Page 1
©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002
KSH44H11
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 80 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 8 A
I
CP
Collector-Current (Pulse) 16 A
PC
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
a
=25°C) 1.75 W
T
J
Junction Temperature 150 °C
T
STG
Storage T emperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 80 V
I
CEO
Collector Cut-off Current V
CE
= 80V, IB = 0 10 µA
I
EBO
Emitter Cut-off Cu rre n t V
BE
= 5V, IC = 0 50 µA
hFE
DC Current Gain V
CE
= 1V, IC = 2A
V
CE
= 1V, IC = 4A
60
40
V
CE
(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A 1 V
V
BE
(on) Base-Emitter On Voltage IC = 8A, IB = 0.8A 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, IC = 0.5A 50 MHz
Cob
Output Capacitance V
CB
=10V, f = 1MHz 130 pF
tON
Turn On Time IC = 5A
I
B1
= - IB2 = 0.5A
300 ns
tSTG
Storage Time 500 ns
tF
Fall Time 140 ns
KSH44H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular KSE44H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
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©2002 Fairchild Semiconductor Corporation
KSH44H11
Rev. A3, October 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 1V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
5ms
100
µ
s
500
µ
s
1ms
DC
ICP(max)
IC(max)
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
P
C
[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Page 3
Package Dimensions
KSH44H11
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91
±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
Page 4
©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002
KSH44H11
Package Dimensions
(Continued)
Dimensions in Millimeters
6.60
±0.20
0.76
±0.10
MAX0.96
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.60
±0.20
0.80
±0.10
1.80
±0.20
9.30
±0.30
16.10
±0.30
6.10
±0.20
0.70
±0.20
5.34
±0.20
0.50
±0.10
0.50
±0.10
2.30
±0.20
(0.50) (0.50)(4.34)
I-PAK
Page 5
©2002 Fairchild Semiconductor Corporation Rev. I1
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This datasheet contains the design specifications for
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