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KSP2222A
KSP2222A — NPN General-Purpose Amplifier
November 2014
NPN
General-Purpose Amplifier
Features
• Collector-Emitter Voltage: V
• Available as PN2222A
CEO
= 40 V
1 2 3
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number Marking Package Packing Method
KSP2222ABU KSP2222 TO-92 3L Bulk
KSP2222ATA KSP2222 TO-92 3L Ammo
KSP2222ATF KSP2222 TO-92 3L Tape and Reel
TO-92
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating co nd iti ons an d s tres si ng the parts to these levels is not recomme nde d. In add ition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
T
T
STG
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSP2222A Rev. 1.1.0
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6.0 V
Collector Current 600 mA
Junction Temperature 150 °C
J
Storage Temperature -55 to +150 °C
= 25°C unless otherwise noted.
A
Page 2
KSP2222A — NPN General-Purpose Amplifier
Thermal Characteristics
(1)
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
P
R
θJC
R
θJA
Power Dissipation by R
D
Derate Above 25°C5mW/°C
Thermal Resistance, Junction-to-Case 83.3 °C/W
Thermal Resistance, Junction-to-Ambient 200 °C/W
θJA
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
625 mW
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
BV
BV
BV
I
CBO
I
EBO
h
V
CE
V
BE
C
t
ON
t
OFF
NF Noise Figure
Note:
2. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2%
Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V
CBO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 40 V
CEO
Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
EBO
Collector Cut-Off Current VCB = 60 V, IE = 0 0.01 μA
Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA
= 10 V, IC = 0.1 mA 35
V
CE
= 10 V, IC = 1 mA 50
V
CE
DC Current Gain
FE
(sat) Collector-Emitter Saturation Voltage
(sat) Base-Emitter Saturation Voltage
f
Current Gain Bandwidth Product
T
Output Capacitance
ob
(2)
Turn-On Time
Turn-Off Time
(2)
= 10 V, IC = 10 mA 75
V
CE
= 10 V, IC = 150 mA
V
CE
= 10 V, IC = 500 mA
V
CE
(2)
(2)
100 300
40
IC = 150 mA, IB = 15 mA 0.3
I
= 500 mA, IB = 50 mA 1.0
C
IC = 150 mA, IB = 15 mA 0.6 1.2
I
= 500 mA, IB = 50 mA 2.0
C
= 20 mA, V
I
C
f = 100 MHz
= 10 V, IE = 0,
V
CB
CE
= 20 V,
300 MHz
f = 1.0 MHz
= 30 V, IC = 150 mA,
V
CC
I
= 15 mA, V
B1
= 30 V, IC = 150 mA,
V
CC
= I
I
I
R
B1
C
= 15 mA
B2
= 100 μA, VCE = 10 V,
= 1 kΩ, f = 1.0 kHz
S
BE(off)
= 0.5 V
8pF
35 ns
285 ns
4dB
V
V
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSP2222A Rev. 1.1.0 2
Page 3
Physical Dimensions
D
KSP2222A — NPN General-Purpose Amplifier
Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSP2222A Rev. 1.1.0 3
Page 4
Physical Dimensions (Continued)
KSP2222A — NPN General-Purpose Amplifier
Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSP2222A Rev. 1.1.0 4
Page 5
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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