Datasheet FT0409ME, FT0409DF, FT0409DE, FT0409BF, FT0409BE Datasheet (FAGOR)

On-State Current

4 Amp

FT04...E/F

LOGIC LEVEL TRIAC

Absolute Maximum Ratings, according to IEC publication No. 134

Gate Trigger Current

< 5 mA to < 10 mA

Off-State Voltage

200 V ÷ 600 V

Jul - 02

Repetitive Peak Off State

Voltage

PARAMETER CONDITIONS VOLTAGE UnitSYMBOL

V

DRM

V

RRM

R

GK

= 1 KΩ

B

200 V

D

400

M

600

TO202-1 (E)

MT1

MT2

G

MT2

TO202-3 (F)

MT1

MT2

G

MT2

RMS On-state Current

Non-repetitive On-State Current

Non-repetitive On-State Current

Fusing Current

Peak Gate Current

Peak Gate Dissipation

Gate Dissipation

Critical rate of rise of on-state current

Operating Temperature

Storage Temperature

Soldering Temperature

I

T(RMS)

PARAMETER CONDITIONS Min. Max. UnitSYMBOL

I

TSM

I

TSM

I2t
I

GM

P

GM

P

G(AV)

T

j

T

stg

T

sld

All Conduction Angle, Tc = 110 ºC

Half Cycle, 60 Hz

Half Cycle, 50 Hz

t

p

= 10 ms, Half Cycle

20 µs max.

20 µs max.

20 ms max.

1.6 mm from case, 10s max.

4

21

20

2.2

20

-40

-40

A

A

A

A

2

s

A

W

W

A/µs

ºC

ºC

ºC

1.2

2

0.2

+125

+150

260

di/dt

Tr ≤ 200 ns, F = 120 Hz

T

j

= 125 ºC

I

G

= 2 x I

GT

This series of TRIACs uses a hig h
performance PNPN technology.

These parts are intended for general
purpose AC switching applications with
highly inductive loads.

FT04...E/F

LOGIC LEVEL TRIAC

PART NUMBER INFORMATION

Jul - 02

FAGOR

SCR

CURRENT

CASE

VOLTAGE

SENSITIVITY

F T 04 09 B E 00

FORMING

TU

PACKAGING

Electrical Characteristics

Gate Trigger Current

Off-State Leakage Current

Threshold Voltage

Dynamic Resistance

On-state Voltage

Gate Trigger Voltage

Gate Non Trigger Voltage

Holding Current

Latching Current

Critical Rate of Voltage Rise

PARAMETER CONDITIONS SENSITIVITY

Unit

SYMBOL

I

GT

I

DRM

VD = 12 V

DC

, R

L

= 30Ω, T

j

= 25 ºC

mA

mA

0.5

5

0.95

180

2

1.3

0.2

15

100

mA

µA

V

mΩ

V

V

V

mA

mA

V/µs

V/µs

MAX

MAX

MAX

MAX

MAX

MAX

MAX

MAX

MIN

MAX

MAX

MAX

MIN

MIN

/I

RRM

V

TM

*

V

GT

V

GD

IH*
I

L

dv / dt*

R

th(j-a)

Thermal Resistance
Junction-Ambient

VD = V

DRM

, Tj = 125 ºC

T

j

= 25 ºC

V

R

= V

RRM

,

IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC

VD = 12 V

DC

, R

L

= 30Ω, T

j

= 25 ºC

I

T

= 50 mA

Tj = 25 ºC

I

G

= 1.2 IGT,

Tj

= 25 ºC

V

D

= 0.67 x V

DRM

, Gate open

T

j

= 125 ºC

Quadrant

Q1÷Q3

Q4

Q1÷Q4

Q1÷Q4

Q1,Q3,Q4

Q2

V

D

= V

DRM

, R

L

= 3.3KΩ, T

j

= 125 ºC

ºC/W

ºC/W

(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.

R

th(j-l)

Thermal Resistance
Junction-Leads for AC

(dv/dt)c*

(di/dt)c= 1.8 A/ms T

j

= 110 ºC

V

to

R

d

Tj = 125 ºC

T

j

= 125 ºC

05

5

5

09

10

10

10

15

25

100

2

7

10

15

20

1

Critidal rise rate of
commutating off-state
Voltage

FT04...E/F

LOGIC LEVEL TRIAC

Jul - 02

Fig. 1: Maximum average power disipation
versus RMS on-state current (full cycle)

0 2

5

4

3

2

1

0

P (W)

I

T(RMS)

(A)

0.5 3

α

360 º

Fig. 2: RMS on-state current versus ambient
temperature (full cycle)

I

T(RMS)

(A)

T amb (ºC)

5

4

3

2

1

0

0 25 50 75 100 125

1 1.5 2.5 3.5

Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.

IGT, I

H, IL

(Tj) / IGT, I

H, IL

(Tj = 25 ºC)

Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature.

Tj (ºC)

2.5

2.0

1.5

1.0

0.5

0.0

-40 -20 20 60 80 1000 40 120 140

IH & IL

IGT

I

TSM

(A). I2t (A2s)

Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp ≤ 10 ms, and corresponding value of I

2

t.

100

10

1

1 10

Tj initial = 25 ºC

tp(ms)

I

TSM

I2 t

1 10 100 1000

Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.

35

30

25

20

15

10

5

0

I

TSM

(A)

Number of cycles

Tj initial = 25 ºC
F= 50Hz

Rth(j-a)=100 ºC/W

1.00

0.10

0.01

Zth(j-a) / Rth(j-a)

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

tp (s)

Rth(j-a)=Rth(j-l)

FT04...E/F

Jul - 02

LOGIC LEVEL TRIAC

Fig. 7: On-state characteristics (maximum
values)

20.0

1.0

0.1

ITM(A)

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

Tj initial

25 ºC

VTM(V)

Tj max
Vto = 0.95 V
Rd = 180 mW

(.287)

7,3

C

D

10,5

(.413)

N1

2,54

(.100)

P

5,3

N

(.209)

max.

O

max.

max.

1,4

(.055)

(.028)

0,7

TO 202-3

A

max.
10,1

(.398)

1,5

(.059)

max.

F

M

4,5

(.177)

H

(.020)

0,51

J

1,5

(.059)

3,16

3,20
(.124)
(.126)

K

(.126)

3,2

A

max.
10,1

(.398)

G

J

H

1,5

(.059)

(.020)

0,51

M

13,7

(.540)

(.287)

7,3

C

D

10,5

(.413)

N1

2,54

(.100)

P

5,3

N

(.209)

max.

O

I

max.

max.

1,4

(.055)

(.028)

0,7

4,5

(.177)

TO 202-1

1,5

(.059)

max.

F

PACKAGE MECHANICAL DATA

TO 202-1 TO 202-3

10.0

Tj max