Datasheet FW213 Datasheet (SANYO)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

DC-DC Converter Applications

Ordering number:EN5908

FW213

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

D

R
R

Package Dimensions

unit:mm

2129

[FW213]

58

0.3

4.4

14

5.0

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

V,Am1=

0=03V

SG

V,V03=

0=001Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A5=701S

D

V01=5223mΩ

SG

V4=7305mΩ

SG

zHM1=f,V01=007Fp
zHM1=f,V01=083Fp
zHM1=f,V01=081Fp

SSD
SSG

)ffo(SG

1IDV,A5=

)no(SD

2IDV,A5=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

0.43

2

×0.8mm)

1.8max

1.5

0.1

nimpytxam

6.0

0.2

sgnitaR

Continued on next page.

1:Source1
2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1

SANYO:SOP8

03V
02±V
7A

7.1W

0.2W

˚C
˚C

tinU

D1498TS (KOTO) TA-1283 No.5908-1/4

FW213

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5Cn

egrahC"relliM"niarD-ot-etaGdgQ 6Cn

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

V

I

DS

S

V,V01=

SD

SG

V,A5=

0=0.12.1V

SG

Switching Time Test Circuit

tiucriCtseTdeificepSeeS51sn
tiucriCtseTdeificepSeeS081sn
tiucriCtseTdeificepSeeS09sn
tiucriCtseTdeificepSeeS08sn

I,V01=

D

sgnitaR

nimpytxam

22Cn

A5=

tinU

V

IN

10V

0V

PW=10µs

≤

D.C.

P.G

8

6V

8V

10V

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

–A

D

Drain Current, I

7

6

5

4

3

2

1

0

1%

4V

3.5V

V

IN

ID-

3V

G

50

VDD=10V

ID=5A
RL=2

D

Ω

V

S

DS

Drain-to-Source Voltage,VDS–V

y

|

fs

|-I

Ta=

-

D

25˚C

1.0

D

75˚C

23 2357

–A

100

7
5

–S

|

3

fs

y

2

|

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance,

0.1

0.01

23 57

0.1

23 57

Drain Current, I

Ω

V

OUT

FW213

2.5V

VGS=2V

VDS=10V

25˚C

10

10

VDS=10V

9
8

7

–A

D

6
5
4
3

Drain Current, I

2
1
0

0 0.5 1.0 1.5 2.0 2.5 3.0

ID-

V

GS

Gate-to-Source Voltage, V

60

50

–mΩ

)

on

40

DS (

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

Gate-to-Source Voltage, V

R

DS

(on)

-

V

GS

GS

GS

I

D

–V

=5A

–V

25˚C

75˚C

Ta=

Tc=25˚C

25˚C

-

No.5908-2/4

R

100

90
80

–mΩ

)

70

on

60

DS (

50
40
30
20
10

Static Drain-to-Source

On-State Resistance, R

0

-60 -40 -20 0 20 40 60 80 100 120 140

DS

I

D

(on)

=5A,V

=5A,V

I

D

-

Tc

=4V

GS

=10V

GS

Case Temperature, Tc – ˚C

10000

7
5

3
2

1000

7
5

3
2

100

7

Ciss,Coss,Crss – pF

5
3

2

10

0 5 10 15 20 25 30

Ciss,Coss,Crss

Drain-to-Source Voltage,V

SW Time – I

1.0

Switching Time, SW Time – ns

1000

100

VDD=15V

7

V

5
3

2

7
5

3
2

10

0.1

=10V

GS

23 57

-

DS

D

t

d(off)

t

f

22357

Drain Current, ID–A

P

(FET2)

2.0

1.8

1.6

(FET2) – W

1.4

D

1.2

1.0

0.8

0.6

0.4

0.2
0

Allowable Power Dissipation, P

0 0.2

D

Mounted on a ceramic board (1000mm

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

-

P

(FET1)

D

Allowable Power Dissipation, PD (FET1) – W

V

DS

–V

2

×

0.8mm)

t

d(on)

r

t

f=1MHz

FW213

Ciss

Coss

Crss

10

I

-

V

10

VGS=0

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

F

Diode Forward Voltage, V

10

VDS=10V
I

=5A

D

9
8

–V

7

GS

6
5

4
3
2

Gate-to-Source Voltage, V

1
0

0 5 10 15 20 25

VGS-

SD

Ta=75˚C

Qg

25˚C

SD

25˚C

-

–V

Total Gate Charge, Qg – nC

100

IDP=52A

7
5

3
2

10

–A

D

1.0

Drain Current, I

0.1

ID=7A

7
5

3
2

7
5

Operation in this area

3

is limited by R

2

Ta=25˚C
1pulse
1unit

Mounted on a ceramic board (1000mm2×

3

235577

Drain-to-Source Voltage, V

2.5

– W

2.0

D

1.7

1.5

1.0

0.5

Allowable Power Dissipation, P

Mounted on a ceramic board( 1000mm2×0.8mm)

0

020

40 60 80 100 120 140 160

A S O

10m

s

100ms

DC operation

(on).

DS

23 57 23 5

1.0 10

PD-

Total Dissipation

1 unit

0.8mm)

DS

Ta

1ms

–V

Ambient Temperature, Ta – ˚C

100

µs

No.5908-3/4

FW213

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of December, 1998. Specifications and information herein are subject
to change without notice.

PS No.5908-4/4