Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6502
Issued Date : 1992.08.25
Revised Date : 2001.01.01
Page No. : 1/3
HSC3953S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High-definition CRT display video output, wide-band amplifier
applications.
Features
High fT: fT=500MHz
•
High breakdown voltage: VCEO=120V min
•
Small reverse transfer capacitance
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature..................................................................................... 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e...................................................................................... 120 V
VCEO Collector to Emitter Voltage ................................................................................... 120 V
VEBO Emitter to Base Voltage ............................................................................................. 3 V
IC Collector Current ...................................................................................................... 200 mA
Icp Peak Collector Current ............................................................................................ 400 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 120 - - V IC=10uA, IE=0
BVCEO 120 - - V IC=1mA, IB=0
BVEBO 3 - - V IE=100uA, IC=0
ICBO - - 0.1 uA VCB=80V, IE=0
IEBO - - 0.1 uA VEB=2V, IC=0
*VCE(sat) - - 1 V IC=30mA, IB=3mA
*VBE(sat) - - 1 V IC=30mA, IB=3mA
*hFE1 60 160 320 VCE=10V, IC=10mA
*hFE2 40 - - VCE=10V, IC=100mA
fT - 400 - MHz VCE=10V, IC=50mA,
Cob - 2.1 - pF IE=0, VCB=30V, f=1MHZ
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank D E F
Range 60-120 100-200 160-320
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6502
Issued Date : 1992.08.25
Revised Date : 2001.01.01
Page No. : 2/3
1000
VCE=10V
100
hFE
10
0.1 1 10 100 1000
Collector Curren t (mA)
Saturati on Volt age & Coll e ct or Curren t
1000
Current Gain & Col lector Curr ent
BE(sat)
V
@ IC=10I
B
1000
100
CE(sat)
V
10
Satu r ation Voltage (mV)
1
0.1 1 10 100 1000
Collector Curren t (mA)
@ IC=10I
B
Output Capaci tance & Rever se-Bia sed Voltage
10
Cob
Saturati on Volt age & Coll e ct or Curren t
Satu r ation Voltage (mV)
100
0.1 1 10 100 1000
Collector Curren t (mA)
Safe Operating Area
1000
PT=1ms
PT=100ms
PT=1s
100
Collector Curren t (A)
10
1 10 100 1000
Forwar d Vol tage (V)
Capacitance (Pf)
1
0.1 1 10 100
Reverse-Biased Vol t ag e ( V)
Power Dera tin g
1000
900
800
700
600
500
400
300
Power Dissipation-PD(mW)
200
100
0
0 20 40 60 80 100 120 140 160
Ambient Temp eratur e- Ta(oC)
HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6502
Issued Date : 1992.08.25
Revised Date : 2001.01.01
Page No. : 3/3
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Collector 3.Base
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
*5
*2
*2
°
°
°
-
-
-
*:Typical
*5
°
*2
°
*2
°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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