Datasheet FW245 Datasheet (SANYO)

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Page 1

Ordering number : ENN7133

FW245

N-Channel Silicon MOSFET

FW245

DC / DC Converter Applications

Features

•

Low ON-resistance.

•

4V drive.

•

Ultrahigh-speed switching.

Package Dimensions

unit : mm

2129

[FW245]

0.3

4.4

6.0

1 : Source1 2 : Gate1 3 : Source2

0.2

4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1

SANYO : SOP8

Specifications

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Total Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C

DSS GSS

D T

PW≤10µs, duty cycle≤1% 52 A Mounted on a ceramic board (1200mm2✕0.8mm) 1unit Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 W

30 V

±20 V

1.7 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS GSS

yfs



RDS(on)1 ID=7A, VGS=10V 26 34 mΩ RDS(on)2 ID=4A, VGS=4.5V 39 55 mΩ

=1mA, VGS=0 30 V VDS=30V, VGS=0 1 µA VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=7A 7 10 S



Marking : W245 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM T A-2608

No.7133-1/4

Page 2

FW245

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 550 pF Output Capacitance Coss VDS=10V , f=1MHz 170 pF Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 90 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 41 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=7A 10 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=7A 1.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=7A 1.0 nC Diode Forward Voltage V

See specified Test Circuit. 73 ns

See specified Test Circuit. 54 ns

IS=7A, VGS=0 0.82 1.2 V

Switching Time Test Circuit Electrical Connection

D1 D1 D2 D2

10V

PW=10µs D.C .≤1%

VDD=15V

ID=7A

RL=2.1Ω

OUT

Ratings

min typ max

Unit

P.G

8.0V

-- A D

Drain Current, I

1 0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

60 55 50 45 40

(on) -- mΩ

35 30 25 20 15 10

Static Drain-to-Source

On-State Resistance, R

5 0

0 2 4 6 8 101214161820

10.0V

50Ω

6.0V

4.5V

3.5V

-- V

3.0V

Drain-to-Source V oltage, V

RDS(on) -- V

ID=7.0A

4.0A

Gate-to-Source V oltage, V

FW245

VGS=2.5V

-- V

IT00557

Ta=25°C

IT04012

Top view

S1 G1 S2 G2

-- V

8 7

-- A D

Drain Current, I

1 0

0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0

Gate-to-Source V oltage, V

(on) -- mΩ

RDS(on) -- Ta

=4.0A, V

Static Drain-to-Source

On-State Resistance, R

--50 --25 0 25 50 75 100 125 150

=7.0A, V

Ta=75°C

=4.5V

--25°C

25°C

=10.0V

Ambient Temperature, Ta -- °C

-- V

VDS=10V

IT00558

IT04013

No.7133-2/4

Page 3

100

7 5

fs -- S

7 5

3 2

1.0 7

5 3

Forward Transfer Admittance, 

0.1

1000

7 5

3 2

100

7 5

Ciss, Coss, Crss -- pF

3 2

0 5 10 15 20 25

Ciss, Coss, Crss -- V

yfs -- I

25°C

75°C

75327532

Drain Current, I

1.0

Ciss

Coss

Crss

Drain-to-Source V oltage, V

SW Time -- I

Drain Current, I

(off)

1.0 10

-- Ta

Switching Time, SW Time -- ns

1000

100

1.0

2.5

7 5

3 2

7 5

3 2

7 5

3 2

0.1

23 57

Mounted on a ceramic board (1200mm2✕0.8mm)

VDS=10V

Ta= --25°C

-- A

f=1MHz

-- V

VDD=15V VGS=10V

td(on)

23 57

-- A

IT00561

IT00563

IT04015

FW245

-- V

--25°C

-- V

7 5

3 2

1.0 7

-- A

3 2

0.1 7

5 3

0.01

Forward Current, I

7 5

3 2

0.001

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Ta=75°C

25°C

Diode Forward V oltage, V

VDS=10V

ID=7.0A

-- V

6 5

Gate-to-Source V oltage, V

1 0

0123456789

VGS -- Qg

Total Gate Charge, Qg -- nC

100

IDP=52A

7 5

3 2

ID=7A

7 5

-- A

1.0

7 5

Operation in this

area is limited by RDS(on).

Drain Current, I

0.1

7 5

Ta=25°C

Single pulse

Mounted on a ceramic board (1200mm2✕0.8mm) 1unit

0.01

0.1 1.0 10

Drain-to-Source V oltage, V

A S O

DC operation

100m

<10µs

1ms

10ms

-- V

VGS=0

IT00562

IT04014

100µs

IT04016

1.2

723 5723 5723 5723 5

100

-- W

2.0

1.7

1.5

Total dissipation

1unit

1.0

0.5

Allowable Power Dissipation, P

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT04017

No.7133-3/4

Page 4

FW245

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice.

No.7133-4/4