Datasheet FW233 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6391

FW233

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

58

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D
T

Package Dimensions

unit:mm

2129

[FW233]

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)

0.43

0.1

6.0

1 : Source1
2 : Gate1

0.2

3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8

03V
02±V
8A

7.1W

0.2W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(IDV,A8=

2)no(IDV,A4=

I

V,Am1=

D

V

SD

V

SG

0=03V

SG

V,V03=

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A8=8.941S

D

V01=6112mΩ

SG

V4=4243mΩ

SG

nimpytxam

Marking : W233 Continued on next page.

60100TS (KOTO) TA-2661 No.6391-1/4

sgnitaR

tinU

FW233

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

V,A8=

S

Electrical Connection Switching Time Test Circuit

D1 D1 D2 D2

zHM1=f,V01=0551Fp
zHM1=f,V01=053Fp
zHM1=f,V01=022Fp

tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS012sn
tiucriCtseTdeificepseeS011sn
tiucriCtseTdeificepseeS59sn

I,V01=

SG
SG
SG

0=28.02.1V

SG

A8=04Cn

D

I,V01=

A8=5Cn

D

I,V01=

A8=7Cn

D

V

in

10V

0V

V

in

PW=10µs
D.C.≤1%

G

VDD=15V

D

sgnitaR

nimpytxam

ID=8A
RL=1.87W

V

OUT

tinU

S1 G1 S2 G2

15

10.0V

12

I

3.5V

D

3.0V

(Top view)

-- V

DS

6.0V

–A

D

9

6

4.0V

Drain Current, I

3

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

60

50

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

GS

–mΩ

40

(on)

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

8A

ID=4A

240 6 12 14 16 18 20108

Gate-to-Source Voltage, V

GS

2.5V

VGS=2.0V

Ta=25°C

–V

IT00721

IT00723

P.G

16

14

12

–A

10

D

8

6

Drain Current, I

4

2

0

0

40

35

30

–mΩ

25

(on)

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

50W

Gate-to-Source Voltage, VGS–V

--40 --20--60

Ambient Temperature, Ta – ˚C

S

I

-- V

D

1.51.00.5 2.5 3.0

RDS(on) -- Ta

=4A, V

I

D

=8A, V

I

D

0

FW233

GS

=4V

GS

GS

Ta=75°C

2.0

=10V

VDS=10V

25°C

--25°C

IT00722

160120 1401008040 6020

IT00724

No.6391-2/4

100

7
5

3
2

fs|–S

10

y

7
5

3
2

1.0
7
5

3
2

0.1
7
5

3
2

Forward Transfer Admittance, |

0.01
23 57

0.001 0.01

10000

7
5

3
2

1000

7
5

Ciss, Coss, Crss – pF

3
2

100

0

1000

VDD=15V

7
5

VGS=10V

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0

0.1 1.0 10

2.0

Ciss, Coss, Crss -- V

Drain-to-Source Voltage, VDS–V

t

r

2 3 57 2 3 57 2 3

yfs -- I

75°C

23 57

0.1

Drain Current, ID–A

Ciss

Coss

Crss

SW Time -- I

td(off)

t

f

Drain Current, ID–A

P

D

D

Ta=--25°C

25°C

23 571023 57

1.0

td(on)

-- Ta

FW233

I

-- V

F

°C

A S O

SD

<10µs

1m

s

10ms

100ms

DC operation

23 571023 57

1.0

100µs

VGS=0

IT00726

IT00728

IT00730

100

100

VDS=10V

23 57

100

IT00725

DS

f=1MHz

255101520 30

IT00727

D

IT00729

7
5

3
2

10

7
5

3

–A

2

F

1.0
7
5
3
2

0.1
7
5

3

Forward Current, I

0.01

0.001

2
7

5
3
2

Ta=75

0.3 0.6 1.20.4

°C

25°C

--25

0.5 0.7 0.8 0.9 1.0 1.10.2

Diode Forward Voltage, VSD–V

10

VDS=10V

9

ID=8A

V

8
7

GS –

6

5

4
3

2

Gate-to-Source Voltage, V

1
0

5253035402015100

100

IDP=52A

7
5

3
2

ID=8A

10

7
5

–A

3

D

2

,I

1.0
7

Operation in this

5

area is limited by RDS(on).

3
2

Drain Current

0.1
7

Ta=25°C

5

Single pulse

3

1 unit

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01
23 57

0.01 0.1

Drain-to-Source Voltage, VDS–V

VGS -- Qg

Total Gate Charge, Qg – nC

23 57

1.7

–W

D

1.5

1.0

0.5

Total Dissipation

1 unit

Allowable Power Dissipation, P

Mounted on a ceramic board (1000mm2×0.8mm)

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT00731

No.6391-3/4

FW233

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.

PS No.6391-4/4