Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HSD879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 1/3
Features
• Charger-up time is about 1 ms faster than of a germanium transistor
• Small saturation voltage can bring less power dissipation and flashing times
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage.................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current............................................................................................................... 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Co ndition
BVCEO 10 - - V IC=1mA
BVEBO 6 - - V IE=10uA
BVCBO 30 - - V IC=10uA
BVCEX 20 - - V IC=1mA, VBE=3V
ICBO - - 100 nA VCB=20V
IEBO - - 100 nA VBE=4V
*hFE 140 210 400 VCE=2V, IC=3A
*VCE(sat) - 0.3 0.4 V IC=3A, IB=60mA
fT - 200 - MHZ VCE=10V, IC=50mA
Cob - 30 - pF VCB=10V, f=1MHZ
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HSD879 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 2/3
1000
Curren t Gain & Collector C urrent
125oC
75oC
25oC
hFE
hFE @ VCE=2V
100
1 10 100 1000 10000
1000
100
Cut o ff Frequency & Coll ector Current
Collector Current-IC (mA)
VCE=10V
1000
100
Saturation Voltage (mV)
10
100
Sat urati on Voltage & Col lector C urr ent
CE(sat)
V
1 10 100 1000 10000
B
@ IC=50I
75oC
125oC
Collector Current-IC (mA)
25oC
Capacitance & Reverse-B iased Voltage
Cob
10
Cutoff Frequency (MHz)...
1
1 10 100 1000
Collector Current ( mA)
Power Derating
800
700
600
500
400
300
200
Power Dis s ip ation- P D ( mW)
100
10
Capacitance (pF)
1
1 10 100
Reverse Biased Vol t age ( V)
0
0 50 100 150 200
Ambient Temp er at ure-Ta (oC)
HSD879 HSMC Product Specification
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HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 3/3
A
α2
B
31
2
Marking:
HD
S
789
Date Code Control Code
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Collector 3.Base
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
*: Typical
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
α1
α2
α3
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD879 HSMC Product Specification
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