
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MOSFET:N-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4895
FX855
Features
· Composite type composed of a ow ON-resistance Nchannel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.
· The FX855 is formed with 2 chips, one being
equivalent to the 2SK1470 and the other the SB0509, placed in one package.
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEFSOM[
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
· Marking:855
SSD
SSG
D
PD
P
Tc=25˚C
D
P
Mounted on ceramic board (750mm
D
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2119
[FX855]
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
06V
51±V
2A
WP ≤ elcycytud,sµ01 ≤ %18A
2
×0.8mm)
elcyc1,evaweniszH05 01A
Continued on next page.
6W
5.1W
˚C
˚C
09V
59V
005Am
˚C
˚C
52098HA (KT)/71095TS (KOTO) TA-0115 No.4895-1/4

FX855
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEFSOM[
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveR
ecnatsiseRlamrehT
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
r
f
DS
R
F
R
rrtIFI=
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
I
)no(SD
D
SD
SD
SD
)no(d
)ffo(d
I
S
I
R
I
F
VRV54= 08Aµ
R
a-jhtR 58
R
Mounted on ceramic board (750mm
0=06V
SG
V,V06=
0=001Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01=
Am1=0.10.2V
D
A1=2.10.2S
D
V,Am1=
V01=53.054.0
SG
V,A1=
V4=54.06.0
SG
zHM1=f,V01=051Fp
zHM1=f,V01=06Fp
zHM1=f,V01=21Fp
tiucriCtseTdeificepseeS6sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS02sn
V,A2=
0=0.1V
SG
Aµ003=09V
Am005= 7.0V
elcyCzHM1=f,V01=43Fp
sgnitaR
nimpytxam
tiucrICtseTdeificepseeS,Am001= 01sn
2
×0.8mm)
tinU
Ω
Ω
˚C/W
Switching Time T est CIrcuit [MOSFET]
Trr Test Circuit [SBD]
No.4895-2/4

FX855
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4895-4/4