Page 1
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load S/W Applications
Ordering number:EN5909
FW111
Features
· 2.5V drive.
· Low ON resistance.
Package Dimensions
unit:mm
2129
[FW111]
58
0.3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
D
D
T
R
R
4.4
6.0
1:Source1
2:Gate1
14
5.0
1.27
0.595
0.43
1.8max
1.5
0.1
0.2
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1
SANYO:SOP8
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %123–A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm
SSD
SSG
)ffo(SG
1IDV,A5–=
)no(SD
2IDV,A2–=
)no(SD
I
SSD)RB(
D
V
V
V
V,Am1–=
0=02–V
SG
V,V02–=
SD
SG
SD
SD
SD
SD
0=001–Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01–=
Am1–=4.0–4.1–V
D
A5–=821S
D
V4–=4485mΩ
SG
V5.2–=5689mΩ
SG
zHM1=f,V01–=089Fp
zHM1=f,V01–=005Fp
zHM1=f,V01–=012Fp
2
×0.8mm)
sgnitaR
nimpytxam
Continued on next page.
02–V
01±V
5–A
7.1W
0.2W
˚C
˚C
tinU
D1498TS (KOTO) TA-1214 No.5909-1/4
Page 2
FW111
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 5Cn
egrahC"relliM"niarD-ot-etaGdgQ 7Cn
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
V
I
DS
S
V,V01–=
SD
V,A5–=
0=0.1–5.1–V
SG
Switching Time Test Circuit
VDD=–10V
ID=–5A
RL=2
D
Ω
V
OUT
0V
–4V
PW=10µs
D.C.
V
IN
V
IN
≤
1%
G
tiucriCtseTdeificepSeeS02sn
tiucriCtseTdeificepSeeS511sn
tiucriCtseTdeificepSeeS011sn
tiucriCtseTdeificepSeeS501sn
I,V01–=
SG
D
sgnitaR
nimpytxam
03Cn
A5–=
tinU
–A
D
P.G
-6
-6V
-5
-4
-3
-2
-4V
-8V
-3V
ID-
-2.5V
50
-2V
Ω
S
V
DS
Drain Current, I
-1
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Drain-to-Source Voltage,VDS–V
y
|
fs
|
-
I
Ta=
-
25˚C
75˚C
-1.0
D
23 257
100
VDS=-10V
7
5
–S
|
3
fs
2
y
|
10
7
5
3
2
1.0
7
5
3
2
Forward Transfer Admittance,
0.1
-0.01
23 57
-0.1
Drain Current, ID–A
23 57
FW111
VGS=-1.5V
25˚C
-10
-10
VDS=-10V
-9
-8
-7
–A
D
-6
-5
-4
-3
Drain Current, I
-2
-1
0
0 -0.5 -1.0 -1.5 -2.0 -2.5
ID-
Gate-to-Source Voltage, V
R
100
90
80
–mΩ
)
70
on
60
DS (
50
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
-2A
0-1-2-3-4-5-6-7-8-9-10
DS
ID=-5A
Gate-to-Source Voltage, V
(on)
25˚C
V
GS
75˚C
25˚C
-
Ta=
GS
-
V
GS
GS
–V
Ta=25˚C
–V
No.5909-2/4
Page 3
R
I
DS
D
140
120
–mΩ
100
)
on
80
DS (
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
-60 -40 -20 0 20 40 60 80 100 120 140
(on)
=-2A,V
=-5A,V
I
D
-
GS
GS
Tc
=-2.5V
=-4V
Case Temperature, Tc – ˚C
10000
7
5
3
2
1000
7
5
Ciss,Coss,Crss – pF
3
2
100
0-2-4 -10-8-6 -12 -14 -16 -18 -20
Ciss,Coss,Crss
Drain-to-Source Voltage,V
1000
7
5
3
2
100
7
5
3
Switching Time, SW Time – ns
2
10
23 57
-0.1
2.0
1.8
1.6
(FET2) – W
D
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
0
0 0.2
SW Time
t
t
f
-1.0
Drain Current, ID–A
P
(FET2)
D
Mounted on a ceramic board (1000mm
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-
-
-
I
D
d(off)
t
r
23 57
P
(FET1)
D
DS
Allowable Power Disipation, PD (FET1) – W
V
DS
–V
t
d(on)
2
×
0.8mm)
f=1MHz
Ciss
Coss
Crss
VDD=-10V
=-4V
V
GS
-10
FW111
2
I
-
V
-10
V
=0
GS
7
5
3
2
–A
-1.0
F
7
5
3
2
-0.1
7
5
Forward Current, I
3
2
-0.01
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
F
Ta=75˚C
Diode Forward Voltage, V
-10
VDS=-10V
I
=-5A
D
-9
-8
–V
-7
GS
-6
-5
-4
-3
-2
-1
Gate-to-Source Voltage, V
0
0 5 10 15 20 3025
VGS-
25˚C
SD
25˚C
-
Qg
SD
Total Gate Charge, Qg – nC
7
5
IDP=32A
3
2
-10
7
5
–A
3
D
2
-1.0
7
5
Drain Current, I
-0.1
-0.01
3
2
3
2
Operation in this area
is limited by R
Ta=25˚C
1pulse
1unit
Mounted on a ceramic board (1000mm
Drain-to-Source Voltage, V
2.5
2.0
–W
D
1.7
1.5
1.0
0.5
Allowable Power Dissipation, P
Mounted on a ceramic board (1000mm2×0.8mm)
0
020
40 60 80 100 120 140 160
A S O
ID=5A
(on).
DS
23557723 57
PD-
Total Dissipation
1 unit
100ms
DC operation
2
×
0.8mm)
23 57 23
-1.0-0.01 -0.1 -10
DS
Ta
Ambient Temperature, Ta – ˚C
–V
10ms
–V
100
µs
1ms
No.5909-3/4
Page 4
FW111
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 1998. Specifications and information herein are subject
to change without notice.
PS No.5909-4/4
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