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HI-SINCERITY
MICROELECTRONICS CORP.
HSD965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD965 is suited for use as AF output amplifier and flash unit.
Spec. No. : HE6537
Issued Date : 1992.11.25
Revised Date : 2002.02.22
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 7 V
IC Collector Current (Continuous)......................................................................................... 5 A
IC Collector Current (Peak PT=10mS) .................................................................................. 8 A
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCEO 20 - - V IC=1mA, IB=0
BVEBO 7 - - V IE=10uA, IC=0
ICBO - - 0.1 uA VCB=10V, IE=0
IEBO - - 0.1 uA VEB=7V, IC=0
*VCE(sat) - 0.35 1 V IC=3A, IB=100mA
*hFE1 230 - 800 VCE=2V, IC=0.5A
*hFE2 150 - - VCE=2V, IC=2A
fT - 150 - MHz VCE=6V, IE=50mA
Cob - - 50 pF VCB=20V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank Q R S
Range 230-380 340-600 560-800
HSD965 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6537
Issued Date : 1992.11.25
Revised Date : 2002.02.22
Page No. : 2/3
10000
1000
HFE
100
10
125oC
25oC
75oC
hFE @ VCE=2V
10 100 1000 10000
Collector Current-IC (mA)
Capacita nce & Rev erse-Biased Voltage
100
Cob
Current Gain & Collector Current
1000
Sat urati on Voltage & Col lector Current
CE(sat)
V
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
1000
100
125oC
Cutoff Frequency & Coll ector Current
B
@ IC=30I
75oC
Collector Current-IC (mA)
VCE=6V
25oC
10
Capacitance (pF)
1
0.1 1 10 100
Reverse-Biased Vol tage (V)
Safe Oper ating Area
10000
1000
(mA)
C
100
10
Collector Current-I
PT=1ms
PT=100ms
PT=1s
10
Cutoff Fr equen cy ( M Hz)...
1
1 10 100 1000
Collector Current-IC (mA)
Power Derating
800
700
600
500
400
300
200
Power Dis s ip ation- PD (mW)
100
1
1 10 100
Forwar d Biased Voltage-VCE (V)
0
0 50 100 150 200
Ambient Temper a t ure-Ta (oC)
HSD965 HSMC Product Specification
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HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6537
Issued Date : 1992.11.25
Revised Date : 2002.02.22
Page No. : 3/3
A
α2
B
31
2
Marking:
HD
S
695
Date Code Control Code
Rank
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Collector 3.Base
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
*: Typical
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
α1
α2
α3
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD965 HSMC Product Specification
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