2FCSREFFCS driver block reference voltage
3FCSINFCS control input pin
4FCSRSFCS sense pin
5TRRRSTRR sense pin
6VFCSFCS driver and TRR driver power supply
7FCSPFCS driver P output
8FCGNDFCS driver and TRR driver GND
9FCSNFCS driver N output
10TRRPTRR driver P output
11TRRNTRR driver N output
12TRYPTRY driver P output
13TRYNTRY driver N output
14VSLDSLD driver and TRY driver power supply
15SLGNDSLD driver and TRY driver GND
16SLDNSLD driver N output
17SLDPSLD driver P output
18VBSTBooster output pin. This circuit generates a voltage about 1.5 V above that of the
VSPN pin.
19B1Booster pumping capacitor connection
20B2
21RNFSpindle driver current detection
22UU phase output
23VV phase output
24WW phase output
25VSPNSpindle and booster power supply
26WFILW phase low pass filter. Connect a filter C to this pin during GND.
27VFILV phase low pass filter. Connect a filter C to this pin during GND.
30UFILU phase low pass filter. Connect a filter C to this pin during GND.
31REFINReference voltage of spindle and slide
32VCTLSpindle control input. Generates forward torque when a DC voltage higher than
REFIN is applied, and brake when a DC voltage lower than REF is applied.
33AGCFor AGC. Holds the level used for IC internal processing fixed even if the B-EMF
level fluctuates due to the rotation speed.
34CTSpindle center tap
35PCSpindle driver phase compensation
3
Page 4
HA13568AT
Pin Description (cont)
Pin No.Pin NameFunction
36PHASEOutputs the B-EMF zero cross phase. Open corrector. (See the timing chart)
37BRKSELTo select the brake mode. Lo: Short brake, Hi: Reverse full brake
(when forward torque input: BRKSEL = H)
38VREGSVoltage regulator sense pin (VREGS ≈ 3.3 V output)
39VREGFVoltage regulator force pin
40CEChip enable. Input Hi: active
41CT1Time constant for clock oscillator circuit. The clock oscillator frequency is
determined by the external capacitor and resistor Ct1 and Rt.
42CT3Time constant for PWM carrier oscillator. The carrier frequency is determined by
the external capacitor and resistor Ct3 and Rt.
43VSSControl block power supply. 5 V
44CT2Time constant for start-up oscillator. The start-up oscillator frequency is
determined by the external capacitor and resistor Ct2 and Rt.
45RTReference voltage (3.3 V). The IC’s internal reference current is determined by
this voltage and the external resistor Rt.
46SLDLIMSLD output maximum duty setting
47SLDINSLD control input pin
48TRYFTRY driver forward input
49TRYRTRY driver reverese input
50TRYLIMTRY output voltage setting pin
51NCNo connection
52NC
53NC
54TRRINTRR control input pin
55TRRREFTRR driver block reference voltage
1, 28, 29, 56, TABGND
4
Page 5
Block Diagram
UFIL
30
VFIL
27
WFIL
26
PHASE
36
CT2
VCTL
REFIN
CE
Rt
RT
CT1
FCSIN
TRRIN
SLDIN
VREGS
VREGF
44
32
31
37
40
45
41
3
2
54
55
47
46
38
39
Ct2
BRKSEL
Ct1
FCSREF
TRRREF
SLDLIM
C102
VSSVSPNAGC
WVU
B-EMF
detection
Vspn
Tmask
Mask
time
Start-up
circuit
Brake
CLK
CLK
OSC
Vreg
TAB4248
SLD
control
CT3
Commutation
OTSD
TRYLIM
Ct3
50
Vref
Drive
mode
TRYF
Vbst
Vfcs
2
Vfcs
2
Vbst
49
TRYR
1.5A
SPN
output
Vbst
Vbst
1.5AH
bridge
Vbst
0.5AH
bridge
253343
U
VSPN
W
Current
control
Bias
P
0.5A
BTL
N
P
0.5A
BTL
N
P
N
P
N
CT
34
U
22
V
23
W
24
RNF
21
PC
35
B1
19
B2
20
VBST
18
6
VFCS
FCSP
7
FCSRS
4
FCSN
9
TRRP
10
TRRRS
5
TRRN
11
8
FCGND
14
VSLD
SLDP
17
SLDN
16
TRYP
12
TRYN
13
15
SLGND
51 ,,52 53 : NC pin
HA13568AT
Rnf
FCS
TRR
SLD
M
TRY
M
5
Page 6
HA13568AT
Timing Chart
1. Start-up
CE
CT2
Output
current
(U phase)
Output
current
(V phase)
Output
current
(W phase)
PHASE0
0
0
+
0
−
+
0
−
+
0
−
Tc2
4Tc2
2Tc2
4Tc2
4Tc2
B-EMF
Mask period
4Tc2
4Tc2
6Tc2
8Tc2
10Tc2
12Tc2
Synchronous modeB-EMF mode
14Tc2
16Tc2
Vhct2
Vlct2
Note: Tc2 is as follows.
8 (Vhct2 − Vlct2) Rt Ct2
Tc2 =
Where,Vhct2
Vlct2
6
Vrt
: CT2 pin high voltage (See electrical characteristics)
: CT2 pin low voltage (See electrical characteristics)
Ct1150 pF≥ 120 pFTime constant for CLK oscillation. Use a
Ct20.033 µFTime constant for start-up oscillation. Use a
Ct3470 pF≥ 390 pFPWM carrier oscillation time constant5
Q1Transistor for voltage regulator
Note:1. The output current maximum value Iospnmax of SPN driver is controlled according to the
Value
following equation. However, Vspncl is the current limiter reference voltage. (See the electrical
characteristics)
Iospnmax =
2. The maximum duty Dmax of SLD driver output is controlled according to the following equation.
Dmax =−× 100 (%)
However,
Rt = Rt1 + Rt2,≥
Where, Vrt: RT pin voltage (See the electrical characteristics)
Since Vrt ≈ Vhct3, Dmax is not limited at 100% when Rt1 = 0 Ω.
3. The CLK oscillation frequency is determined by the following equation.
fclk =
fclk =
Vhct3 − Vlct3
Vlct3 : CT3 pin low voltage (≈ 1.3 V)
Vhct3 : CT3 pin high voltage (≈ 3.3 V)
Vrt
Vrt
8 Ct1 Rt ∆Vct1
8 Ct1 Rt ∆Vct1
Reccomended
RangePurposeNote
capacitor with good temperature characteristics.
capacitor with good temperature characteristics.
Vspncl
Rnf
Rt2
Rt
Rt2RtVlct3
Vrt
Vlct3
Vrt
Vrt
3
4
12
Where, Vrt: RT pin voltage (See the electrical characteristics)
∆Vct1 : CT1 pin voltage amplitude (≈ 1 V)
4. The Ct2 for start-up oscillation is determined by the following equation.
1
Tc2 =
6
Ct2 =
8 Rt (Vhct2 − Vlct2)
Where, J: Spindle motor inertia (kg · cm · S2)
P: Number of spindle motor poles (Total number of S poles and N poles)
Kt: Spindle motor torque constant (kg · cm / A)
Vhct2 : CT2 pin high voltage (≈ 3.3 V)
Vlct2 : CT2 pin low voltage (≈ 1.3 V)
J
P Kt Ispnmax
Tc2 Vrt
Page 13
HA13568AT
5. The PWM oscillation frequency fpwm is determined by the following equation.
fpwm =
Where, Vhct3 : CT3 pin high voltage (≈ 3.3 V)
6. The C103 to C105 for B-EMF filter are determined by the following equation.
π ⋅ Rflt ⋅ No ⋅ P
Where, Rfill: B-EMF detection output resistor (See the electrical characteristics)
7. The FCS and TRR is determined by the following equation.
Voltage drive:
Gv =
Current drive:
Gm =
Where, R1: Resistor of IC inside (≈30kΩ)
8. The output voltage Vout of voltage regulator is determined by the following equation.
Vout = 3.3 1 +
8 Ct3 Rt (Vhct3 − Vlct3)
Vlct3 : CT3 pin low voltage (≈ 1.3 V)
21
No: Maximum rotation speed (rpm)
R1
Rin + R2
((Rin + R2) ⋅ Rs)
R2: Resistor of IC inside (≈7kΩ)
Rin: Resistor value inserted in the input (Ω)
VintrylimVss to VsldV
SPN output currentIospn1.5A3
FCS & TRR & TRY output currentIofcs0.5A3
SLD output currentIosld1.5A3
Power dissipationP
T
Junction temperatureTj160°C1
Storage temperature rangeTstg–55 to +125°C
Note:1. Operating voltage range is shown below.
Vss = 4.25 to 5.75 V
Vspn = 4.25 to 13.8 V
Vfcs = 4.25 to 13.8 V (However, the output high voltage is clamped at 7 V.)
Vsld = 4.25 to 13.8 V
Tjopr = 0 to +135°C
2. Applied to BRKSEL, VCTL, REFIN, CE, FCSIN, FCSREF, TRRIN, TRRREF, SLDIN, SLDLIM,
TRYF and TRYR.
3. ASO (Area of Safety Operation) of each output transistor is shown below (TBD).
5W4
14
2.0
1.5
1.0
0.5
0.2
Corrector Current Ic (A)
0.1
The voltage between Corrector and Emitter Vce (V)The voltage between Corrector and Emitter Vce (V)
ASO of SPN driverASO of SLD driver
t = 0.1ms
t = 1ms
t = 10ms
210152015
2.0
1.5
1.0
t = 0.1ms
0.5
t = 1ms
t = 10ms
0.2
Corrector Current Ic (A)
0.1
210152015
4. Thermal resistance is shown below.
θj-tab ≤ 12°C / W (back side tab soldering area is 70% or more)
θj-a ≤ 25°C / W (mounted on 4 layer multi glass-epoxy board, back side tab soldering area is
SPNInput currentIinspn——±5.0µAVctl = 0 to Vss–1VVCTL,2
currentREF voltage rangeVref1.6—3.0VREFIN
controlDead zone voltageVdzspn±50—±120mVVref reference
Current control
gain
DriveChange thresholdVctl—0.5±0.1VVref referenceVCTL5
modevoltagef
SLDInput currentIinsld——±5.0µAVsld = 0 to Vss–1VSLDIN
controlInput voltage rangeVinsld0—4.0V
Voltage
regulator
OTSDOperating
Output resistanceRflt—10±20%kΩUFIL, VFIL,
Threshold voltage
of PHASE
occurrence
frequency
Start-up oscillation
frequency
Limiter input
current
PWM oscillation
frequency
Control gainD/V8090100%/V7
Offset voltageVossld——20mVSLDIN = REFIN
Output sink currentIsinkreg8.512.2—mAVREGS = 4 V,
Output voltageVoutreg3.1353.303.465V
temperature
HysteresisThys—50—°C
Gctl—–12±1.5dBRNF
PHASE
Viemf—40±50%mVppVSPN ≥ Vss + 3VFU, V, W6
fclk210240270kHzRt = 10 kΩ,
fct2437485534HzRt = 10 kΩ,
Isldlim——±5.0µASLDLIM
fpwm333842.35kHzRt = 10 kΩ,
Tsd135160—°C8
—≥f
—28±50%mVppVSPN ≤ Vss + 3V
±50%HzSOFT SW modeU, V, W5
CT2
–20%HzSW mode
CT2
Ct1 = 82 pF
Ct2 = 0.033 µF
Ct3 = 470 pF
VREGF = 4 V
PinsNote
WFIL
F
CT1
CT2
17
Page 18
HA13568AT
Note:1. The output saturation voltage is the sum of the upper and lower saturation voltages.
2. See figure 1. Where,
Gctl = 20 log
∆Vrnf
∆Vctl
Vspncl
Vrnf (V)
Reverse
torque
Forward
torque
Vdzspn
∆Vrnf
∆Vctl
Figure 1
Vref
0Vctl (V)
Reverse brake Short brake
3. Where,
Vqfcs =
Vqtrr =
Vfcsp + Vfcsn
2
Vtrrp + Vtrrn
2
4. See figure 2. Where,
Vfcsn (Vtrrn)
∆Vfcsin
Vfcsp (Vtrrp)
(∆Vtrrin)
∆Vfcsp
(∆Vtrrp)
Gvfcs = 20 log
Gvtrr = 20 log
∆Vfcsp
∆Vfcsin
∆Vtrrp
∆Vtrrin
∆Vfcsn
∆Vfcsin
∆Vtrrn
∆Vtrrin
Vfcsp (Vtrrp) &
Vfcsn (Vtrrn)
Vref0Vfcsin (Vtrrin)
Figure 2
5. The circuit operates in soft switching drive mode only when the control input (Vctl) is lower than
f
CT2
and f
is higher than the threshold voltage. See figure 3.
PHASE
(Hz)
SOFT SW mode
Figure 3
PHASE
f
f
CT2
SW mode
0V
SW mode
0.5V
CTL
− REFIN
6. PHASE is output only when B-EMF exceeds the threshold voltage.
18
Page 19
7. See figure 4. Where,
D/V =
∆D
∆Vin
Duty
100
(%)
SLDP = PWM
SLDN = H
HA13568AT
SLDP = H
SLDN = PWM
Vref
∆Vin
∆D
Figure 4
8. Design guide only.
9. Vlimtry = VTRYP – VTRYLIM, or VTRYN – VTRYLIM
0Vinsld (V)
19
Page 20
HA13568AT
Reference Data
SPN Driver Output Saturation Voltage vs.
3
2
1
0
Output Saturation Voltage Vsatspn (V)
SLD Driver Output Saturation Voltage vs.
4
3
2
1
0
Output Saturation Voltage Vsatsld (V)
TRY Driver Output Saturation Voltage vs.
3
Output Current
Upper arm + Lower arm
Upper arm, Lower arm
1.00.501.5
Output Current Iospn (A)
Output Current
Upper arm + Lower arm
Upper arm, Lower arm
1.00.501.5
Output Current Iosld (A)
Output Current
FCS Driver Output Saturation Voltage vs.
3
2
1
0
Output Saturation Voltage Vsatfcs (V)
TRR Driver Output Saturation Voltage vs.
3
2
1
0
Output Saturation Voltage Vsattrr (V)
RT Voltage vs. Junction Temperature
3.6
Output Current
Upper arm + Lower arm
Upper arm, Lower arm
0.40.200.6
Output Current Iofcs (A)
Output Current
Upper arm + Lower arm
Upper arm, Lower arm
0.40.200.6
Output Current Iotrr (A)
20
2
1
Upper arm + Lower arm
0
Output Saturation Voltage Vsattry (V)
Upper arm, Lower arm
0.40.200.6
Output Current Iotry (A)
3.4
3.2
RT Voltage Vrt (V)
3.0
Junction Temperature Tj (°C)
7550025100135
Page 21
Package Dimensions
HA13568AT
Preliminary
Top view
0.21
0.19
14.0
14.2 Max
2956
6.10
128
+0.04
−0.05
+0.03
−0.05
0.50
0.08
M
0.65 Max
0.08
1.20 Max
(7.5)
1
28
0.17 ± 0.05
0.15 ± 0.04
Unit: mm
1.0
8.10 ± 0.15
0°− 8°
0.50 ± 0.1
0.05 ± 0.05
Under view
5629
(2.8)
Hitachi Code
JEDEC
EIAJ
(reference value)
Weight
TTP-56DT
0.32 g
21
Page 22
HA13568AT
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URLNorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
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(America) Inc.
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Brisbane, CA 94005-1897
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
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Asia (Taiwan): http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong): http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
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Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
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Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
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Tel: <852> (2) 735 9218
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