Page 1
'99
new!
MICROWAVE CORPORATION
HMC194MS8
GaAS MMIC MSOP8 SPDT SWITCH DC - 3 GHz
7
FEBRUARY 2001
Features
ULTRA SMALL PACKAGE: MSOP8
HIGH ISOLATION: 50 dB
POSITIVE CONTROL: 0/+3 to 0/+7V
V01.0700
General Description
The HMC194MS8 is a low-cost SPDT
switch in an 8-lead MSOP package for use
in applications which require high isolation between two RF paths. The device
can control signals from DC to 3 GHz and
is especially suited for PDC, DCS, PCS,
and 2.4 GHz ISM frequency bands. The
design has been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive
voltage control operation at very low DC
currents with control inputs compatible with
CMOS and most TTL logic families. RF 1
or RF2 is a reflective open when "OFF".
Applications include local oscillator multiplexing in cellular/PCS basestation applications which require high isolation.
Guaranteed Performance V
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SWITCHES
ssoLnoitresnI
SPDT
SMT
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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tpecretnIredrOdrihTtupnIlortnoCV5+/0
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LAFt/ESIRt)FR%01/09/FR%09/01(L
5(FFOt/NOt)FR%09/01otLTC%0
= 0/ +5 Vdc, 50 Ohm System, -40 to +85 deg. C
ctl
2FR/1FR
2FR/1FR
lortnoCV5+/0noisserpmoCBd1rofrewoPtupnIzHG0.1-5.0
)enoThcaEmBd7+(
zHG0.1-CD
zHG0.2-CD
zHG5.2-CD
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zHG0.1-CD
zHG0.2-CD
zHG5.2-CD
zHG0.3-CD
zHG0.1-CD
zHG0.2-CD
zHG5.2-CD
zHG0.3-CD
zHG0.3-5.0
zHG0.1-5.0
zHG0.3-5.0
zHG0.3-CD
74/54
34/93
13
42
81
41
31
31
91
71
93
73
7.0
7.0
8.0
9.0
15/94
64/24
53
82
12
71
71
71
32
12
34
14
01
42
9.0
9.0
1.1
2.1
7 - 52
Bd
Bd
Bd
Bd
Bd
Bd
Bd
Bd
Bd
Bd
Bd
Bd
mBd
mBd
mBd
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Sn
Sn
Page 2
MICROWAVE CORPORATION
HMC194MS8 MSOP8 SPDT SWITCH DC - 3 GHz
new!
HMC194MS8
'99
V01.0700
Insertion Loss
0
-0.5
-1
-1.5
-2
INSERTION LOSS (dB)
-2.5
-3
0123
FREQUENCY (GHz)
Return Loss
FEBRUARY 2001
Isolation
0
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
-70
0123
RF1
FREQUENCY (GHz)
RF2
7
0
-10
S22
-20
S11
RETURN LOSS (dB)
-30
-40
0123
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
7 - 53
SWITCHES
SPDT
SMT
Page 3
'99
new!
MICROWAVE CORPORATION
HMC194MS8 MSOP8 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
Input 0.1 and 1.0 dB
Compression vs Control Voltage
30
P1 dB at 900 MHz
25
20
0.1 AND 1 dB
15
INPUT POWER FOR
P0.1 dB at 1900 MHz
COMPRESSION (dBm)
10
45678
P1 dB at 1900 MHz
Control Input (Vdc)
P0.1 dB at 900 MHz
HMC194MS8
Input Third Order Intercept vs
Control Voltage
60
55
INTERCEPT (dBm)
INPUT THIRD ORDER
50
45
40
45678
900 MHz
1900 MHz
Control Input (Vdc)
V01.0700
Compression vs Control Voltage
7
SWITCHES
SPDT
Caution: Do not operate in 1dB compression at power levels
above +25 dBm and do not 'hot switch' power levels greater
than +18 dBm (Control =0/ +5Vdc).
DC blocks are required at ports RF, RF1, RF2.
SMT
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Distortion vs Control Voltage
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
7 - 54
Page 4
MICROWAVE CORPORATION
HMC194MS8 MSOP8 SPDT SWITCH DC - 3 GHz
new!
HMC194MS8
'99
V01.0700
Functional Diagram
PIN 1
GND
RF2 GND
A
B
RF
RF1
N/C
Absolute Maximum Ratings
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erutarepmeTegarotSCged051+ot56-
erutarepmeTgnitarepOCced58+ot04-
T ruth Table
*Control Input Tolerances are +/- 0.2 Vdc
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A
03+58-0 NOFFO
05+293-66NOFFO
07+0002-072NOFFO
B
)cdV(
3+0058-FFONO
5+066293-FFONO
7+0 0720002-FFONO
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)cdV(
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)Au(
FEBRUARY 2001
htaPlangiS
otFR
1FR
otFR
2FR
7
Outline
RF1
0.116/0.120
(2.95/3.05)
0.188/0.196
(4.78/4.98)(2.95/3.05)
0.032/0.036
(0.81/0.91)
0.012 TYP
(0.30)
0-5 DEG
XXXX
YYWW
0.021 MIN TYP
(0.53)
LOT NUMBER
DATE CODE
YY= YEAR
WW= WEEK
PIN 1 (REF)
0.005/0.007
(0.13/0.18)
1) MATERIAL:
A) PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED
B) LEADFRAME MATERIAL: COPPER ALLOY
2 . PLATING: LEAD-TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13)
7 - 55
GND
RF2
0.116/0.120
HMC
194
PIN 1
0.038/0.042
(0.96/1.07)
0.0256 TYP
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
A B RF N/C
(0.65)
SWITCHES
SPDT
SMT
Page 5
'99
new!
MICROWAVE CORPORATION
HMC194MS8 MSOP8 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
Typical Application Circuit
RF2
Pin 1
+Vdd
HMC194MS8
V01.0700
RF1
GND
GND
A
B
N/C
Notes:
7
1. Set logic gate and switch Vdd = +3v to +5v, and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 7 Volts applied to the CMOS logic gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.
4. Highest RF signal power capability is achieved with Control set to 0/+7V.
SWITCHES
SPDT
SMT
CTL
RF
74HC04 or
74HCT04
See " Design Techniques Enhance Isolation in Switch Assemblies"
for HMC194MS8 Applications, Page 8-24
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
7 - 56
Page 6
MICROWAVE CORPORATION
HMC194MS8 MSOP8 SPDT SWITCH DC - 3 GHz
new!
HMC194MS8
'99
V01.0700
FEBRUARY 2001
Evaluation Circuit Board
The circuit board used in the final application should use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground leads should be connected directly to the ground plane
similar to that shown below. A sufficient number of VIA holes should be used to connect the top and bottom
ground planes. The evaluation circuit board as shown is available from Hittite upon request.
7
Evaluation Circuit Board Layout Design Details
Layout Technique Grounded Co-Planar Waveguide (GCPW)
Material FR4
Dielectric Thickness 0.028" (0.71 mm)
50 Ohm Line Width 0.037" (0.94 mm)
Gap to Ground Edge 0.010" (0.25 mm)
Ground VIA Hole Diameter 0.014" (0.36 mm)
Connectors SMA-F ( EF - Johnson P/N 142-0701-806)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
7 - 57
SWITCHES
SPDT
SMT
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