Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200201
Issued Date : 1998.01.06
Revised Date : 2002.01.25
Page No. : 1/4
HSC945SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC945 is designed for using driver stage of AF amplifier and low speed switching
applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature........................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipations
Total Power Dissipation (Ta=25°C)............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 50 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=100uA
BVCEO 50 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 100 nA VCB=60V, IE=0
IEBO - - 100 nA VEB=5V, IB=0
*VCE(sat) - 0.1 0.25 V IC=100mA, IB=10mA
*hFE1 50 - - VCE=6V, IC=0.1mA
*hFE2 135 - 600 VCE=6V, IC=1mA
fT 150 - 600 MHz IC=1mA , VCE=10V, f=100MHz
Cob - - 4 pF IE=0, VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank Q P K
Range 135-270 200-400 300-600
HSC945SP HSMC Product Specific at i on
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :HSP200201
Issued Date : 1998.01.06
Revised Date : 2002.01.25
Page No. : 2/4
1000
125oC
hFE
100
1 10 100
25oC
Collector Current-IC (mA)
75oC
hFE @ VCE=6V
Sat urat ion Voltage & Collector Current
1000
25oC
Current Gain & Collector Current
1000
CE(sat)
V
100
Satur ation Voltag e (mV)
10
0.1 1 10 100
B
@IC=10I
125oC
25oC
Collec tor Cur rent-IC (mA)
75oC
On Voltage & Collector Current
1
BE(sat)
V
@ IC=10I
Sat uration Voltage & Coll ector Curr ent
B
75oC
125oC
Saturat ion Voltag e ( m V)
BE(sat)
V
@ IC=10I
100
0.1 1 10 100
Collec tor Cur rent-IC (mA)
Ca pacitance & Re verse- Biased V o lt age
10
Cob
Capacitance (Pf )
On Volta ge ( m V)
B
0.1
0.1 1 10 100
Collector Current (mA)
Cut off Frequency & Collector Current
1000
fT @ VCE=5V
100
Cutoff Frequency (MHz)...
1
0.1 1 10 100
Reverse Biased Vol t ag e ( V)
10
1 10 100
Collector Current (mA)
HSC945SP HSMC Product Specific at i on
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200201
Issued Date : 1998.01.06
Revised Date : 2002.01.25
Page No. : 3/4
300
250
200
150
100
Power Dis s ip ation-PD (mW)
50
0
0 50 100 150 200
Ambient Tem per ature-T a (oC)
PD-Ta
HSC945SP HSMC Product Specific at i on
Page 4
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92SP Dimension
Spec. No. :HSP200201
Issued Date : 1998.01.06
Revised Date : 2002.01.25
Page No. : 4/4
Style: Pin 1.Emitter 2.Collector 3.Base
E
F
3
A
2
D
1
G
DIM
B
3-Lead TO-92SP Plastic Package, HSMC Package Code: SP
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
C
DIM
Min. Max. Min. Max.
A 0.1450 0.1650 3.70 4.20 E 0.0160 0.0240 0.41 0.61
B 0.1063 0.1300 2.70 3.30 F - *0.0150 - *0.38
C 0.5000 - 12.7 - G 0.0800 0.1050 2.03 2.67
D - *0.1000 - *2.54
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plati ng
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thicknes s includes lead finish thic kness, and minimum lead thickness is t he minimum thickness of base material.
4.If there is any questi on with pack i ng specification or packing m ethod, please contact your local HSMC sales office.
*: Typical
Important Notice:
• All rights are reserved. Reproduc tion in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to m ake changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product des ign, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, S ec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSC945SP HSMC Product Specific at i on
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