMPERATURE
Figure 8. PD-T
A
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002

Package Dimensions
4.00
(1.10)
0.66 MAX.
±0.20
TO-92S
±0.20
3.70
±0.30
2.31
KSK596
±0.20
14.47
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
3.72
2.86
±0.20
1.27TYP
±0.20
±0.10
0.77
0.35
+0.10
–0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002

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As used herein:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.