Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 1/3
HSC3953
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High–definition CRT display video output, wide-band amplifier.
Features
High fT: 500MHz
•
High Breakdown Voltage: BVCEO=120Vmin
•
Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF
•
(Ta=25°C)
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)................................................................................... 1.3 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 8 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 120 V
BVCEO Collector to Emitter Voltage................................................................................. 120 V
BVEBO Emitter to Base Voltage........................................................................................... 3 V
IC Collector Current....................................................................................................... 200 mA
Icp Peak Collector Current............................................................................................. 400 mA
(Ta=25°C)
Electrical Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 120 - - V IC=100uA, IE=0
BVCEO 120 - - V IC=1mA, IB=0
BVEBO 3 - - V IE=100uA, IC=0
ICBO - - 0.1 uA VCB=120V, IE=0
IEBO - - 0.1 uA VEB=2V
*VCE(sat) - - 1 V IC=30mA, IB=3mA
*VBE(sat) - - 1 V IC=30mA, IB=3mA
*hFE1 60 - 320 IC=10mA, VCE=10V
*hFE2 40 - - IC=100mA, VCE=10V
fT - 400 - MHz IC=50mA , VCE=10V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank D E F
Range 60-120 100-200 160-320
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 2/3
1000
Current Gai n & Collector Current
100
hFE
10
0.1 1 10 100 1000
1000
Saturation Volt age & Coll ector Cu rren t
Collector Curren t (m A )
VCE=10 V
BE(sat)
V
@ IC=10I
B
1000
100
CE(sat)
V
10
Satu r ation Voltage (mV)
1
0.1 1 10 100 1000
Collector Curren t (m A )
@ IC=10I
B
Output Capacitance & Reverse-Biased Voltage
10
Saturation Volt age & Coll ector Cu rren t
Satu r ation Voltage (mV)
100
0.1 1 10 100 1000
1000
100
Collector Current (A)
10
1 10 100 1000
Collector Curren t (m A )
Safe Operatin g Area
PT=1ms
PT=100ms
PT=1s
Forward Voltage (V)
Capacitance (Pf)
1
0.1 1 10 100
Reverse-Biased Vol t ag e ( V)
Cob
HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 3/3
Marking :
A
D
C
N
M L K
E
F
3
2
1
O
H
G
J
B
I
HSMC Logo
Part Number
Date Code
Ink Marking
Style : Pin 1.Emitter 2.Collector 3.Base
Product Series
Rank
3-Lead TO-126ML Plastic Package
DIM
HSMC Packa
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
e Code : D
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Tai pei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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