Datasheet FW313 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

N-Channel and P-Channel Silicon MOSFETs

Ultrahigh-Speed Switching Applications

Ordering number:ENN6389

FW313

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

58

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package.

· High-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

SSD SSG

D

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm2×0.8mm)

T

Package Dimensions

unit:mm

2129

[FW313]

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

WP ≤ elcycytud,sµ01 ≤ %18202–A

0.43

0.1

6.0

1 : Source1 2 : Gate1

0.2

3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8

sgnitaR

lennahc-Nlennahc-P 0303–V 02±02±V 75–A

7.1W

0.2W

˚C ˚C

tinU

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

]lennahc-N[

egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD SD

SSD)RB( SSD SSG

)ffo(VSDI,V01=

1)no(IDV,A7=

2)no(IDV,A4=

I

V,Am1=

D

V

SD

V

SG

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A7=931S

D

V01=5223mΩ

SG

V4=7305mΩ

SG

30300TS (KOTO) TA-2373 No.6389-1/6

sgnitaR

nimpytxam

Continued on next page.

tinU

FW313

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

]lennahc-P[

egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

r

f

DS

SSD SSG

SG

R

SD

R

SD

r

f

DS

)no(d

)ffo(d

I

SSD)RB(

V V

)ffo(VSDI,V01–=

1)no(IDV,A5–=

2)no(IDV,A2–=

)no(d

)ffo(d

I

SD SD SD

V,A7=

S

D

SD SG

SD SD SD

S

Marking : W313

zHM1=f,V01=007Fp zHM1=f,V01=083Fp zHM1=f,V01=081Fp

tiucriCtseTdeificepseeS51sn tiucriCtseTdeificepseeS081sn tiucriCtseTdeificepseeS09sn tiucriCtseTdeificepseeS08sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

0=58.02.1V

SG

V,Am1–=

V,V03–=

V,V61±=

D

D SG SG

V,A5–=

SG

D

0=03–V

SG

0=01–Aµ

SG

0=01±Aµ

SD

Am1–=0.1–5.2–V A5–=58S V01–=2435mΩ

V4–=58021mΩ

zHM1=f,V01–=028Fp zHM1=f,V01–=074Fp zHM1=f,V01–=032Fp

tiucriCtseTdeificepseeS51sn tiucriCtseTdeificepseeS051sn tiucriCtseTdeificepseeS58sn tiucriCtseTdeificepseeS09sn I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=0.1–5.1–V

sgnitaR

nimpytxam

A7=22Cn A7=5Cn A7=6Cn

A5–=52Cn

D

A5–=5Cn

D

A5–=7Cn

D

tinU

Electrical Connection

D1 D1 D2 D2

S1 G1 S2 G2

(Top view)

Switching Time Test Circuit Switching Time Test Circuit

[N-channel] [P-channel]

10V

0V

PW=10µs D.C.≤1%

P.G

V

IN

V

IN

G

50Ω

VDD=15V

D

ID=4A RL=3.75Ω

FW313

V

OUT

0V

--10V

PW=10µs D.C.≤1%

P.G

V

IN

V

IN

G

50Ω

S

VDD=--15V

D

ID=--3A RL=5Ω

S

FW313

V

OUT

No.6389-2/6

I

8

8.0V

7

6

–A

D

Drain Current, I

100

(on) – mΩ

DS

Static Drain-to-Source

On-State Resistance, R

10.0V

5

4

3

2

1

0

90

80

70

60

50

40

30

20

10

0

01234 56

0.2

Drain-to-Source Voltage, VDS–V

ID=4A

D

6.0V

4.0V

3.5V

3.0V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

RDS(on) -- V

7A

Gate-to-Source Voltage, V

yfs -- I

Ta=--25°C

75°C

0.1

Drain Current, ID–A

SW Time -- I

Drain Current, ID–A

fs|– S

y

Forward Transfer Admittance, |

1000

Switching Time, SW Time – ns

100

7 5

3 2

10

7 5

3 2

1.0 7 5

3 2

0.1

23 57 23 57 23 57 23 57

0.01

VDD=15V

7 5

VGS=10V

3 2

7 5

3 2

10

7 5

3 2

1.0

0.1

2 3 57 2 3 57

-- V

1.0

td(off)

t

f

1.0

DS

td(on)

VGS=2.0V

GS

Ta=25°C

78910

–V

GS

D

VDS=10V

25°C

D

t

r

FW313

[Nch] [Nch]

2.5V

IT00900

[Nch] [Nch]

10

VDS=10V

9 8

7

–A

D

6

5

4

3

Drain Current, I

2

1 0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

70

60

50

Gate-to-Source Voltage, VGS–V

(on) – mΩ

40

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

- -60

--40 --20 0 20 40 60 80 100 120 140 160

IT00902

[Nch] [Nch]

10010

IT00904

[Nch] [Nch]

10

IT00906

10

V

7

GS

5 3

2

–A

1.0

F

7 5

3 2

0.1 7

Forward Current, I

5 3

2

0.01 0 0.2 0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

10000

7 5

3 2

1000

7 5

3 2

100

7

Ciss, Coss, Crss – pF

5 3

2

10

0 5 10 15 20 25 30

Ambient Temperature, Ta – ˚C

= 0

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss -- V

Drain-to-Source Voltage, VDS–V

I

-- V

D

GS

RDS(on) -- Ta

=4V

GS

=4A, V

I

D

=10V

GS

=7A, V

I

D

I

-- V

F

SD

°C

25°C

Ta=75

Ciss Coss Crss

25°C

Ta=75°C

--25°C

IT00901

IT00903

--25°C

IT00905

DS

f=1MHz

IT00907

No.6389-3/6

10

VDS=10V

9

ID=7A

V

8

GS –

7

6

5

4 3

2

Gate-to-Source Voltage, V

1 0

0

Total Gate Charge, Qg – nC

--6

--8.0V

--5

--4

–A

D

--3

--2

--10.0V

--6.0V

Drain Current, I

--1

0

--0.2

Drain-to-Source Voltage, VDS–V

200

180

160

140

(on) – mΩ

120

DS

100

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

0 --1 --2 --3 --4 --5 --6

100

7 5

3 2

fs|– S

10

y

7 5

3 2

1.0 7 5

3 2

0.1 7 5

3 2

Forward Transfer Admittance, |

0.01 23 57 23 57 23 57 23 57

--0.01

RDS(on) -- V

ID=--2A

Gate-to-Source Voltage, V

Ta=--25

75°C

--0.1

Drain Current, ID–A

VGS -- Qg

I

-- V

D

DS

--4.0V

--3.0V

VGS=--2.0V

--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

GS

--5A

--7 --8 --9 --10

–V

GS

yfs -- I

°C

D

VDS=--10V

--1.0

FW313

100

7 5

I

=28A

DP

3 2

10

I

=7A

D

7 5

–A

3

D

2

,I

1.0 7 5

Operation in this

3

area is limited by RDS(on).

2

Drain Current

0.1 7

Ta=25°C

5

Single pulse

3

1 unit

2

Mounted on a ceramic board (1000mm2×0.8mm)

2515 20510

IT00908

[Pch] [Pch]

--2.5V

IT00910

[Pch] [Pch]

Ta=25°C

IT00912

[Pch] [Pch]

25°C

--100--10

IT00914

0.01

–A

D

Drain Current, I

23 57 23 57 23 57

0.1

--10

--9

--8

--7

--6

--5

--4

--3

--2

--1 0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0

Drain-to-Source Voltage, VDS–V

VDS=--10V

Gate-to-Source Voltage, VGS–V

140

120

100

(on) – mΩ

80

DS

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--40 --20 0 20 40 60 80 100 120 140 160

- -60

--10 7

V

GS

5 3

2

--1.0

–A

7

F

5 3

2

--0.1 7 5

Forward Current, I

3 2

--0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4

Ambient Temperature, Ta – ˚C

= 0

Diode Forward Voltage, VSD–V

A S O

1ms

10ms

100ms

DC operation

1.0 10 100

I

-- V

D

GS

°C

Ta=75

25°C

--25°C

RDS(on) -- Ta

=- -4V

GS

=- -2A, V

I

D

=- -10V

GS

=- -5A, V

I

D

I

-- V

F

SD

25°C

--25°C

Ta=75°C

[Nch][Nch]

10µs

µs

100

IT00909

IT00911

IT00913

IT00915

No.6389-4/6

1000

7 5

3 2

100

td(off)

7 5

3

Switching Time, SW Time – ns

2

10

--0 .1

--1 0

--9

V

–

--8

GS

--7

--6

--5

--4

--3

--2

Gate-to-Source Voltage, V

--1 0

2.0

–W

1.8

D

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation (FET1), P

23 57 23 57

VDS=--10V ID=--5A

0

PD(FET 1) -- PD(FET 2)

Mounted on a ceramic board (1000mm

000.2 0.4

Allowable Power Dissipation (FET2), PD–W

SW Time -- I

t

f

td(on)

Drain Current, ID–A

--1 .0

VGS -- Qg

Total Gate Charge, Qg – nC

0.8 1.0 1.2

0.6

D

VDD=--15V VGS=--10V

t

r

[Nch, Pch]

2

×0.8mm) 1 unit

1.4 2.01.81.6

FW313

[Pch] [Pch]

--10

IT00916

[Pch] [Pch]

2515 20510

IT00918

10000

7 5

3 2

1000

7 5

3 2

100

7

Ciss, Coss, Crss – pF

5 3

2

10

0

--100 7 5

3

I

2

--1 0

I

7

D

–A

5

D

3

,I

2

--1 .0 7 5

3 2

Drain Current

--0 .1 7

Ta=25°C

5

Single pulse

3

1 unit

2

Mounted on a ceramic board (1000mm2×0.8mm)

--0.01

--0 .1

2.5

–W

2.0

D

1.7

1.5

1.0

0.5

Allowable Power Dissipation, P

Mounted on a ceramic board (1200mm2×0.8mm)

IT00921

0020 40 60

Ciss, Coss, Crss -- V

DS

Ciss Coss Crss

--5

--10 --15

--20 --30--25

Drain-to-Source Voltage, VDS–V

A S O

=--20A

DP

=--5A

10ms

100ms

DC operation

Operation in this area is limited by RDS(on).

23 57 23 57 23 57

--1.0 --10 --100

Drain-to-Source Voltage, VDS–V

P

-- Ta

D

Total Dissipation

1 unit

Ambient Temperature, Ta – ˚C

80 100 120

1ms

100µs

[Nch, Pch]

f=1MHz

IT00917

IT00919

140 160

IT00920

No.6389-5/6

FW313

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.

PS No.6389-6/6