Page 1
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
1
2
3
7
8
16
15
10
9
0.26
20.32
19.32
4.0
3.0
0.5
7.62
13°
Max
7.0
6.0
6 11
2.54
1.2
0.5
3.0
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
1
2
4
3
0.26
13°
Max
2.54
10.16
0.26
7.62
ISP817X3,2,1
ISP817-3,2,1
ISP827X3,2,1
ISP827-3,2,1
3.0
10.16
9.16
4.0
3.0
3.35
0.5
7.0
6.0
7.62
2
3
4
7
6
5
1.2
13°
Max
0.5
0.26
2.54
ISP847X3,2,1
ISP847-3,2,1
Dimensions in mm
LOW INPUT CURRENT
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
l Certified to EN60950 by the following
Test Bodies :Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP817-3,-2,-1, ISP827-3,-2,-1, ISP8473,-2,-1 series of optically coupled isolators
consist of infrared light emitting diodes and
NPN silicon photo transistors in space efficient
dual in line plastic packages.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l Low input current 0.5mA I
F
l High Current Transfer Ratio (50% min)
l High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l High BV
CEO
(70V min)
l All electrical parameters 100% tested
l Custom electrical selections available
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
5 12
3.35
5.08
4.08
1 8
14
4
13
ISP817X,ISP827X,ISP847X3,2,1
ISP817,ISP827,ISP847-3,-2,-1
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
DB92239m-AAS/A4
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DB92239m-AAS/A4
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = 20mA
Reverse Voltage (VR) 10 V IR = 10µA
Reverse Current (IR) 10 µA VR = 10V
Output Collector-emitter Breakdown (BV
CEO
) 70 V IC = 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
) 6 V IE = 100µA
Collector-emitter Dark Current (I
CEO
) 100 nA VCE = 20V
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP817-3, ISP827-3, ISP847-3 70 % 0.5mA IF , 0.4V V
CE
100 % 1.0mA IF , 0.4V V
CE
ISP817-2, ISP827-2, ISP847-2 50 % 0.5mA IF , 0.4V V
CE
ISP817-1, ISP827-1, ISP847-1 50 % 1.0mA IF , 0.4V V
CE
Collector-emitter Saturation Voltage -3 0.4 V 0.5mA I
F
, 0.35mA I
C
-2 0.4 V 0.5mA I
F
, 0.25mA I
C
-1 0.4 V 1.0mA IF , 0.5mA I
C
Input to Output Isolation Voltage V
ISO
5300 V
RMS
See note 1
7500 V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
Ω V
IO
= 500V (note 1)
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 0.2mA,RL= 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
7/12/00
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 10V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
70V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
Page 3
DB92239m-AAS/A4
7/12/00
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Collector-emitter saturation voltage V
CE(SAT)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
TA = 25°C
0
0.8
1.2
1.6
2.0
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
Forward current I
F
(mA)
Collector Current vs. Low
Collector-emitter Voltage
0 0.2 0.4 0.6 0.8 1.0
Collector current I
C
(mA)
Relative current transfer ratio
Current Transfer Ratio vs. Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
0
40
60
80
100
0
0.5
1.0
IF = 0.5mA
IF = 1mA
0.4
0.1 0.2 0.5 1 2 5
120
20
IF = 1mA
IC = 0.5mA
1.5
IF = 1mA
VCE = 0.4V
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
VCE = 0.4V
TA = 25 °C
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