Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HSD879D
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 1/3
Features
• Charger-up time is about 1 ms faster than of a germanium transistor.
• Small saturation voltage can bring less power dissipation and flashing times.
TO-126ML
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.4 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage.................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current .............................................................................................................. 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Co ndition
BVCEO 10 - - V IC=1mA
BVEBO 6 - - V IE=10uA
ICBO - - 100 nA VCB=20V
IEBO - - 100 nA VBE=4V
*VCE(sat) - 0.3 0.4 V IC=3A, IB=60mA
*VBE - 0.83 1.5 V VCE=-1V, IC=-2A
*hFE 140 210 - VCE=2V, IC=3A
fT - 200 - MHZ VCE=10V, IC=50mA
Cob - 30 - pF VCB=10V, f=1KHZ
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HSD879D HSMC Product Specification
Page 2
HI-SINCERITY
y
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 2/3
1000
Curren t Gain & Collector C urrent
125oC
75oC
25oC
hFE
hFE @ VCE=2V
100
1 10 100 1000 10000
Collector Current-IC (mA)
ON Vol tage & Coll ect or Cur r ent
10.0
1000
100
Saturation Voltage (mV)
10
1000
100
Sat urati on Voltage & Col lector C urr ent
CE(sat)
V
1 10 100 1000 10000
B
@ IC=50I
75oC
125oC
Collector Current-IC (mA)
25oC
Cut off Frequency & Collector Current
VCE=10V
1.0
ON Voltage
BE(on)
V
@ VCE=2V
0.1
1 10 100 1000 10000
100
10
Capacitance (pF)
Capacitance & Reverse-Biased Voltage
Collector Current
Cob
Cutoff Fr eq uenc
10
1
1 10 100 1000
100
(mA)
10
C
1
Collector Cu r rent -I
Collector Curren t
Safe Operating Ar ea
PT=1ms
PT=100ms
PT=1S
1
1 10 100
Rev e r se Biased Vol tage (V)
0.1
1 10 100
Forwar d Voltage-VCE (V)
HSD879D HSMC Product Specification
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HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
A
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 3/3
Marking:
HD
S
B
789
D
D
C
N
M L K
E
F
3
2
1
O
H
I
G
J
Date Code
Style: Pin 1.Base 2.Collector 3.Emitter
Control Code
3-Lead TO-126ML Plastic Package
HSMC Packa
e Code: D
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD879D HSMC Product Specification
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