
Transistors
Dual digital transistors
IMH23
zFeatures
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
V
CE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
I
C=600mA.
3) Two DTC643T chips in a SMT package.
zStructure
NPN digital transistor
(Built-in resistor type)
zEquivalent circuit
(4) (5) (6)
zExternal dimensions (Unit : mm)
SMT6
)
)
6
(
1
(
0.3
)
5
(
)
4
(
1.6
2.8
0.15
0.3Min.
Abbreviated symbol : H23
0.95
)
2
(
0.95
)
3
(
1pin mark
0.8
Each lead has same dimensions
IMH23
2.9
1.9
1.1
R
1
1
R
(3) (2) (1)
R1=4.7kΩ
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ 200mW per element must not be a exceeded.
V
CBO
V
CEO
V
EBO
I
C
C
Tj 150
Tstg
Limits
20
20
12
600
300(TOTAL)P
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
∗
1/2

Transistor
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BV
BV
BV
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
V
DC current transfer ratio
Input resistance
Transition frequency
Output "ON" resistance
∗
Transition frequency of the device.
zPackaging specifications and h
Package
Type
IMH23
Packaging type
Code
Basic ordering unit (pieces)
FE
SMT6
Taping
T110
3000
zElectrical characteristic curves
10000
Ta=100°C
Ta=25°C
FE
Ta= −40°C
1000
DC CURRENT GAIN : h
100
0.1 1 10 100 1000
COLLECTOR CURRENT : I
Fig.1 DC Current Gain vs.
Collector Current
VCE=5V
(mA)
C
zR
on measurement circuit
v
0
R
on
RL=1kΩ
= ×R
vi−v
0
20
CBO
CEO
EBO
I
CBO
I
EBO
CE (sat)
h
FE
R
1
f
T
R
on
−
20
−
12
−
−−
−−
40
−
820
−
3.29 4.7
150
−
0.55
−
− V
− V
− V
0.5 µA
0.5 µA
150 mV
2700 −
6.11 kΩ
− MHz
− Ω
10000
1000
(mV)
CE (sat)
100
Ta=100°C
Ta=25°C
Ta= −40°C
10
COLLECTOR SATURATION
VOLTAGE : V
1
0.1 1 10 100 1000
COLLECTOR CURRENT : I
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
L
=50µA
I
C
I
=1mA
C
I
=50µA
E
V
=20V
CB
=12V
V
EB
/ IB=50mA / 2.5mA
I
C
=5V, IC=50mA
V
CE
−
=10V, IE= −50mA, f=100MHz
V
CE
VI=5V, R
IC / IB=20
C
(mA)
=1kΩ, f=1KHz
L
1000
100
(Ω)
on
10
1
ON RESISTANCE : R
0.1
0.1 1 10 100
Fig.3 "ON" resistance vs. Input Voltage
∗
Ta=25°C
f=1kHz
R
hFE=1500 (5V / 50mA)
INPUT VOLTAGE : V
IMH23
=1kΩ
L
(V)
I
Input
v
i
100mV
(rms)
f=1kHz
v
I
V
Output
v
0
Fig.4 Output "ON" resistance (Ron)
measurement circuit
2/2

Appendix
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The contents described herein are subject to change without notice. The specifications for the
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
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About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
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Appendix1-Rev1.1