Datasheet HSC5094 Datasheet (HSMC)

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Page 1

HI-SINCERITY

MICROELECTRONICS CORP.

HSC5094

NPN SILICON BIPOLAR TRANSISTOR

Description

The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band.

Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 1/7

Features

SOT-23

• Low Noise and High Gain: NF=1.4dB, Ga=12dB @ VCE=2V, Ic=4.2mA, f=0.9GHz

• High Power Gain: MAG=13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz

Applications

• Low noise and high gain amplifiers

• Oscillator buffer amplifiers

Electrical Characteristics

• Maximum Ratings (Ta=25°C) Parameters Symbol Min. Typ. Max. Unit

Collector-Emitter Breakdown Voltage V Collector-Base Breakdow n Voltage V Emitter-Base Breakdow n Voltage V

EBO

Collector Current I Collector Power Dissipation P Junction Temperature T Stor age Temperature T

* Note: Here we define the point where the DC current gain drops off.

CEO CBO

@ IE=100uA - 2.5 - V

stg

-10- V

-18- V

-*20-mA

- 150 - mW

- 125 -

-50 - 125

°C °C

• Characterization Information (Ta=25°C)

Parameters Conditions Symbol Min Typ. Max Unit

Collector Cutoff Current V Emitter Cutoff Current V DC Current Gain V

Cutoff Frequency Minimum Noise Figure Associated Gain

Insertion Gain |S21|

in 50 Ohm system

HSC5094 HSMC Product Specification

=3V I

=1V I

=2V, IC =1mA h

=1V, IC =10mA - 7.6 - GHz

=3V, IC =12mA

=2V, IC =4.2mA, f =0.9GHz - 1.4 - dB

=5V, IC =4.5mA, f =0.9GHz

=2V, IC =4.2mA, f =0.9GHz - 12 - dB

=5V, IC =4.5mA, f =0.9GHz

=2V, IC =4.2mA, f =0.9GHz - 12.8 - dB

=5V, IC =4.5mA, f =0.9GHz

CBO EBO

|S21|

min

--1uA

50 80 200

-9-GHz

-1.6-dB

- 13.5 - dB

Page 2

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 2/7

S-Parameters

• VC=2V, IC=4.2mA, IB=60uA

FREQ. S11 S21 S12 S22

(GHz) Mag Ang Mag Ang Mag Ang Mag Ang

0.3 0.604 -54.55 7.842 133.59 0.067 51.54 0.669 -35.46

0.4 0.524 -68.94 7.093 123.62 0.077 48.20 0.583 -39.37

0.5 0.454 -81.62 6.422 114.96 0.084 46.25 0.518 -41.88

0.6 0.399 -92.38 5.768 107.71 0.090 45.71 0.468 -43.32

0.7 0.355 -102.51 5.226 101.24 0.096 45.45 0.431 -44.21

0.8 0.320 -111.90 4.756 95.56 0.101 45.48 0.400 -44.69

0.9 0.291 -121.04 4.367 90.53 0.107 46.55 0.380 -44.62 1 0.268 -129.71 4.011 85.55 0.113 46.59 0.364 -45.20

1.1 0.249 -138.30 3.717 81.44 0.118 47.32 0.348 -45.38

1.2 0.237 -147.20 3.490 77.18 0.125 48.06 0.339 -45.42

1.3 0.225 -155.29 3.229 73.05 0.131 48.45 0.330 -46.12

1.4 0.221 -163.42 3.049 69.95 0.137 48.55 0.324 -46.58

1.5 0.218 -171.96 2.880 65.80 0.144 49.30 0.318 -47.16

1.6 0.216 -179.45 2.708 62.11 0.151 49.54 0.314 -48.21

1.7 0.220 173.74 2.568 59.78 0.158 49.59 0.309 -48.87

1.8 0.223 166.14 2.465 55.42 0.167 49.92 0.310 -49.95

1.9 0.229 160.61 2.311 52.89 0.173 49.56 0.305 -51.14 2 0.239 154.93 2.230 50.57 0.181 49.96 0.305 -52.25

2.1 0.246 149.44 2.159 46.58 0.190 49.43 0.300 -54.01

2.2 0.255 146.00 2.032 44.85 0.198 49.13 0.298 -54.87

2.3 0.266 141.03 2.008 41.73 0.207 48.98 0.298 -56.73

2.4 0.275 137.61 1.914 38.98 0.215 48.15 0.295 -58.27

2.5 0.283 134.78 1.845 36.23 0.225 47.73 0.293 -60.00

2.6 0.296 131.62 1.807 34.63 0.235 47.19 0.293 -61.99

2.7 0.301 128.73 1.734 30.54 0.242 46.23 0.290 -63.35

2.8 0.314 126.55 1.678 29.10 0.252 45.96 0.292 -66.03

• Smoothed noise data (VC=2V, IC=4.2mA, IB=60uA) FREQ. FMIN GAMMA OPT Rn Ga F50-S F50-M G50

(GHz) (dB) Mag Ang (To 50) (dB) (dB) (dB) (dB)

0.3 0.80 0.622 13.9 0.45 18.89 1.67 2.33 17.89

0.6 1.01 0.401 29.9 0.35 15.66 1.4 1.74 15.22

0.9 1.21 0.282 48.2 0.29 13.05 1.42 2.01 12.80

1.2 1.42 0.239 68.6 0.27 10.97 1.57 1.82 10.86

1.5 1.63 0.246 90.8 0.24 9.34 1.79 1.79 9.19

1.8 1.84 0.276 114.6 0.21 8.08 2.04 2.45 7.84

2.1 2.04 0.303 139.6 0.16 7.10 2.30 1.87 6.69

2.4 2.25 0.301 165.5 0.14 6.33 2.50 2.50 5.64

2.7 2.46 0.242 -167.8 0.17 5.68 2.62 2.71 4.78

2.8 2.53 0.206 -158.8 0.19 5.48 2.65 2.91 4.50

HSC5094 HSMC Product Specification

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 3/7

• VC=5V, IC=4.5mA, IB=60uA

FREQ. S11 S21 S12 S22

(GHz) Mag Ang Mag Ang Mag Ang Mag Ang

0.3 0.601 -50.63 8.306 135.16 0.058 51.44 0.678 -29.88

0.4 0.520 -63.63 7.547 125.50 0.065 48.75 0.602 -32.11

0.5 0.448 -75.05 6.868 116.98 0.072 47.60 0.546 -33.33

0.6 0.391 -84.69 6.188 109.83 0.077 47.52 0.505 -33.75

0.7 0.343 -93.82 5.624 103.45 0.082 47.79 0.475 -33.95

0.8 0.304 -102.33 5.124 97.83 0.087 48.29 0.451 -33.81

0.9 0.271 -110.71 4.716 92.86 0.092 49.77 0.436 -33.39 1 0.244 -118.73 4.336 87.94 0.097 50.18 0.424 -33.71

1.1 0.221 -126.87 4.014 83.94 0.102 51.28 0.412 -33.60

1.2 0.204 -135.86 3.777 79.76 0.108 52.42 0.407 -33.56

1.3 0.188 -144.08 3.486 75.61 0.114 53.16 0.401 -34.10

1.4 0.180 -153.03 3.297 72.75 0.120 53.50 0.398 -34.42

1.5 0.174 -162.61 3.121 68.59 0.126 54.63 0.395 -34.93

1.6 0.168 -171.25 2.930 64.89 0.133 55.21 0.393 -35.76

1.7 0.171 -179.18 2.777 62.84 0.140 55.36 0.390 -36.39

1.8 0.173 171.39 2.676 58.35 0.148 56.18 0.393 -37.29

1.9 0.177 164.95 2.496 55.94 0.155 55.92 0.390 -38.39 2 0.187 158.33 2.413 53.90 0.162 56.69 0.393 -39.34

2.1 0.193 151.69 2.345 49.72 0.171 56.35 0.390 -40.76

2.2 0.202 148.00 2.192 48.29 0.178 56.24 0.389 -41.57

2.3 0.214 142.43 2.181 45.23 0.189 56.43 0.392 -43.10

2.4 0.223 138.68 2.076 42.50 0.196 55.84 0.390 -44.47

2.5 0.230 135.64 1.997 39.66 0.206 55.56 0.390 -46.00

2.6 0.244 132.44 1.961 38.47 0.217 55.08 0.392 -47.69

2.7 0.249 129.17 1.884 33.93 0.224 54.51 0.391 -48.94

2.8 0.262 127.23 1.820 32.88 0.235 54.48 0.395 -51.05

• Smoothed noise data (VC=5V, IC=4.5mA, IB=60uA) FREQ. FMIN GAMMA OPT Rn Ga F50-S F50-M G50

(GHz) (dB) Mag Ang (To 50) (dB) (dB) (dB) (dB)

0.3 0.87 0.631 12.4 0.49 19.43 1.80 2.40 18.39

0.6 1.08 0.411 26.3 0.38 16.36 1.51 1.84 15.83

0.9 1.28 0.288 42.5 0.32 13.85 1.51 2.38 13.47

1.2 1.49 0.237 61.0 0.29 11.84 1.65 1.88 11.54

1.5 1.70 0.233 81.7 0.27 10.24 1.85 1.88 9.89

1.8 1.91 0.251 104.9 0.23 9.00 2.09 2.50 8.55

2.1 2.12 0.267 130.5 0.19 8.03 2.32 1.81 7.40

2.4 2.33 0.256 158.5 0.16 7.27 2.51 2.61 6.35

2.7 2.54 0.193 -170.9 0.19 6.64 2.64 2.63 5.50

2.8 2.61 0.157 -160.1 0.22 6.45 2.68 2.92 5.20

HSC5094 HSMC Product Specification

Page 4

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 4/7

HSPICE 2G.6 Model

• NPN BJT Parameters

IS=1.444E-16 (A) IKR=10.0E-3 MJE=0.3882 TR=1.0E-9 (Sec) BF=85.9 ISC=1.21E-16 TF=1.22E-11 (Sec) CJS=2.43E-13 (F) NF=1.0 NC=1.01 XTF=1.70 VJS=0.5734 (V) VAF=45.9 (V) RB=4.30 (Ohm) VTF=0.69 (V) MJS=0.3798 IKF=160.3E-3 (A) IRB=20.0E-3 (A) ITF=0.1 (A) XTB=0.0 ISE=2.0E-18 (A) RBM=2.78 (Ohm) PTF=10.0 (deg) EG=1.11 (eV) NE=2.0 RE=1.011 (Ohm) CJC=2.38E-13 (F) XTI=3.0 BR=18.54 RC=16.69 (Ohm) VJC=0.7 (V) FC=0.9 NR=1.01 CJE=6.04E-13 (F) MJC=0.4474 VAR=6.299 VJE=1.003 (V) XCJC=0.3

• B’-E’ DIODE Parameters

IS=1.0E-22 (A) CJO=1.0E-15 (F) XTI=3.0 KF=0.0 RS=10.0 (Ohm) VJ=1.003 (V) FC=0.9 AF=1.0 N=1.0 M=0.3882 BV=0.0 (V) TT=0.0 (Sec) EG=1.11 (eV) IBV=1.0E-3 (A)

TNOM=25 (°C)

• C’-S’ DIODE Parameters

IS=1.0E-22 (A) CJO=1.0E-15 (F) XTI=3.0 KF=0.0 RS=0.0 (Ohm) VJ=0.5734 (V) FC=0.5 AF=1.0 N=1.0 M=0.3798 BV=0.0 (V)

TNOM=27 (°C)

TT=0.0 (Sec) EG=1.11 (eV) IBV=1.0E-3(A)

• Other Parasitic Parameters

=0.0 (Ohm) RSS=10.0 (Ohm) C2=150 (fF) L1=0.5 (nH)

RBX=0.0 (Ohm) RSC=250.0 (Ohm) C3=80 (fF) L2=0.5 (nH) RCX=0.0 (Ohm) CSP=20.89 (fF) Le=0.6 (nH) L3=0.6 (nH) RSX=5.0 (Ohm) CSC=41.79 (fF) Lb=0.85 (nH) RSP=450.0 (Ohm) C1=70 (fF) Lc=0 (nH)

Transistor Chip Equivalent Circuit Package Equivalent Circuit

C’

B’

G-P

S’

Base

Transistor

Chip

Collector

0.1nH

HSC5094 HSMC Product Specification

Emitter

Page 5

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 5/7

1.00E+00

1.00E-01

1.00E-02

1.00E-03

1.00E-04

1.00E-05

1.00E-06

1.00E-07

1.00E-08

Collector and Base Currents (A)

1.00E-09

1.00E-10 0 0.2 0.4 0.6 0.8 1 1.2

Fig.1 Typical Forward Gummel Plot

VCE=1V

Base - E mitt e r Bias Vo lta g e ( V )

5.0E-03

4.0E-03

3.0E-03

2.0E-03

Collec tor Currennt (A )

1.0E-03

0.0E+00 012345

Fig.3 Typical Output Characteristics

Ib=50uA

Ib=40uA

Ib=30uA

Ib=20uA

Ib=10uA

Collec tor Vo ltage (V)

Fig.2 Typical Forw ard Curre nt Gain & Collect or Cu r rent

100

Current Gain

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00

VCE=1V

Collector Curren t (A)

1.0E+10

9.0E+09

8.0E+09

7.0E+09

6.0E+09

5.0E+09

4.0E+09

3.0E+09

Cutoff Frequency (Hz)

2.0E+09

1.0E+09

0.0E+00

1.0E-04 1.0E-03 1.0E-02 1.0E-01

Fig.4 Typical fT & Collect o r Cu r r e nt

Vce = 1V Vce = 3 V

Collector Current (A)

Fig.5 Typical NFmin & Collector Current

4.5 4

3.5 3

2.5 2

NFmin (dB)

1.5 1

0.5 0

0.1 1 10 100

Collector Current (mA)

VCE=2V

20 18 16 14 12 10

Associated Gain (dB)

Fig.6 Typical Associated Gain & Coll ector Cu r rent

VCE=2V

8 6 4 2 0

0.1 1 10 100

Collector Current (mA)

HSC5094 HSMC Product Specification

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 6/7

Capacitanc e ( pF)

0.1

0.1 1 10

Fig.7 Capacitance & Rev er s e- Biased Vol tage

Cob

Rev e r se Biased Vol tage (V)

HSC5094 HSMC Product Specification

Page 7

HI-SINCERITY

MICROELECTRONICS CORP.

SOT-23 Dimension

Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 7/7

Marking:

T E

Control Code

3-Lead SOT-23 Plastic

Surface Mounted Package

HSMC Package Code: N

DIM

Style: Pin 1.Base 2.Emitter 3.Collector

*: Typical

Min. Max. Min. Max.

DIM

Inches Millimeters Inches Millimeters

Min. Max. Min. Max. A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177 B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67 C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15 D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75 G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65 H 0.0005 0.0040 0.013 0.10

Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.

Material:

• Lead: 42 Alloy; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

2.Controlling dimension: millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.

Head Office And Factory:

• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454

• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931

HSC5094 HSMC Product Specification

Datasheet HSC5094 Datasheet (HSMC)

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