Page 1
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
• Complement to KSE200
KSE210
=65MHz@IC= -100mA (Min.)
T
KSE210
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
PC
TJ
T
STG
Collector-Base Voltage - 40 V
Collector-Emitter Voltage - 25 V
Emitter-Base Voltage - 8 V
Collector Current - 5 A
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
IEBO
hFE1
h
FE2
h
FE3
V
(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA
CE
(sat) Base-Emitter Saturation Voltage IC = - 5A, IB = - 1A -2.5 V
V
BE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 -25 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= -40V, IE = 0
CB
= - 40V, IE =0 @ TJ = 125°C
V
CB
= - 8V, IC = 0 -100 nA
BE
= - 1V, IC = - 500mA
CE
V
= - 1V, IC = - 2A
CE
= - 2V, IC = - 5A
V
CE
= - 2A, IC = - 200mA
I
C
I
= - 5A, IB = - 1A
C
= - 1V, IC = - 2A -1.6 V
CE
= - 10V, IC = - 100mA 65 MHz
CE
= - 10V, IE = 0, f = 1MHz 120 pF
CB
-100
-100nAµA
70
4510180
-0.3
-0.75
-1.8
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Page 2
Typical Characteristics
KSE210
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
VCE = -2V
VCE = -1V
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
-1000
-100
-10
[pF], CAPACITANCE
ob
C
-1
-0.1 -1 -10 -100
VCB[V], COLLECTOR BASE VOLTAGE
f=0.1MHZ
IE=0
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
-100
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
µ
s
500
1ms
µ
s
5ms
DC
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
24
21
18
15
12
9
6
[W], POWER DISSIPATION
C
P
3
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
Page 3
Package Demensions
KSE210
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Page 4
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intended to be an exhaustive list of all such trademarks.
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Bottomless™
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DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN
™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
®
®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H2
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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