Datasheet HMC210MS8 Datasheet (Hittite)

MICROWAVE CORPORATION

GaAs MMIC VOLTAGE VARIABLE ATTENUATOR 1.5 - 2.3 GHz

FEBRUARY 2001

HMC210MS8

2

ATTENUATORS

SMT

Features

SINGLE POSITIVE VOLTAGE CONTROL: 0 to +2.5V

HIGH ATTENUATION RANGE: >50 dB @ 1.9 GHz

HIGH INPUT IP3: +15 dBm Typical
(All Attenuation States)

ULTRA SMALL PACKAGE: MSOP

General Description

The HMC210MS8 is a miniature absorp­tive voltage variable attenuator in an 8­lead MSOP package. The device oper­ates with a positive supply voltage (+2.5V),
and a positive control voltage. A unique
feature is the high third order intercept
point for all attenuation states. The
HMC210MS8 is ideal for operation in PCS
applications at 1.9 GHz and W-CDMA
applications through 2.2 GHz. Operation
up to 2.3 GHz is possible, with a reduced
attenuation range of 31 dB.

Guaranteed Performance V

= +2.5 Vdc, 50 Ohm System, -40 to +85°C

dd

Parameter Condition Min Typical Max Units

Insertion Loss
(Vctl = 0 V Min.Atten.)

Attenuation Range
(Vctl=0to+2.5V)

Return Loss
(Vctl=0to+2.5V)

Input Power for 0.1 dB
Compression (f = 1.9 GHz)

Input Power for 1.0 dB
Compression (f = 1.9 GHz))

Input Third Order Intercept
(f = 1.9 GHz, two tones @ +5dBm)

Rise / Fall Time (tRise /tFall)
Note 1

On Time (tOnTotal)
Note 2

Note 1:Ri se T ime(tRise) and Fall Time (tFall) are measured between the 10% and 90% attenuation values.
Note 2:The On Time (tOn Total)is defined as the time fromthe 50% control signal level point to the maximum attenuation
level.

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1.8 - 2.0 GHz

1.7 - 2.1 GHz

1.5 - 2.3 GHz

1.8 - 2.0 GHz

1.7 - 2.1 GHz

1.5 - 2.3 GHz

1.5 - 2.0 GHz

2.0 - 2.3 GHz
Min.Atten.

Atten.>2.0 dB
Min.Atten.

Atten.>2.0 dB
Min.Atten.

Atten.>2.0 dB

1.5 - 2.3 GHz 0.9 uS

1.5 - 2.3 GHz 2.6 uS

44
39

31

17

0

30
10

3.3

3.4

3.0 - 5.0
55

43

40

9
6

15

-5

20

3

35
15

4.9

5.5

7.5

dB
dB
dB

dB
dB
dB

dB
dB

dBm
dBm

dBm
dBm

dBm
dBm

2 - 32

HMC210MS8

MICROWAVE CORPORATION

HMC210MS8 VOLTAGE VARIABLE ATTENUATOR 1.5 - 2.3 GHz

Relative Attenuation vs. Control
Voltage@1.9 and 2.2 GHz

0

-10

-20

-30

-40

-50

-60

RELATIVE ATTENUATION (dB)

-70
0 0.5 1 1.5 2 2.5

f= 1.9 GHz

CONTROL VOLTAGE (V)

f= 2.2GHz

Attenuation vs. Temperature
Normalized to +25°C @1.9 GHz

15

10

5

0

-5
+85 C

-10

NORMALIZED ATTENUATION (dB)

-15
0 0.5 1 1.5 2 2.5

CONTROL VOLTAGE (V)

-40 C

Broadband Insertion Loss

0

-2

-4

-6

-8

INSERTION LOSS (dB)

-10

-12

1.5 1.7 1.9 2.1 2.3 2.5

FREQUENCY (GHz)

-40 C

+85 C

+25 C

Input IP3 vs. Control Voltage
@1.9 GHz

40
35
30
25
20
15

INPUT IP3 (dBm)

10

5
0

0 0.5 1 1.5 2 2.5

+25 C

CONTROL VOLTAGE (V)

Typical Input P1dB Compression
@1.9 GHz vs. Temperature

Input Power For 1 dB Compression Point

Test Condition
(1.9 GHz)

Min. Attenuation 0.0 +2.5 20 20 21 dBm
Max.Attenuation +2.5 +2.5 19 16 25 dBm
WorstCase P1dB +1.0 +2.5 3 4 3 dBm

V

CTL

(Vdc)

Vdd
(Vdc)

Broadband Maximum Relative
Attenuation and Return Loss

0

Vctl = +2.5 V

+25 C
ATTEN.

1.5 1.7 1.9 2.1 2.3 2.5

FREQUENCY (GHz)

RELATIVE ATTENUATION (dB)

-10

-20

-30

-40

-50

-60

-70

-80

FEBRUARY 2001

-40 C

+85 C

+25C +85C -40C Units

Vctl = 0 V

+85 C ATTEN

-40 C
ATTEN.

0

-5

-10

-15

-20

-25

-30

-35

-40

2

ATTENUATORS

SMT

RETURN LOSS (dB)

S - Parameter data is available On-Line at www.hittite.com

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 33

HMC210MS8

MICROWAVE CORPORATION

HMC210MS8 VOLTAGE VARIABLE ATTENUATOR 1.5 - 2.3 GHz

FEBRUARY 2001

Typical Performance for 1.9 GHz Applications

2

ATTENUATORS

SMT

Attenuation vs. Control Voltage

1.9 GHz

0

-10

-20

-30

-40

-50

-60

RELATIVE ATTENUATION (dB)

-70
0 0.5 1 1.5 2 2.5

+85 C

CONTROL VOLTAGE (V)

-40 C

+25 C

Return Loss vs. Control Voltage

1.9 GHz

0

-4

-8

-12

-16

INPUT RETURN LOSS (dB)

-20
0 0.5 1 1.5 2 2.5

CONTROL VOLTAGE (V)

Typical Performance for 2.2 GHz Applications

Attenuation vs. Control Voltage

2.2 GHz

0

-10

-20

-30

-40

-50

-60

RELATIVE ATTENUATION (dB)

-70
0 0.5 1 1.5 2 2.5

+85 C

CONTROL VOLTAGE (V)

-40 C

+25 C

Return Loss vs. Control Voltage

2.2 GHz

0

-4

-8

-12

-16

INPUT RETURN LOSS (dB)

-20
0 0.5 1 1.5 2 2.5

T=+85C

T= -40C

CONTROL VOLTAGE (V)

T=+85C

T= +25 C

T= -40C

T= +25 C

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 34

HMC210MS8

MICROWAVE CORPORATION

HMC210MS8 VOLTAGE VARIABLE ATTENUATOR 1.5 - 2.3 GHz

FEBRUARY 2001

Functional Diagram

RF2 V

GND GND

PIN 1

* NOTE: DC blocking capacitors are required for RFports. 100 pF RF chip
capacitors (0603 size) are recommended on RF1 &RF2 ports.

V

dd

CTL

GNDGNDRF1

Outline Drawing

GND

Vdd

RF2

0.116/ 0.120
(2.95/ 3.05)

GND

Control and Bias Voltages

V

LTC

ddV001+@cdV1.0-/+cdV5.2+ µA

001-@cdV5.2+ot0 µ 001+otA µA

Absolute Maximum Ratings

V

CTL

Vdd +
Maximum Input Power

(Vdd = +2.5 Vdc)
Storage Temperature -65 to +150deg.C
Operating

Temperature

-0.2 Vdc to Vdd

8

Vdc

+26 dBm
+

-40 to +85deg.C

@Min Attenuation,Vctl= +0.0V

20

dBm

@Att.> 2 dB

LOT NUMBER

2

ATTENUATORS

SMT

0.116/ 0.120
(2.95/ 3.05)

HMC

210

0.188/ 0.196
(4.78/ 4.98)

XXXX

YYWW

DATE CODE
YY= YEAR

PIN 1

RF1

CTL

GND

GND

V

WW= WEEK

PIN 1 (REF)

0.032/ 0.036

0.038/ 0.042
(0.96/ 1.07)

1. MATERIAL:

2. PLATING: LEAD - TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS), UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13)

4. TAPE AND REEL SHIPMENT PACKAGING AVAILABLE, SEE PAGE 10 - 1

(0.81/ 0.91)

(0.30)

0 to 5 deg

0.021 MIN TYP
(0.53)

0.0256 TYP
(0.65)

A) PACKAGE BODY - LOW STRESS INJECTION - MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED.
B) LEADFRAME MATERIAL: COPPER ALLOY

0.012 TYP

0.005/ 0.007
(0.13/ 0.18)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 35

2

ATTENUATORS

HMC210MS8

MICROWAVE CORPORATION

HMC210MS8 VOLTAGE VARIABLE ATTENUATOR 1.5 - 2.3 GHz

FEBRUARY 2001

Evaluation Circuit Board

SMT

The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to
that shown below. A sufficient number of VIA holes should be used to connect the top and bottom ground planes.
The evaluation circuit board as shown is available from Hittite upon request.

Evaluation Circuit Board Layout Design Details

Layout Technique Grounded Co-Planar Waveguide (GCPW)
Material FR4
Dielectric Thickness 0.028" (0.71 mm)
50 Ohm Line Width 0.037" (0.94 mm)
Gap to Ground Edge 0.010" (0.25 mm)
Ground VIA Hole Diameter 0.014" (0.36 mm)

Connectors SMA-F ( EF - Johnson P/N 142-0701-806)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 36

HMC210MS8

MICROWAVE CORPORATION

HMC210MS8 VOLTAGE VARIABLE ATTENUATOR 1.5 - 2.3 GHz

NOTES:

FEBRUARY 2001

2

ATTENUATORS

SMT

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 37