Datasheet ISP 452 Datasheet

ISP 452

Smart Power High-Side-Switch
for Industrial Applications

Features

• Short-circuit protection

• Input protection

• Overtemperature protection with hysteresis

• Overload protection

• Overvoltage protection

• Switching inductive load

• Clamp of negative output voltage with inductive loads

• Undervoltage shutdown

• Maximum current internally limited

• Electrostatic discharge (ESD) protection

• Reverse battery protection

Package: PG-SOT 223

Type

ISP 452

1

)

Ordering code

SP000219823

Application

• µC compatible power switch for 12 V DC grounded loads for industrial applications

• All types of resistive, inductive and capacitive loads

• Replaces electromechanical relays and discrete circuits

4

3

2

1

General Description

• N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS® technology.

• Providing embedded protection functions.

1

)

With resistor R

limited by connected load.

=150 Ω in GND connection, resistor in series with IN connections, reverse load current

GND

Page 1 of 10 2006-03-01

ISP 452

Block diagram

+ V

bb

4

OUT

1

Load

IN3

ESD­Diode

R

Voltage

source

V

Logic

Voltage

sensor

in

ESD

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Temperature

sensor

GND

MINI-PROFET

2

Signal GND

Load GND

Pin Symbol Function

1 OUT O Protected high-side power output
2 GND - Logic ground
3 IN I Input, activates the power switch in case of logical high signal
4 Vbb + Positive power supply voltage

Page 2 2006-03-01

ISP 452

Maximum Ratings

at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage Vbb 40 V
Load current self-limited IL I

2

Maximum input voltage

)

VIN -5.0...V

L(SC)

bb

A

V
Maximum input current IIN ±5 mA
Inductive load switch-off energy dissipation,
single pulse I

L = 0.5A, Tj, start = 150°C

0.5 J

E

AS

(not tested, specified by design)

3

Load dump protection

R

=2 Ω , td=400ms, IN= low or high, U

I

)

V

LoadDump

= U

+ Vs

A

= 13.5 V

A

V

Load dump

4

)

V

(not tested, specified by design)

R

= 24 Ω

L

R

= 80 Ω

L

Electrostatic discharge capability (ESD)

5

)

PIN 3

V

±1

ESD

PIN 1,2,4
Junction Temperature

Operating temperature range
Storage temperature range
Max. power dissipation (DC)

6

)

T

A = 25 °C

P

Tj
T

a

T

stg

1.8 W

tot

-30 ...+85

-40 ...+105

60
80

±2

150

kV

°C

Thermal resistance chip - soldering point:
chip - ambient:

2

)

At VIN > Vbb, the input current is not allowed to exceed ±5 mA.

3

)

Supply voltages higher than V

A resistor for the protection of the input is integrated.

4

)

V

Load dump

5

)

HBM according to MIL-STD 883D, Methode 3015.7

6

)

Device on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection.

bb(AZ)

6)

R
R

thJS
thJA

770K/W

Page 3 2006-03-01

ISP 452
Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 13.5V unless otherwise specified

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1)
I

= 0.5 A, Vin = high Tj = 25°C

L

T

7

OUT

)

= 0.5 V

Nominal load current (pin 4 to 1)
ISO Standard: V
T

= 85 °C

S

ON = V

bb

- V

= 150°C

j

Turn-on time to 90% V
Turn-off time to 10% V

R

= 24 Ω

L

Slew rate on
10 to 30% V

OUT

, R

= 24 Ω

L

Slew rate off

70 to 40% V

, RL = 24 Ω

OUT

Input
Allowable input voltage range, (pin 3 to 2) V
Input turn-on threshold voltage

T

= -40...+150°C

j

Input turn-off threshold voltage

T

= -40...+150°C

j

Input thresho ld hysteresis ∆V
Off state input current (pin 3) VIN(off) = 1.2 V

T

= -40...+150°C

j

On state input current (pin 3) VIN(on) = 3.0 V to V

T

= -40...+150°C

j

Input resistance RIN 1.5 2.8 3.5 kΩ

OUT
OUT

bb

R

ON

min typ max

--

--

0.7 -- -- A

I

L(ISO)

t

on

t

off

dV /dt

-dV/dt

IN

V

IN(T+)

V

IN(T-)

I

IN(off)

I

IN(on)

-- 2 4 V/µs

on

-- 2 4 V/µs

off

-3.0 -- V

-- -- 3.5 V

1.5 -- -- V

-- 0.5 -- V

IN(T)

10 -- 60 µA

10 -- 100 µA

--

--

0.16

--

60
60

0.2

Ω

0.4

100

µs

150

bb

V

7

)

I

is limited by current limitation, see I

L(ISO)

L(SC)

Page 4 2006-03-01

ISP 452

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 13.5V unless otherwise specified

Operating Parameters

8

Operating voltage

)

Tj =-40...+150°C V
Undervoltage shutdown Tj =-40...+150°C V
Undervoltage restart Tj =-40...+25°C

T

=+150°C

j

Undervoltage restart of charge pumpe
see diagram page 9

Undervoltage hysteresis

∆V

bb(under)

= V

bb(u rst)

- V

bb(under)

Overvoltage shutdown Tj =-40...+150°C V
Overvoltage restart Tj =-40...+150°C V
Overvoltage hysteresis Tj =-40...+150°C ∆V
Standby current (pin 4), Vin = low Tj =-40...+150°C I
Operating current (pin 2), Vin = 5 V I
Leakage current (pin 1) Vin = low Tj =-40...+25°C
T

=150°C

j

min typ max

5.0 -- 34 V

bb(on)
bb(under)

V

bb(u rst)

3.5 -- 5 V

-- -- 6.5

7.0

V
∆V

I

-- 5.6 7 V

bb(ucp)

bb(under)

34 -- 42 V

bb(over)

33 -- -- V

bb(o rst)

-- 0.7 -- V

bb(over)

-- 10 25 µA

bb(off)

-- 1 1.6 mA

GND

-- 2 5

L(off)

-- 0.3 -- V

µA

7

V

8

)

At supply voltage increase up to V

= 5.6 V typ without charge pump, V

bb

≈Vbb - 2 V

OUT

Page 5 2006-03-01

ISP 452

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 13.5V unless otherwise specified

Protection Functions

Current limit (pin 4 to 1) T
V

= 20V T

bb

= -40...+150°C

j

= 25°C

j

Overvoltage protection Ibb=4mA Tj =-40...+150°C V
Output clamp (ind. load switch off)
at V

OUT=Vbb-VON(CL)

,

I

bb

= 4mA
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis

9

Inductive load switch-off energy dissipation

T

= 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V

j, start

)

(not tested, specified by design)

10

Reverse battery (pin 4 to 2)

)

(not tested, specified by design)

I

L(SC)

41 -- -- V

bb(AZ)

V

∆

E

-V

41 47 -- V

ON(CL)

Tjt -- 10 -- K

-- -- 0.5 J

AS

-- -- 30 V

bb

min typ max

0.7

0.7

1.5

--

2

2.4

A

- V

bb

= ∫ V

AS

)

* iL(t) dt, approx.

ON(CL)

9

)

While demagnetizing load inductance, dissipated energy in PROFET is E

EAS= 1/2 * L * I

10

)

Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) has to be limited by the connected

load.

2

V

ON(CL)

* (

L

V

ON(CL)

Page 6 2006-03-01

ISP 452

Max. allowable power dissipation
P

= f (TA,TSP)

tot

P

[W]

tot

18

Current limit characteristic
I

= f (Von); (Von see terms schematic below)

L(SC)

I

[A]

L(SC)

2

16

14

12

T

SP

10

8

6

4

T

2

0

0 25 50 75 100 125 150

A

On state resistance (Vbb-pin to OUT-pin)
RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A

RON [Ω]

0.4

0.35

0.3

0.25

98%

TA, TSP[°C]

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

02468101214

150°C

25°C

-40°C

Typ. input current
IIN = f (VIN); Vbb = 13.5 V

IIN [µA]

50

45

40

35

30

-40°C

+25°C

+150°C

Von [V]

0.2

0.15

0.1

0.05

0

-50 -25 0 25 50 75 100 125 150

Tj [°C]

25

20

15

10

5

0

02468101214

VIN [V]

Page 7 2006-03-01

ISP 452

Typ. operating current
I

= f (Tj); Vbb = 13.5 V; VIN = high

GND

I

[mA]

GND

0.8

Typ. overload current
I

= f (t); Vbb = 13.5 V, no heatsink, Param.: T

L(lim)

I

[A]

L(lim)

1.4

jstart

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

-50 -25 0 25 50 75 100 125 150

Typ. standby current
I

I

= f (Tj); Vbb = 13.5 V; VIN = low

bb(off)

[µA]

bb(off)

8

1.2

1

0.8

0.6

0.4

0.2

0

-50 0 50 100 150 200 250 300 350 400

Tj [°C]

Short circuit current
I

L(SC)

I

L(SC)

1.4

+150°C

= f (Tj); Vbb = 13.5 V

[A]

+25°C

-40°C

t [ms]

7

6

5

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150

Tj [°C]

1.2

1

0.8

0.6

0.4

0.2

0

-50 -25 0 25 50 75 100 125 150

Tj [°C]

Page 8 2006-03-01

ISP 452

Typ. input turn on voltage thres ho ld
V

V

IN(T+)

IN(T+)

3

2.5

2

= f (Tj);
[V]

13V

Figure 6: Undervoltage restart of charge pumpe

V

[V]

ON

1.5

1

0.5

0

-50 -25 0 25 50 75 100 125 150

Typ. on-state resistance (Vbb-Pin to Out-Pin)
RON = f (Vbb,IL); IL=0.5A, Tj = 25°C

RON [mΩ]

300

250

Tj [°C]

V

bb(over)

V

bb(o rst)

V

bb(under)

V

bb(u rst)

V

bb(u cp)

V
charge pump starts at V

, about 5.6 V typ.

bb(ucp)

Terms

bb

[V]

200

150

100

50

0

0 5 10 15 20 25

Vbb [V]

Page 9 2006-03-01

ISP 452

Package:

all dimensions in mm.
PG-SOT 223:

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2001
All Rights Reserved.

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The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.
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(see address list).

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types in question please contact your nearest Infineon Technologies Office.

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Page 10 2006-03-01