
HI-SINCERITY
MICROELECTRONICS CORP.
HSC945
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC945 is designed for using driver stage of AP amplifier and
low speed switching applications.
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2002.12.16
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 50 mA
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=100uA, IE=0
BVCEO 50 - - V IC=1mA. IB=0
BVEBO 5 - - V IE=10uA. IC=0
ICBO - - 100 nA VCB=60V, IE=0
IEBO - - 100 nA VEB=5V, IB=0
*VCE(sat) - 0.1 0.3 V IC=100mA, IB=10mA
*hFE1 50 - - VCE=6V, IC=0.1mA
*hFE2 135 - 600 VCE=6V, IC=1mA
fT 150 - 600 MHz VCE=6V, IC=10mA, f=100MHz
Cob - - 4 pF VCB=10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank Q P K
Range 135-270 200-400 300-600
HSC945 HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2002.12.16
Page No. : 2/4
1000
125oC
hFE
100
1 10 100
25oC
Collector Current-IC (mA)
75oC
hFE @ VCE=6V
Sat urati on Voltage & Coll ector Cu rrent
1000
25oC
Current Gai n & Collector Current
1000
CE(sat)
V
100
Satur ation Voltage ( m V)
10
0.1 1 10 100
B
@IC=10I
125oC
25oC
Collector Current- IC (mA)
75oC
On Vol tage & Col lector Current
1
BE(sat)
V
@ IC=10I
Sat urati on Voltage & Collector Curren t
B
75oC
125oC
Saturat ion Voltag e ( m V)
BE(sat)
V
@ IC=10I
100
0.1 1 10 100
Collector Current- IC (mA)
Ca pacitance & Reverse-Biased Volta ge
10
Cob
Capacitance (Pf )
On Volta ge ( m V)
B
0.1
0.1 1 10 100
Collector Current (mA)
Cutoff Frequency & Collector Current
1000
fT @ VCE=5V
100
Cutoff Frequency (MHz)...
1
0.1 1 10 100
Reverse Biased Volt ag e ( V)
10
1 10 100
Collector Curren t (m A)
HSC945 HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2002.12.16
Page No. : 3/4
10000
Safe Operating Area
PT=1ms
1000
100
Collect or Current (m A
PT=100ms
PT=1s
10
1
1 10 100
Forwar d Voltage (mV)
300
PD-Ta
250
200
150
100
Power Dis s ip ation- PD (mW)
50
0
0 50 100 150 200
Ambient Temper ature- Ta(oC)
HSC945 HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2002.12.16
Page No. : 4/4
A
α2
B
31
2
Marking:
HC
S
495
Date Code Control Code
Rank
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Collector 3.Base
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
*: Typical
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E-*0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
α1
α2
α3
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSC945 HSMC Product Specification