Page 1
FW114
Ordering number :EN5848
S/W Load Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOS FET
Features
· Low ON resistance.
· 2.5V drive.
Package Dimensions
unit:mm
2129
[FW114]
58
0.3
0.595
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI
tnerruCffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoT
egrahCecruoS-ot-etaG
egrahC)"relliM"(niarD-ot-etaG
egatloVdrawroFedoiDV
D
PD
D
T
R
R
r
f
gQVSDV,V01–=
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %123–A
Mounted on ceramic board (1000mm2×0.8mm) 1unit
Mounted on ceramic board (1000mm
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
1IDV,A3–=
)no(SD
2IDV,A1–=
)no(SD
)no(d
)ffo(d
sgQVSDV,V01–=
dgQVSDV,V01–=
I
DS
S
V,Am1–=
0=02–V
SG
V,V02–=
SD
SG
SD
SD
SD
SD
V,A3–=
0=001–Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01–=
Am1–=4.0–4.1–V
D
A3–=58S
D
V4–=0709mΩ
SG
V5.2–=29031mΩ
SG
zHM1=f,V01–=006Fp
zHM1=f,V01–=003Fp
zHM1=f,V01–=051Fp
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS041sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS58sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
SG
4.4
14
5.0
1.27
0.43
2
×0.8mm)
A3–=42Cn
D
A3–=3Cn
D
A3–=6Cn
D
1.8max
1.5
0.1
nimpytxam
6.0
0.2
sgnitaR
1:Source1
2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1
SANYO:SOP8
02–V
01±V
3–A
7.1W
0.2W
˚C
˚C
tinU
52698TS (KOTO) TA-1217 No.5848-1/3
Page 2
Switching Time Test Circuit
VDD=–10V
ID=–3A
IN
G
RL=3.33Ω
D
0V
–4V
PW=10µs
D.C.≤1%
V
IN
V
V
FW114
OUT
P.G
A
-
Drain Current, I
D
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0 -0.1
50Ω
–5.0V
–4.0V
–6.0V
–8.0V
-0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -0.5
Drain-to-Source Voltage, VDS-V
100
VDS=–10V
7
5
|-S
3
fs
y
2
10
7
5
3
2
1.0
7
Forwaard Transfer Addmittance,|
0.1
200
180
160
–mΩ
)
140
on
DS (
120
100
80
60
40
Static Drain-to-Source
ON-State Resistance, R
20
-0.01
0
-60 -40
22335577
-20 0 20 40 60 80 100 120 140
Case Temperature, Tc - ˚C
FW114
S
ID-
V
DS
–2.5V
–3.5V
–3.0V
–2.0V
y
|
fs
|
-
I
D
Ta=–25˚C
75˚C
-0.1
2357
-1.0
Drain Current, ID-A
(on)
R
DS
-
=–1A,V
D
I
=–3A,V
I
D
Tc
VGS=–1.5V
2357
=–2.5V
S
G
=–4V
GS
25˚C
-10
ID-
-6
V
10V
=–
DS
-5
A
-4
-
D
-3
-2
V
Drain Current, I
-1
0
25˚C
-1.0 -1.5 -2.0 -2.5
Gate-to-Source Voltage, V
(on)
200
180
160
–mΩ
)
140
on
DS (
120
100
80
60
40
20
Static Drain-to-Source
ON-State Resistance, R
0
0-1
=–1A
D
I
-2 -3 -4 -5 -6 -7 -8 -9 -10
=–3A
D
I
R
DS
-
Gate-to-Source Voltage,V
IF-
-10
VGS=0
7
5
3
2
-A
-1.0
F
7
5
3
2
-0.1
7
Forward Current, I
5
3
2
-0.01
0 -0.2 -0.4 -0.6 -0.8 -1.2-1.0
V
25˚C
Ta=75˚C
Diode Forward Voltage, VSD–V
GS
75˚C
V
SD
–25˚C
Ta=–25˚C
DS
GS
- V
GS
-V
Tc=25˚C
No.5848-2/3
Page 3
10000
7
5
3
2
1000
7
5
3
2
100
Ciss,Coss,Crss - pF
7
5
3
2
10
0-4-2 -6 -8 -10 -14-12 -16 -18 -20
Ciss,Coss,Crss
-
V
DS
Drain-to-Source Voltage,VDS–V
1000
100
Switching Time, SW Time – ns
1.0
VDD=–10V
7
V
5
GS
3
2
7
5
3
2
10
7
5
3
2
-0.1
SW Time
=–4V
23 577
-1.0
-
I
D
23 57
Drain Current, ID–A
P
(FET2) – W
D
Allowable Dissipation, P
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2
(FET2)
D
M
ounted on ceram
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-
P
(FET1)
D
ic board (1200mm
2
×
0.8mm)
Allowable Dissipation, PD(FET1) – W
t
t
t
r
f
d(on)
f=1MHz
Ciss
Coss
Crss
t
d(off)
FW114
-10
-10
VDS=–10V
I
=–3A
D
-9
-8
–V
GS
-7
-6
-5
-4
-3
-2
Gate-to-Source Voltage, V
-1
0
0
2 4 6 8 10 12 14 2416 18 20 22
VGS-
Total Gate Charge, Qg – nC
-100
7
5
IDP=–32A
3
2
-10
7
-A
5
3
D
2
,I
-1.0
7
5
3
2
Drain Current
-0.1
Ta=25˚C
1pulse
1unit
2
Mounted on ceramic board (1200mm2×0.8mm)
-0.01
-0.01 -0.1
Operation in this area is
limited by R
2335577
A S O
ID=–3A
(on).
DS
2357 23 5 237
Drain -to-Source Voltage, V
2.5
W
2.0
–
D
1.7
1.5
1.0
0.5
Allowable Dissipation, P
Mountes in ceramic board(1200mm
0
020
PD-
Total Dissipation
1 unit
40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
Qg
10µs
10ms
100ms
DC operation
-1.0 -10
DS
-V
Ta
2
0.8mm)
×
100µs
1m
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5848-3/3
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