Page 1
HSC119
Silicon Epitaxial Planar Diode for High Speed Switching
Features
• Low capacitance. (C=2.0pF max)
• Short reverse recovery time. (trr =3.0ns max)
• U ltra small F lat P ackage (UFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HSC119 H1 UFP
ADE-208-615 (Z)
Rev 0
Apr. 1998
Outline
Cathode mark
Mark
12
H1
1. Cathode
2. Anode
Page 2
HSC119
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Average forward current I
Peak rectified current I
Non-Repetitive peak
RM
R
O
FM
*1
I
FSM
forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Note 1. Within 1µs forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F1
V
F2
R
Capacitance C — — 2.0 pF VR = 0V, f = 1 MHz
Reverse recovery
*1
time
t
rr
Notes 1. Reverse recovery time test circuit
— — 0.8 V IF = 10 mA
— — 1.2 IF = 100 mA
— — 0.1 µAVR = 80V
— — 3.0 ns IF = 10 mA, VR = 6V RL=50Ω
85 V
80 V
100 mA
300 mA
4A
DC
Ro =50
Ω
Pulse
Generator
Supply
0.1µF
Trigger
Ω
3k
Sampling
Oscilloscope
Rin =50
Ω
2
Page 3
Main Characteristic
HSC119
1.0
-1
10
(A)
F
-2
10
Forward current I
Ta=75°C
Ta=25°C
Ta=-25°C
-3
10
0 0.2 0.8
Forward voltage V
0.6
F
Fig.1 Forward current Vs. Forward voltage
1.00.4
(V)
f=1MHz
1.2
-4
10
-5
10
-6
10
(A)
R
-7
10
-8
10
-9
10
Reverse current I
-10
10
-11
10
02040
60 80
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
Ta=75°C
Ta=50°C
Ta=25°C
100
10
1.0
Capacitance C (pF)
-1
10
10
-1
1.0
Reverse voltage V R (V)
Fig.3 Capacitance Vs. Reverse voltage
10
3
Page 4
HSC119
Package Dimensions
12
Cathode Mark
H1
1.2 ± 0.10
1.6 ± 0.10
0.3 ± 0.05
0.8 ± 0.10
Unit : mm
1. Cathode
2. Anode
0.6 ± 0.10
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
UFP
—
SC-79
0.0016
4
Page 5
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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