Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HSB857D
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature.............................................................................................. -50~+150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).....................................................................................1.5 W
Total Power Dissipation (Tc=25°C)......................................................................................10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.......................................................................................-60 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current.............................................................................................................. -3 A
IC Collector Current (IC Peak)........................................................................................... -4.5 A
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -60 - - V IC=-50uA
BVCEO -50 - - V IC=-1mA
BVEBO -5 - - V IE=-50uA
ICBO - - -1 uA VCB=-50V
ICEO - - -1 uA VCE=-40V
IEBO - - -1 uA VEB=-4V
*VCE(sat) - -0.3 -1 V IC=-2A, IB=-0.2A
*VBE(sat) - - -1.5 V IC=-2A, IB=-0.2A
*hFE 170 - 400 IC=-500mA, VCE=-3V
fT - 15 - MHz VCE=-5V, IC=-500mA, f=100MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HSB857D HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 2/4
1000
125oC
25oC
100
hFE
10
1 10 100 1000 10000
Collector Current - IC (mA)
75oC
hFE @ VCE=3V
Sat urati on Voltage & Collector Current
10000
Cur ren t Ga in & C ollector Cu rrent
BE(sat)
V
@ IC=10I
B
1000
100
Satur ation Voltag e (mV)
10
Sat urati on Voltage & Col lector Current
CE(sat)
V
1 10 100 1000 10000
B
@ IC=10I
125oC
Collector Current-IC (mA)
75oC
25oC
Capa citance & Rev er se- B i ased Voltage
1000
1000
Saturation Voltage (mV)
100
1 10 100 1000 10000
25oC
125oC
Collector Current-IC (mA)
75oC
Safe Operating Area
10
PT=1ms
(A)
C
1
Collect or Curre n t-I
PT=100ms
PT=1s
100
Capacitance (pF)
10
1 10 100
1.6
1.4
1.2
1
0.8
0.6
0.4
PD(W) , Power Dissipation
0.2
Rev e r se Biased Voltage ( V)
Cob
PD - Ta
0.1
1 10 100 1000
Forwar d Voltage- VCE (V)
0
0 50 100 150 200
Ambient Temperatur e - Ta (oC )
HSB857D HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 3/4
12
10
8
6
4
PD(W), Power Dissipation
2
0
0 50 100 150 200
Ambient Temperatur e - Tc (oC)
PD - Tc
HSB857D HSMC Product Specification
Page 4
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
A
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 4/4
Marking:
HB
S
B
587
D
D
C
N
M L K
E
F
3
2
1
O
H
I
G
J
Date Code
Ink Marking
Style: Pin 1.Emitter 2.Collector 3.Base
Control Code
3-Lead TO-126ML Plastic Package
HSMC Packa
e Code: D
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. M ax. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes: 1. Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2. Controlling dimension: millimeters.
3. Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4. If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F., No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB857D HSMC Product Specification
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