Page 1
KSH30/30C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP30 and TIP30C
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH30/30C
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
V
V
I
I
I
PC
CBO
CEO
EBO
C
CP
B
Collector-Base Voltage
: KSH30
: KSH30C
- 40
- 100
Collector-Emitter Voltage
: KSH30
: KSH30C
- 40
- 100
Emitter-Base Voltage - 5 V
Collector Current (DC) - 1 A
Collector Current (Pulse) - 3 A
Base Current - 0.4 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (Ta=25°C) 1.56 W
T
J
T
STG
Electrical Characteristics
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
(sus) Collector-Emitter Sustaining Voltage
V
CEO
: KSH30
: KSH30C
I
CEO
Collector Cut-off Current
: KSH30
: KSH30C
I
CES
Collector Cut-off Current
: KSH30
: KSH30C
I
EBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = - 1A, IB = - 125mA - 0.7 V
CE
(on) * Base-Emitter On Voltage V
V
BE
f
T
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= - 30mA, IB = 0 - 40
I
C
V
= - 40V , IB = 0
CE
= - 60V , IB = 0
V
CE
= - 40V, V
V
CE
V
= 100V, V
CE
= - 5V, IC = 0 - 1 mA
BE
= - 4V, IC = - 0.2A
CE
= - 4V, IC = - 1A
V
CE
= - 4A, IC = - 1A - 1.3 V
CE
= - 10V , IC = - 200mA 3 MHz
CE
BE
BE
= 0
= 0
- 100
- 50
- 50µAµA
- 20
- 20µAµA
40
15 75
V
V
V
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
Page 2
Typical Characteristics
KSH30/30C
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Turn On Time
t
STG
tF, VCC= - 30V
tF, VCC= - 10V
10
1
s],TURN OFF TIME
0.1
µ
[
STG
, t
F
t
0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VCE = 2V
IC=10I
10
1
s],TURN ON T IME
µ
0.1
[
D
, t
R
t
0.01
-0.01 -0.1 -1 -10
tR, VCC= - 30V
tR, VCC= - 10V
tD , VBE(off)=2V
IC=10I
B
IC[A], COLLECTOR CURRENT
B
-100
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100 -1000
100
µ
s
500
µ
s
1ms
DC
KSH30
KSH30C
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Turn Off Time Figure 4. Safe Operating Area
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
Page 3
Package Dimensions
6.60 ±0.20
5.34 ±0.30
D-PAK
(4.34)(0.50) (0.50)
0.70 ±0.20
KSH30/30C
2.30 ±0.10
0.50 ±0.10
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
2.70 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
9.50 ±0.30
6.10 ±0.20
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
±0.10
0.91
0.89 ±0.10
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.70)
0.76 ±0.10
MIN0.55
(1.00)
(0.90)
(0.10) (3.05)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
Page 4
KSH30/30C
Package Dimensions
6.60
5.34
(0.50) (0.50)(4.34)
±0.20
0.60
±0.10
0.80
MAX0.96
0.76
±0.10
(Continued)
±0.20
±0.20
I-PAK
±0.20
±0.20
0.70
6.10
±0.20
±0.30
1.80
9.30
2.30
0.50
±0.20
±0.10
±0.30
16.10
0.50
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
Page 5
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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ActiveArray™
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EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
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HiSeC™
2
C™
I
Across the board. Around the world.™
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OCXPro™
OPTOLOGIC
®
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®
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QT Optoelectronics™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This dat asheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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