Page 1
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
HIGH-SPEED SWITCHING USE
FY6BCH-02
● 2.5V DRIVE
DSS ..................................................................................20V
● V
● r
DS (ON) (MAX) ............................................................. 30mΩ
D........................................................................................... 6A
● I
OUTLINE DRAWING Dimensions in mm
➄➇
6.4
4.4
➃➀
➀➇
➁➂➅➆
➃➄
➄
1.1
DRAIN
SOURCE
GATE
➇
➅➆
3.0
0.275
0.65
➀
➃
➁➂
TSSOP8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 10µH
Typical value
20
±10
6
42
6
1.5
6.0
1.5
–55 ~ +150
–55 ~ +150
0.035
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
Page 2
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V , VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 4V
ID = 3A, VGS = 2.5V
ID = 6A, VGS = 4V
ID = 6A, VDS = 10V
VDS = 10V , VGS = 0V, f = 1MHz
VDD = 10V, ID = 3A, VGS = 4V, R GEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to ambient
IS = 1.5A, dis/dt = –50A/µs
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
20
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
25
32
0.15
13.0
800
280
200
20
55
90
100
—
—
50
—
±0.1
0.1
1.3
30
40
0.18
—
—
—
—
—
—
—
—
1.10
83.3
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
20
16
12
8
4
DRAIN CURRENT ID (A)
0
0 0.2 0.4 0.6 0.8 1.0
(TYPICAL)
3V
2.5V
C (°C)
VGS = 5V
4V
TC = 25°C
Pulse Test
PD = 1.5W
2V
1.5V
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
DRAIN CURRENT ID (A)
TC = 25°C
–1
10
Single Pulse
7
5
2
0
10
357 2 10
357 2 10
1
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 5V
4V
8
3V
2.5V
2V
6
4
2
DRAIN CURRENT ID (A)
0
0 0.1 0.2 0.3 0.4 0.5
tw = 10µs
100µs
1ms
10ms
100ms
DC
357
DS (V)
PD = 1.5W
TC = 25°C
Pulse Test
1.5V
2
2
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
Page 3
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
(V)
0.6
DS (ON)
0.4
VOLTAGE V
0.2
DRAIN-SOURCE ON-STATE
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
(A)
D
12
8
4
DRAIN CURRENT I
ID = 12A
GS
(V)
TC = 25°C
V
DS
= 10V
Pulse Test
6A
3A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
(mΩ)
60
DS (ON)
40
20
DRAIN-SOURCE ON-STATE
RESISTANCE r
0
10
–1
2
0
10
357 2
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
2
10
VDS = 10V
7
Pulse Test
5
4
(S)
3
fs
2
1
10
7
5
4
3
ADMITTANCE y
FORWARD TRANSFER
2
TC = 25°C
75°C
125°C
VGS = 2.5V
4V
1
10
357 2
D
(A)
357
10
2
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
2
3
10
7
5
4
3
2
2
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
TCh = 25°C
4
f = 1MH
3
V
GS
= 0V
2
–1
10
23457 23457
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
10
GS
DS
(V)
Ciss
Coss
Crss
(V)
10
0
10
0
10
23457 234557
DRAIN CURRENT I
10
1
D
(A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
2
10
7
5
4
t
r
3
2
t
d(on)
1
10
7
TCh = 25°C
SWITCHING TIME (ns)
5
V
DD
4
V
GS
3
R
GEN
1
2
10
–1
t
d(off)
t
f
= 10V
= 4V
= RGS = 50Ω
23457 23457
10
0
10
1
DRAIN CURRENT ID (A)
Sep.1998
Page 4
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
5.0
TCh = 25°C
I
D
4.0
3.0
2.0
= 6A
VDS = 7V
10V
15V
(V)
GS
1.0
GATE-SOURCE VOLTAGE V
0
0246810
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
1
10
VGS = 4V
7
DS (ON)
DRAIN-SOURCE ON-STATE RESISTANCE r
I
D
DS (ON)
DRAIN-SOURCE ON-STATE RESISTANCE r
= 6A
5
Pulse Test
3
2
0
10
7
5
3
2
–1
10
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V
Pulse Test
16
(A)
S
12
8
4
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
VDS = 10V
I
D
= 1mA
1.6
(V)
1.2
GS (th)
0.8
VOLTAGE V
0.4
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
TC = 125°C
75°C
25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
2
10
7
D = 1.0
(ch–a)
5
th
3
0.5
2
0.2
1
10
7
0.1
5
0.05
3
2
0
10
7
5
3
2
–1
10
–4
–3
23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.02
0.01
Single Pulse
–2
23 57
23 57
10
PULSE WIDTH t
10
–1
23 57
10
0
23 57
w
P
(s)
DM
tw
T
tw
D
=
T
1
2
10
23 57
10
23 57
10
3
Sep.1998
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