Datasheet KSP10 Datasheet (Fairchild Semiconductor)

VHF/UHF transistor

KSP10

KSP10

1

TO-92

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V
V
V
P

CBO
CEO
EBO
C

Collector-Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3.0 V
Collector Power Dissipation (Ta=25°C) 350 mW
Derate above 25°C2.8mW/°C

P

T
T

C

J
STG

Collector Power Dissipation (T
Derate above 25°C8.0W/°C
Junction Temperature 150 °C

Storage Temperature -55~150 °C
Rth(j-c) Thermal Resistance, Junction to Case 125 °C/W
Rth(j-a) Thermal Resistance, Junction to Ambient 357 °C/W

Electrical Characteristics

Symbol Parameter Test Condition Min. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

(sat) Collector-Emitter Saturation Voltage IC=4mA, IB=0.4mA 0.5 V

V

CE

(on) Base-Emitter On Voltage VCE=10V, IC=4mA 0.95 V

V

BE

f

T

C

ob

C

rb

C

c·rbb´

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Collector-Base Breakdown Voltage IC=100µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 V

Emitter-Base Breakdown Voltage IE=10µA, IC=0 3.0 V

Collector Cut-off Current VCB=25V, IE=0 100 nA
Emitter Cut-off Current VEB=2V, IC=0 100 nA
DC Current Gain VCE=10V, IC=4mA 60

Current Gain Bandwidth Product VCE=10V, IC=4mA, f=100MHz 650 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 0.7 p F
Collector Base Feedback Capacitance VCB=10V, IE=0, f=1MHz 0.35 0.65 pF
Collector Base Time Constant VCB=10V, IC=4mA,

Ta=25°C unless otherwise noted

=25°C) 1.0 W

C

Ta=25°C unless otherwise noted

f=31.8MHz

9.0 ps

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

Typical Characteristics

KSP10

1000

100

10

, DC CURRENT GAIN

FE

h

1

1 10 100 1000

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

10000

1000

100

10

1 10 100

[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

T

f

IC[mA], COLLECTOR CURRENT

VCE = 10V

VCE = 10V
f=100MHz

VCE(sat)

VBE(sat)

IC = 10 I

B

10000

1000

100

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

10

0.1 1 10 100 1000

IC[mA], COLLECTOR CURRENT

Collector-Emitter Saturation Voltage

140

120

100

80

60

Ω

40

[ ], INPU T A DMIT T ANCE

ib

y

20

100 1000

-b

ib

g

ib

f[MHz] , F REQUENCY

Figure 3. Current Gain Bandwidth Product Figure 4. Rectangular Form

gib[ ]

400

Ω

200

0

-10

-20

1000MHz

-30

-40

Ω

[ ], OUTPUT ADMITTANCE

ob

y

-50

-60
0 102030405060708090

700

100

100

90
80
70
60
50
40
30
20
10

0

-10

Ω

[ ], FORWARD TRANSFE R AD M ITTA NC E

-20

fb

y

-30
100 1000

b

fb

-g

fb

f[MHz], FREQUENCY

Figure 5. Polar Form Figure 6. Rect an gular Form

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

KSP10

Typical Characteristics

400

gfb[ ]

gfb[ ]

Ω

100
200

400

700

1000MHz

Ω

600

90

80

70

60

Ω

[ ],

fb

jb

200

50

100

40

30

20

10

70 60 50 40 30 20 10 0 -10 -20 -30

Figure 7. Polar Form Figure 8. Rect an gular Form

3

2

1

0

Ω

-1

[ ],

rb

jb

-2

-3

-4

-5

-2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6 2.0

(Continued)

700

1000MHz

6

5

4

Ω

[ ],

3

fb

y

2

1

REVERSE TRANSFER ADMITTANCE

0

100 1000

-b

rb

f[MHz], FREQUENCY

10

9

8

7

6

5

4

3

Ω

[ ], OUTPUT ADMITTANCE

2

ob

y

1

0

100 1000

b

ob

g

ob

f[MHz], FREQUENCY

Figure 9. Polar Form Figure 10. Rectangular Form

16

14

12

10

Ω

8

[ ],

ob

jb

6

4

2

0

400

200

100

02468

Figure 11. Polar Form

©2002 Fairchild Semiconductor Corporation

1000MHz

700

gob[ ]

Ω

Rev. A2, September 2002

Package Dimensions

0.46

±0.10

4.58

+0.25
–0.15

KSP10

TO-92

±0.20

4.58

±0.40

1.27TYP

[1.27

±0.20

3.86MAX

±0.10

1.02

+0.10

–0.05

0.38

14.47

1.27TYP

]

3.60

±0.20

[1.27

±0.20

]

0.38

+0.10
–0.05

(0.25)

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™

2

CMOS™

E
EnSigna™

FACT™
FACT Quiet series™

®

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™

2

C™

I
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™

ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC

®

OPTOPLANAR™

PACMAN™
POP™
Power247™
PowerTrench

®

QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™

SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET

®

VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Producti on This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2002 Fairchild Semiconductor Corporation Rev. I1

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.