Datasheet FW211 Datasheet (SANYO)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N-Channel Silicon MOSFET

DC-DC Converter Applications

Ordering number:EN5579A

FW211

Features

· Low ON resistance.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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)CD(tnerruCniarDI

)eslup(tnerruCniarDI

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noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D
T

Package Dimensions

unit:mm

2129

[FW211]

58

4.4

14

1.27

0.595

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)

5.0

0.43

1.8max

1.5

0.1

0.3

6.0

1:Source 1
2:Gate 1
3:Source 2

0.2

4:Gate 2
5:Drain 2
6:Drain 2
7:Drain 1
8:Drain 1

SANYO:SOP8

02V
01±V
6A
25A

7.1W

0.2W

˚C
˚C

Electrical Characteristics at Ta=25˚C

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ecnatsiseRetatS-NOecruoS-ot-niarDcitatS

R
R

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SSD
SSG

r

f

DS

SSD)RB(

)ffo(SG

1IDV,A5=

)no(SD

2IDV,A2=

)no(SD

)no(d

)ffo(d

I
V
V
V

V

I

V,Am1=

D

SD
SG
SD

SD
SD
SD

SD

S

0=02V

SG

V,V02=

0=001Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A5=951S

D

V4=7253mΩ

SG

V5.2=5384mΩ

SG

zHM1=f,V01=057Fp
zHM1=f,V01=025Fp
zHM1=f,V01=003Fp

tiucriCtseTdeificepSeeS02sn
tiucriCtseTdeificepSeeS002sn
tiucriCtseTdeificepSeeS051sn
tiucriCtseTdeificepSeeS051sn

V,V01=

V,A5=

SG

I,V01=

SG

D

0=0.12.1V

sgnitaR

nimpytxam

03Cn

A1=

tinU

61598TS (KOTO) TA-0861 No.5579-1/3

Switching Time Test Circuit

V

4V
0V

PW=10µs
D.C.≤1%

IN

V

VDD=10V

ID=5A

IN

G

RL=2Ω

D

V

FW211

OUT

–A

D

Drain Current, I

100

–S

fs |

y

|

10

1.0

8

7

6

5

4

3

2

1

0

0 0.1

7
5

3
2

7
5

3
2

7

P.G

8V

6V

4V

3V

2.5V

50Ω

ID-

2V

FW211

S

V

DS

1.5V

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage,VDS–V

|yfs|

Ta=

25˚C

-

-

75˚C

I

D

25˚C

VGS=1V

VDS=10V

10

–A

D

Drain Current, I

60

50

–mΩ

)

on

40

DS (

30

20

VDS=10V

9
8
7
6
5
4
3
2
1

0

0 0.2

ID-

V

GS

75˚C

25˚C

-

Ta=

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Gate-to-Source Voltage, V

R

(on)

DS

-

–V

GS

V

GS

Tc=25˚C

ID=5A

2A

25˚C

Forward Transfer Admittance,

0.1
2233557

0.01

0.1

Drain Current, ID–A

80

70

–mΩ

60

)

on

50

DS (

40

30

20

10

Static Drain-to-Source

ON-State Resistance, R

0

-60 -40

-20 0 20 40 60 80 100 120 140

Case Temperature, Tc – ˚C

2357

R

(on)

DS

I

D

I

D

23 57102357

1.0

-

Tc

=2.5V

GS

=2A,V

=4V

GS

=5A,V

Static Drain-to-Source

100

10

ON-State Resistance, R

0

01

10

VGS=0

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

2345678910

Gate-to-Source Voltage, V

IF-

V

Ta=75˚C

Diode Forward Voltage, V

SD

25˚C

GS

SD

25˚C

-

–V

–V

No.5579-2/3

FW211

,,,,,,,

,,,,,,,

,,,,,,,

10000

7
5

3
2

1000

7
5

Ciss,Coss,Crss – pF

3
2

100

02468101214161820

Ciss,Coss,Crss

-

V

DS

f=1MHz

Ciss

Coss

Crss

10

9
8

–V

GS

7
6
5
4
3
2

Gate-to-Source Voltage, V

1
0

VDS=10V

VGS-

=1A

I

D

0

5 1015202530

Qg

Drain-to-Source Voltage,VDS– V Total Gate Charge, Qg – nC

1000

Switching Time, SW Time – ns

100

7
5

3
2

7
5

3
2

10

0.1

SW Time

23 577

Drain Current, ID–A

P

(FET2)

2.0

1.8

1.6

(FET2) – W

1.4

D

1.2

1.0

0.8

0.6

0.4

0.2

Allowable Power Disipation, P

0

0 0.2

D

Mounted ceramic board (1000mm

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Allowable Power Disipation, PD (FET1) – W

-

I

D

23 57102

1.0

-

P

(FET1)

D

2

t

t

d(off)

t

×0.8mm)

VDD=10V

=4V

V

GS

r

f

t

d(on)

100

7

IDP=52A

5
3

2

10

ID=6A

–A

7

D

5
3

2

1.0

Operation in this
area is limited

7

(on).

by R

DS

5

Drain Current, I

Ta=25˚C

2

1pulse

0.1

1unit

7

Mounted ceramic board (1000mm2×0.8mm)

5

233

7

5

A S O

DC operation

1.0

23 2357

Drain-to-Source Voltage, VDS–V

2.5

– W

2.0

D

1.7

1.5

1.0

0.5

PD-

Total Dissipation

1 unit

Allowable Power Disipation, P

Mounted ceramic board (1000mm2×0.8mm)

0

020

40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

100ms

Ta

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.

Anyone purchasing any products described or contained herein for an above-mentioned use shall:

Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant­eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.

10ms

1ms

10

10µs

100

µs

This catalog provides information as of June, 1998. Specifications and information herein are subject to
change without notice.

PS No.5579-3/3