Datasheet FW307 Datasheet (SANYO)

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Page 1

Ordering number : ENN7274

Preliminary

FW307

N-Channel and P-Channel Silicon MOSFETs

FW307

Ultrahigh-Speed Switching Applications

Features

•

The FW307 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.

•

Excellent ON-resistance characteristic.

Specifications

Package Dimensions

unit : mm

2129

[FW307]

4.4

5.0

1.8max

1.5

0.595

1.27

0.43

0.1

0.3

6.0

1 : Source1 2 : Gate1 3 : Source2 4 : Gate2

0.2

5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1

SANYO : SOP8

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Total Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C

DSS GSS

D T

PW≤10µs, duty cycle≤1% 5 --3 A Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm)

Ratings

N-channel P-channel

250 --250 V ±30 ±30 V

1 --0.7 A

1.7 W

2.0 W

Unit

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

[N-channel] Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Gate-to-Source Leakage Current I

(BR)DSSID

DSS DSS GSS GSS

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max

=1mA, VGS=0 250 V VDS=250V, VGS=0 100 µA VDS=15V, VGS=0, Ta=0 to 60°C4µA VGS=±25V, VDS=0 ±10 µA VGS=±15V, VDS=0, Ta=0 to 60°C ±1.2 µA

Continued on next page.

83002 TS IM TA-1265

GI IM

Unit

No.7274-1/5

Page 2

FW307

Continued from preceding page.

Parameter Symbol Conditions

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.5 V Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 1.2 1.6 Ω Input Capacitance Ciss VDS=20V , f=1MHz 160 pF Output Capacitance Coss VDS=20V , f=1MHz 40 pF Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 80 ns Fall Time t Diode Forward Voltage V [P-channel] Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.5 --2.5 V Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on) ID=--0.7A, VGS=--10V 3 4 Ω Input Capacitance Ciss VDS=--20V, f=1MHz 160 pF Output Capacitance Coss VDS=--20V, f=1MHz 45 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 20 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 90 ns Fall Time t Diode Forward Voltage V

yfs



(BR)DSSID

DSS DSS GSS GSS

yfs



VDS=10V , ID=1A 1.4 2.1 S

See specified Test Circuit. 15 ns

See specified Test Circuit. 30 ns IS=1A, VGS=0 1.0 1.2 V

=--1mA, VGS=0 --250 V VDS=--250V, VGS=0 --100 µA VDS=15V, VGS=0, Ta=0 to 60°C--4µA VGS=±25V, VDS=0 ±10 µA VGS=±15V, VDS=0, Ta=0 to 60°C ±1.2 µA

VDS=--10V, ID=--0.7A 0.7 1.1 S

See specified Test Circuit. 15 ns

See specified Test Circuit. 40 ns IS=--1A, VGS=0 --1.0 --1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit

[N-channel] [P-channel]

50Ω

VDD=100V

ID=1A RL=100Ω

FW307

OUT

--10V

PW=10µs D.C.≤1%

P.G

10V

PW=10µs D.C.≤1%

P.G

Electrical Connection

8 7 6 5

1 2 3 4

1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1

(Top view)

50Ω

VDD= --100V

ID= --0.7A RL=142Ω

OUT

FW307

No.7274-2/5

Page 3

2.0

1.8

1.6

1.4

-- A D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2 0

1.0

ID -- V

10V

2.0

3.0 4.0 5.00.5 1.5 2.5 3.5 4.5

Drain-to-Source V oltage, VDS -- V

2.0

VDS=10V

1.8

1.6

1.4

-- A D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2 0

0 0.5 1.0 1.5 2.0 2.5 4.03.0 3.5

ID -- V

Gate-to-Source V oltage, VGS -- V

4.0

3.5

RDS(on) -- V

VGS=3V

25°C

Ta=75°C

[Nch]

IT04459

[Nch]

--25°C

IT04461

[Nch]

Ta=25°C ID=1A

FW307

--2.0

--1.8

--1.6

--1.4

-- A D

--1.2

--1.0

--0.8

--0.6

Drain Current, I

--0.4

--0.2 0

--2.0

VDS= --10V

--1.8

--1.6

--1.4

-- A D

--1.2

--1.0

--0.8

--0.6

Drain Current, I

--0.4

--0.2 0

-- V

10V

--2

--4 --6 --8 --10--1 --3 --5 -- 7 --9

Drain-to-Source V oltage, VDS -- V

-- V

Ta=75°C

°C

--2

--1.0

25°C

--2.0 --3.0 --4.0 --5.0--0.5 --1.5 --2.5 --3.5 --4.5

Gate-to-Source V oltage, VGS -- V

RDS(on) -- V

Ta= --25°C

Ta=25 ID= --0.7A

IT04460

°C

IT04462

[Pch]

°C

3.0

(on) -- Ω

2.5

2.0

1.5

1.0

0.5

Static Drain-to-Source

On-State Resistance, R

002468

Gate-to-Source V oltage, VGS -- V

3.0

RDS(on) -- Ta

10 12

14 16 18 20

IT04463

[Nch]

ID=1A VGS=10V

2.5

(on) -- Ω

2.0

1.5

1.0

0.5

Static Drain-to-Source

On-State Resistance, R

--60 60 80--40 --20 0 20 40 100 120 140 --60 60 80--40 --20 0 20 40 100 120 140

Ambient Temperature, Ta -- °C Ambient Temperature, Ta -- °C

IT04465

(on) -- Ω

Static Drain-to-Source

On-State Resistance, R

00--2 --4 --61--82--10

Gate-to-Source V oltage, VGS -- V

(on) -- Ω

Static Drain-to-Source

On-State Resistance, R

--12

RDS(on) -- Ta

--14 --16 --18 --20

ID= --0.7A VGS= --10V

IT04464

[Pch]

IT04466

No.7274-3/5

Page 4

fs -- S

1.0 7

Forward Transfer Admittance, 

0.1

23 57

0.01 0.1

3 2

fs -- I



25°C

°C

Ta= --2

75°C

Drain Current, I

-- V

[Nch]

VDS=10V

23 57 2

-- A

1.0

IT04467

[Nch]

VGS=0

FW307

fs -- S

Forward Transfer Admittance, 

1.0

0.1

7 5

--0.1

3 2

fs -- I



[Pch]

VDS= --10V

25°C

Ta= --25°C

75°C

327532

IT04468

[Pch]

Drain Current, I

-- V

= 0

--1.0

-- A

1.0 7 5

-- A F

3 2

0.1 7 5

Forward Current, I

3 2

0.01

3 2

100

7 5

3 2

Switching Time, SW Time -- ns

0.1

1000

7 5

3 2

Ta=75°C

25°C

--25°C

0.60.50.4 0.80.7 0.9 1.0

Diode Forward V oltage, V

SW Time -- I

-- V

IT04469

[Nch]

VDD=100V VGS=10V

(off)

td(on)

23 57 32

Drain Current, I

Ciss, Coss, Crss -- V

1.0

-- A

IT04471

[Nch]

f=1MHz

Ciss

--1.0 7 5

-- A F

3 2

--0.1 7 5

Forward Current, I

3 2

--0.01

--0.4 --0.6 --0.8 --1.0 --1.2

Diode Forward V oltage, V

3 2

100

7 5

3 2

7 5

Switching Time, SW Time -- ns

1.0

--0.1

1000

7 5

3 2

Ciss, Coss, Crss -- V

25°C

Ta=75°C

--25°C

SW Time -- I

-- V

VDD= --100V

(off)

VGS= --10V

td(on)

23 57

Drain Current, I

-- A

Ciss

IT04470

[Pch]

--1.0

IT04472

[Pch]

f=1MHz

100

7 5

Ciss, Coss, Crss -- pF

3 2

0 5 10 15 20 25 30

Drain-to-Source V oltage, V

Coss

Crss

-- V

IT04473

Ciss, Coss, Crss -- pF

100

7 5

3 2

--5

Drain-to-Source V oltage, V

Coss

Crss

--10 --15

--20 --30--25

-- V

IT04474

No.7274-4/5

Page 5

=5A

5 3

=1A

1.0 7 5

-- A

0.1 7 5

Operation in this area

is limited by RDS(on).

Drain Current, I

0.01 7 5

Ta=25°C

Single pulse

Mounted on a ceramic board (1200mm2✕0.8mm)1unit

0.001 23 57 23 571023

0.1

1.0

A S O

100ms

DC operation

23 57

Drain-to-Source V oltage, V

-- Ta

2.5

-- W

2.0

1.7

1.5

1.0

0.5

Mounted on a ceramic board (1200mm

Total Dissipation

1unit

Allowable Power Dissipation, P

0 20 40 60 100 120 140

Ambient Temperature, Ta -- °C

10ms

1ms

100

-- V

[Nch]

≤10µs

100µs

IT04475

[Nch, Pch]

✕0.8mm)

IT04477

FW307

160

--10 7 5

IDP= --3A

3 2

--1.0

ID= --0.7A

7 5

-- A

--0.1 7 5

Operation in this area

is limited by RDS(on).

Drain Current, I

--0.01 7 5

Ta=25°C

Single pulse

Mounted on a ceramic board (1200mm2✕0.8mm)1unit

--0.001 23 57 5

--0.1 --1.0

A S O

23 57

DC operation

23 2357

--10

Drain-to-Source V oltage, V

2.0

1.8

-- W

1.7

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation (FET1), P

PD(FET1) -- PD(FET2)

Mounted on a ceramic board (1200mm

0 0.2 0.4 0.6 0.8 1.4 1.6 1.8

1.0 1.2

Allowable Power Dissipation (FET2), PD -- W

100ms

1ms

10ms

--100

-- V

[Pch]

≤10µs

100µs

IT04476

[Nch, Pch]

✕0.8mm)

IT04478

2.0

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice.

No.7274-5/5