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HI-SINCERITY
MICROELECTRONICS CORP.
HSC3417
NPN EPITAXIAL PLANAR TRANSISTOR
Features
High–Definition CRT Display Video Output Applications
•
High Breakdown Voltage: BVCEO=300V
•
Spec. No. : HE6618-C
Issued Date : 1994.05.12
Revised Date : 2000.10.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)................................................................................... 1.2 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 7 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 300 V
BVCEO Collector to Emitter Voltage................................................................................. 300 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current....................................................................................................... 100 mA
Electrical Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 300 - - V IC=100uA
BVCEO 300 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 100 nA VCB=200V
IEBO - - 100 nA VEB=4V
*VCE(sat) - - 600 mV IC=20mA, IB=2mA
*VBE(sat) - - 1 V IC=20mA, IB=2mA
*hFE 40 - 320 IC=10mA, VCE=10V
fT - 7 0 - MHz IC=10mA ,VCE=30V, f=100MHz
Cob - 2.6 - pF VCB=30V, f=1MHz
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank C D E F
Range 40-80 60-120 100-200 160-320
HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6618-C
Issued Date : 1994.05.12
Revised Date : 2000.10.01
Page No. : 2/3
1000
Current Gain & Collector Cur rent
100
VCE=10 V
hFE
10
1
0.1 1 10 100 1000
Collector Curren t (mA)
Capacitance & Reverse-Biased Voltage
100
100000
10000
1000
Satu r ation Vol t age (mV)
100
Saturation Voltage & Collector Cur rent
BE(sat)
V
CE(sat)
V
10
0.1 1 10 100 1000
Collector Curren t (mA)
@ IC=10I
@ IC=10I
B
B
Cutoff Frequency & Collector Current
1000
10
Capac itan c e (pF)
Cob
1
0.1 1 10 100 1000
1000
100
(mA)
C
Collector-I
10
Reverse Biased Voltage (V)
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
100
VCE=30 V
Cutoff Frequency (MHz)
10
1 10 100
Collector Curren t (mA)
1
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
HSMC Product Specification
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HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
Spec. No. : HE6618-C
Issued Date : 1994.05.12
Revised Date : 2000.10.01
Page No. : 3/3
Marking :
A
D
C
N
M L K
E
F
3
2
1
O
H
G
J
B
I
HSMC Logo
Part Number
Date Code
Ink Marking
Style : Pin 1.Emitter 2.Collector 3.Base
Product Series
Rank
3-Lead TO-126ML Plastic Package
DIM
HSMC Packa
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
e Code : D
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Tai wan R.O. C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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