Page 1
KSH112
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP112
NPN Silico n Darlingt on Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH112
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
Collector Current (Pulse) 4 A
Base Current 50 mA
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
B
R
110
R
20.6
R1
R2
Ω≅
k
Ω≅
k
Symbol Parameter Tes t C ondition Min. Max. Units
(sus) Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
V
CEO
I
CEO
I
CBO
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA
CE
(sat) * Base-Emitter Saturation Voltage IC = 4A, IB = 40mA 4 V
V
BE
(on) * Base-Emitter On Voltage V
V
BE
f
T
Output Capacitance V
Cob
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= 50V, IB = 0 20 µA
CE
= 100V, IB = 0 20 µA
CB
= 5V, IC = 0 2 mA
EB
= 3V, IC = 0.5A
CE
V
= 3V, IC = 2A
CE
= 3V, IC = 4A
V
CE
= 4A, IB = 40mA
I
C
= 3A, IC = 2A 2.8 V
CE
= 10V, IC = 0.75A 25 MHz
CE
= 10V, IE = 0
CB
500
1000
200
12K
100 pF
2
3
f = 0.1MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
C
E
V
V
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Page 2
Typical Characteristics
KSH112
10000
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
VCE = 3V
VBE(sat)
VCE(sat)
IC = 250 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
s), TURN ON TIME
µ
(
D
,t
R
t
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CUR RE NT
VCC=30V
=250I
I
C
B
t
R
t
D
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
10
1
S], TURN OFF T IME
µ
[
F
,t
STG
t
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
10
VCC=30V
=250I
I
C
B
t
STG
t
F
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
100
µ
s
1ms
5ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A4, October 2002
Page 3
KSH112
Typical Characteristics
25
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
(Continued)
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Page 4
Package Dimensions
6.60 ±0.20
5.34 ±0.30
D-PAK
(4.34)(0.50) (0.50)
0.70 ±0.20
KSH112
2.30 ±0.10
0.50 ±0.10
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
2.70 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
9.50 ±0.30
6.10 ±0.20
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
±0.10
0.91
0.89 ±0.10
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.70)
0.76 ±0.10
MIN0.55
(1.00)
(0.90)
(0.10) (3.05)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Page 5
KSH112
Package Dimensions
6.60
5.34
(0.50) (0.50)(4.34)
±0.20
0.60
±0.10
0.80
MAX0.96
0.76
±0.10
(Continued)
±0.20
±0.20
I-PAK
±0.20
±0.20
0.70
6.10
±0.20
±0.30
1.80
9.30
2.30
0.50
±0.20
±0.10
±0.30
16.10
0.50
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Page 6
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®
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C™
I
Across the board. Around the world.™
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®
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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