Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HSD669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier complementary pair with HSB649A
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.....................................................................................+150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)....................................................................................... 1 W
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC) .................................................................................................. 1.5 A
IC Collector Current (Pulse) ................................................................................................. 3 A
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 180 - - V IC=1mA, IE=0
BVCEO 160 - - V IC=10mA, IB=0
BVEBO 5 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=160V, IE=0
*VCE(sat) - - 1 V IC=500mA, IB=50mA
VBE(on) - - 1.5 V IC=150mA, VCE=5V
*hFE1 100 - 320 IC=150mA, VCE=5V
*hFE2 30 - - IC=500mA, VCE=5V
fT - 140 - MHz IC=150mA , VCE=5V
Cob - 14 - pF VCB=10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank C D
Range 100-200 180-320
HSD669A HSMC Product Specification
Page 2
HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 2/3
1000
100
hFE
10
1 10 100 1000 10000
Cur rent Gain & Collector Current
125oC
25oC
75oC
hFE @ VCE=5V
Collector Current- IC (mA)
Sat urati on Voltage & Col lector Current
1000
25oC
75oC
1000
Sat ura tion Voltage & C ollector C urrent
100
Saturation Voltage (mV)
10
10 100 1000 10000
1000
125oC
75oC
25oC
CE(sat)
V
Collector Current- IC (mA)
ON Voltage & Collector C urrent
25oC
75oC
@ IC=10I
B
125oC
125oC
BE(ON)
V
BE(sat)
V
Saturation Voltage (mV)
100
1 10 100 1000 10000
Collector Current- IC (mA)
Capacita nce & Reverse-Biased Voltage
100
10
Cob
Capacitance (pF)
1
0.1 1 10 100
Rev e r se-Biased Voltage ( V)
@ IC=10I
B
ON Voltage (m V)
100
1 10 100 1000 10000
Collector Current- IC (mA)
Safe Operating Area
100000
10000
1000
Collect or Cur rent (mA
100
10
1 10 100 1000
Forwar d Voltage (V)
@ VCE=5V
PT=1ms
PT=100ms
PT=1s
HSD669A HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
A
D
C
N
M L K
E
F
3
2
1
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 3/3
Marking:
HD
S
B
O
H
I
G
J
Date Code
Style: Pin 1.Emitter 2.Collector 3.Base
669
A
Rank
Control Code
3-Lead TO-126ML Plastic Package
HSMC Packa
e Code: D
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: L94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD669A HSMC Product Specification
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