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HI-SINCERITY
MICROELECTRONICS CORP.
HSD880
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD880 is designed for low frequency power amplifier
applications.
Features
High DC Current Gain
•
High Power Dissipation: PC=30W at TC=25°C
•
Spec. No. : HE6729-B
Issued Date : 1992.11.25
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 30 W
Total Power Dissipation (Ta=25°C)................................................................................... 1.5 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage...................................................................................... 60 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 7 V
IC Collector Current.............................................................................................................. 3 A
IB Base Current................................................................................................................. 0.5 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 60 - - V IC=1mA, IE=0
BVCEO 60 - - V IC=50mA, IB=0
ICBO - - 100 uA VCB=60V, IE=0
IEBO - - 100 uA VEB=7V, IC=0
*VCE(sat) - - 1 V IC=3A, IB=0.3A
*VBE(on) - - 1 V IC=0.5A, VCE=5V
*hFE 60 - 300 IC=0.5A, VCE=5V
fT - 3 - MHz IC=500mA, VCE=5V
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank O Y GR
Range 60-120 100-200 150-300
HSMC Product Specification
Page 2
HI-SINCERITY
g
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6729-B
Issued Date : 1992.11.25
Revised Date : 1999.08.01
Page No. : 2/3
1000
100
hFE
10
1
1 10 100 1000 10000
hFE @ VCE=5V
Collector Curren t ( mA)
On Vol t age & Coll ect or Current
10000
Current Gain & Collector Curren t
10000
1000
BE(sat)
V
100
Saturation Voltage (mV)
CE(sat)
V
10
1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
@ IC=10I
B
B
Switching Time & Collector Current
Saturation Voltage & Collector Current
10.00
VCC=30V, IC=10IB1= -10I
1.00
B2
1000
On Voltage (mV)
100
1 10 100 1000 10000
BE(on)
V
@ VCE=5V
Collector Curren t ( mA)
Capacit ance & Reverse- Biased Voltage
1000
100
Capac itance (pF)
Cob
10
0.1 1 10 100
Reverse- Biased Vol tage (V)
0.10
Switchin g T imes ( us)
0.01
0.1 1.0 10.0
100000
10000
(mA)
C
1000
100
Collector Current-I
10
1
1 10 100 1000
Collector Current (A)
Safe Operating Ar ea
CE
Forward Voltage-V
(V)
PT=1ms
PT=100ms
PT=1s
Tst
Ton
Tf
HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A B
D
H
I
G
Spec. No. : HE6729-B
Issued Date : 1992.11.25
Revised Date : 1999.08.01
Page No. : 3/3
Marking :
E
M
C
K
HSMC Logo
Part Number
Date Code
Style : Pin 1.Base 2.Collector 3.Emitter
Product Series
Rank
3
2
N
4
1
P
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I -
O
DIM
Min. Max. Min. Max.
*
0.1508 B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N -
*
0.1000 E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 -
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*
16.25
*:Typical
*
3.83
*
2.54
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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