Page 1
Ordering number : ENN6784
FW133
P-Channel Silicon MOSFET
FW133
Load Switching Applications
Features
•
4V drive.
• Low ON-resistance.
Package Dimensions
unit : mm
2129
[FW133]
58
0.3
4.4
6.0
1 : Source1
14
5.0
1.8max
1.5
0.2
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Specifications
0.595
1.27
0.43
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
PW≤10µs, duty cycle≤1% --32 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
Mounted on a ceramic board (1000mm2✕0.8mm)
--30 V
±20 V
--7 A
1.7 W
2.0 W
Electrical Characteristics at T a=25 °C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--7A 8.4 12 S
Marking : W133 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1500 TS IM TA-2298
No.6784-1/4
Page 2
FW133
Continued from preceding page.
Parameter Symbol Conditions
RDS(on)1 ID=--7A, VGS=--10V 24 32 mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 1700 pF
Output Capacitance Coss VDS=--10V, f=1MHz 380 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 240 pF
Turn-ON Delay Time td(on) See specified Test Circuit 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 85 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--7A 32 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--7A 4.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--7A 5 nC
Diode Forward Voltage V
RDS(on)2 ID=--4A, VGS=--4.5V 36 51 mΩ
RDS(on)3 ID=--4A, VGS=--4V 40 56 mΩ
See specified Test Circuit 150 ns
r
See specified Test Circuit 90 ns
f
SD
IS=--7A, VGS=0 --1.0 --1.5 V
min typ max
Switching Time Test Circuit
VDD= --15V
V
IN
0V
--10V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --7A
RL=2.1Ω
V
OUT
Ratings
Unit
P.G
--10
--6.0V
--4.5V
--8
-- A
D
--6
--4
--10.0V
I
D
--4.0V
50Ω
-- V
--3.0V
DS
S
V
GS
Drain Current, I
--2
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source V oltage, V
DS
-- V
FW133
= --2.5V
IT02582
--12
VDS= --10V
--10
--8
-- A
D
--6
--4
Drain Current, I
--2
0
0
I
-- V
D
GS
Gate-to-Source V oltage, V
Ta=75°C
25°C
--25°C
--3.0
--2.5--1.5 --2.0--1.0--0.5 --3.5
GS
-- V
IT02583
No.6784-2/4
Page 3
-- mΩ
(on)
DS
80
70
60
50
40
30
20
ID= --4A
RDS(on) -- V
--7A
GS
Ta=25°C
FW133
-- mΩ
(on)
DS
80
70
60
50
40
30
20
RDS(on) -- Ta
= --4.0V
GS
= --4A, V
I
D
I
D
I
D
= --4A, V
= --7A, V
= --4.5V
GS
GS
= --10.0V
Static Drain-to-Source
On-State Resistance, R
10
0
--2 --4--0 --6 --20--14 --16 --18--12--10--8
Gate-to-Source V oltage, V
yfs -- I
Ta= --25°C
75°C
-- S
fs
y
3
2
10
7
5
3
2
1.0
7
5
3
2
Forward Transfer Admittance,
0.1
2357 23
--0.01
--0.1
2357
Drain Current, I
Ciss, Coss, Crss -- V
Ciss
-- pF
1000
5
3
2
7
5
Coss
3
Ciss, Coss, Crss
2
100
0
Crss
Drain-to-Source V oltage, VDS -- V
1000
7
5
3
2
-- ns
100
7
5
3
2
10
7
5
Switching Time, SW Time
3
2
1.0
23 57 23 57 23
--0.1 --1.0 --10
SW Time -- I
t
(off)
d
t
f
t
r
td(on)
Drain Current, I
D
25°C
--1.0
D
D
-- V
GS
2357
-- A
DS
D
VDD= --15V
VGS= --10V
-- A
10
Static Drain-to-Source
On-State Resistance, R
0
--40 --20--60
IT02584 IT02585
3
VDS= --10V
--10
IT02586
f=1MHz
--25--5 --10 --15 --20 --30
IT02588 IT02589
IT02590 IT02591
2
--10
7
5
3
2
-- A
--1.0
7
F
5
3
2
--0.1
7
5
3
2
Forward Current, I
--0.01
7
5
3
2
--0.001
-- V
GS
Gate-to-Source V oltage, V
--100
--10
-- A
D
--1.0
Drain Current, I
--0.1
--0.01
--0.3 --0.6 --1.0--0.4
--10
VDS= --10V
--9
ID= --7A
--8
--7
--6
--5
--4
--3
--2
--1
0
7
5
IDP= --32A
3
2
ID= --7A
7
5
3
2
7
5
Operation in this
3
2
area is limited by RDS(on).
Ta=25°C
7
5
Single pulse
3
1unit
2
Mounted on a ceramic board(1000mm
23 57 23 57 23 57 23 57
--0.01 --0.1 --1.0 --10 --100
0
Ambient Temperature, Ta -- °C
I
-- V
F
SD
25°C
Ta=75°C
--0.5 --0.7 --0.8 --0.9--0.2
--25°C
Diode Forward V oltage, VSD -- V
VGS -- Qg
15 3520 25 301050
Total Gate Charge, Qg -- nC
A S O
10ms
DC operation(Ta=25°C)
Drain-to-Source V oltage, V
100ms
2
✕0.8mm)
DS
VGS=0
<10µs
1ms
-- V
No.6784-3/4
1601401201008040 6020
IT02587
100µs
Page 4
FW133
P
-- Ta
2.5
-- W
2.0
D
1.7
1.5
D
Total
1.0
0.5
1 unit
Allowable Power Dissipation, P
Mounted on a ceramic board(1000mm2✕0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02592
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.
No.6784-4/4
PS
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