HI-SINCERITY
MICROELECTRONICS CORP.
HSD313
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD313 is designed for use in general purpose amplifier and
switching applications.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
Total Power Dissipation (Tc=25°C)..................................................................................... 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 60 V
BVCEO Collector to Emitter Voltage.................................................................................... 60 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=1mA, IE=0
BVCEO 60 - - V IC=10mA, IB=0
BVEBO 5 - - V IE=100uA, IC=0
ICBO - - 0.1 mA VCB=20V, IE=0
ICEO - - 5 mA VCE=60V, IB=0
IEBO - - 1 mA VEB=4V, IC=0
*VCE(sat) - - 1 V IC=2A, IB=0.2A
*VBE(on) - - 1.5 V IC=1A, VCE=2V
*hFE1 40 - 320 IC=1A, VCE=2V
*hFE2 40 - - IC=0.1A, VCE=2V
ft - 8 - V VCE=5V, IC=0.5A
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank C D E F
hFE 40-80 60-120 100-200 160-320
HSD313 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 2/4
1000
Cur rent G ain & C o llector Current
125oC
25oC
75oC
100
hFE
hFE @ VCE=2V
10
1 10 100 1000 10000
1000
Sat uration Voltage & Collector Current
CE(sat)
V
Collector Current-IC (mA)
B
@ IC=10I
1000
125oC
25oC
100
hFE
hFE @ VCE=4V
10
1 10 100 1000 10000
Collector Current-IC (mA)
75oC
Sat urati on Voltage & Collector Cu rrent
10000
Cur rent Gain & Collector Current
1000
CE(sat)
V
@ IC=50I
B
100
Saturat ion Volta ge ( m V)
75oC
10
1 10 100 1000 10000
Collector Current- IC (mA)
25oC
125oC
ON Voltage & Collector Current
10000
BE(ON)
V
@ VCE=2V
1000
25oC
ON Voltage ( m V)
125oC
75oC
25oC
75oC
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
125oC
Collector Current- IC (mA)
Switching Time & C ollector Current
10.00
B2
Switching Times (us)...
VCC=30V, IC=10IB1= -10I
1.00
0.10
Tstg
Ton
Tf
100
1 10 100 1000 10000
Collector Current- IC (mA)
0.01
0.1 1.0 10.0
Collector Current (A)
HSD313 HSMC Product Specification
HI-SINCERITY
)
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 3/4
100
10
Capacitance (pF)
1
0.1 1 10 100
Revers-Biased Vol t a ge ( V)
Cob
Output Characteristics at
Capa citance & Reverse- Biased Volt a ge
IB=1mA,2mA,3mA...10mA
IB=10mA
IB=9mA
IB=8mA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
Collector Current (m A
1600
1400
1200
1000
800
600
400
200
100000
PT=1ms
10000
(mA)
C
Collector Current-I
1000
100
10
1
PT=100ms
PT=1s
1 10 100
Safe Operating Area
Forwar d Voltage-VCE (V)
0
0 5 10 15
Collector Volt age ( V)
HSD313 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A
D
I
G
B
H
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 4/4
Marking:
E
C
Date Code
M
K
Style: Pin 1.Base 2.Collector 3.Emitter
H
3
SD
13
Rank
Control Code
3
2
N
4
1
OP
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD313 HSMC Product Specification
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