Page 1
FSYE13A0D, FSYE13A0R
Data Sheet May 1999
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developeda
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity toSingleEvent Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSYE13A0D1
10K TXV FSYE13A0D3
100K Commercial FSYE13A0R1
100K TXV FSYE13A0R3
100K Space FSYE13A0R4
File Number
Features
• 12A, 100V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
V
up to 80% of Rated Breakdown and
DS
V
of 10V Off-Bias
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
- Usable to 3E14 Neutrons/cm
DS(ON)
= 0.160Ω
2
2
with
2
Symbol
D
G
S
Packaging
SMD.5
4741
DSS
DM
Formerly available as type TA17696.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
FSYE13A0D, FSYE13A0R
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSYE13A0D, FSYE13A0R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
DGR
100 V
100 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
D
D
DM
GS
12 A
8A
36 A
±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
42 W
17 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
36 A
12 A
36 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V 100 - - V
= VDS,
ID = 1mA
TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = 80V,
VGS = 0V
TC = 25oC--25µA
TC = 125oC - - 250 µA
VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V
(PLATEAU)ID
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
r
f
g(12)
g(TH)
gs
gd
ISS
OSS
RSS
JC
θ
= 12V, ID = 12A 2.32 V
= 8A,
VGS = 12V
VDD = 50V, ID = 12A,
RL = 4.17Ω, VGS = 12V,
RGS = 7.5Ω
TC = 25oC - 0.093 0.160 Ω
TC = 125oC - - 0.246 Ω
- - 15 ns
- - 70 ns
- - 35 ns
- - 30 ns
= 0V to 20V VDD = 50V,
VGS = 0V to 12V - 36 40 nC
ID = 12A
- - 59 nC
VGS = 0V to 2V - - 1.9 nC
- 6.5 7.8 nC
-2023nC
= 12A, VDS = 15V - 8 - V
VDS = 25V, VGS = 0V,
f = 1MHz
- 760 - pF
- 310 - pF
- 110 - pF
- - 3.0
o
C/W
2
Page 3
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
SD
rr
FSYE13A0D, FSYE13A0R
ISD = 12A 0.6 - 1.8 V
ISD = 12A, dISD/dt = 100A/µs - - 300 ns
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)VGS
DS(ON)12VGS
DSS
GS(TH)VGS
GSS
DSS
VGS = 0, ID = 1mA 100 - V
= VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 80V - 25 µA
= 12V, ID = 12A - 2.32 V
= 12V, ID = 8A - 0.160 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST SYMBOL
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 100
Br 37 36 -10 100
Br 37 36 -15 80
Br 37 36 -20 50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)
Typical Performance Curves
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm2, RANGE = 36µ
V
(V)
GS
(V)
DS
V
120
100
80
60
40
20
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
0
0 -10 -15 -20 -25-5
Unless Otherwise Specified
2
, RANGE = 43µ
LIMITING INDUCTANCE (HENRY)
1E-3
1E-4
1E-5
1E-6
1E-7
30
DRAIN SUPPLY (V)
ILM = 10A
30A
100A
300A
30010010
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
3
1000
Page 4
FSYE13A0D, FSYE13A0R
Typical Performance Curves
16
14
12
10
8
, DRAIN (A)
D
6
I
4
2
0
-50
0
TC, CASE TEMPERATURE (oC)
50
Unless Otherwise Specified (Continued)
100
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
150
100
10
1
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
10
TC = 25oC
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms,VGS = 12V, ID = 8A
2.0
100µs
1ms
10ms
300
12V
V
Q
GS
G
Q
G
Q
GD
CHARGE
DS(ON)
1.5
1.0
NORMALIZED r
0.5
0.0
-80 -40 0
FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED r
10
)
1
θJC
NORMALIZED
0.01
THERMAL RESPONSE (Z
0.001
0.1
0.5
0.2
0.1
0.05
0.02
0.01
-5
10
SINGLE PULSE
-4
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-3
10
t, RECTANGULAR PULSE DURATION (s)
-2
10
40
, JUNCTION TEMPERATURE (oC)
T
J
vs JUNCTION TEMPERATURE
DS(ON)
P
DM
1/t2
+ T
JC
C
θ
-1
10
10
80 120 160
t
1
t
2
0
1
10
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4
Page 5
FSYE13A0D, FSYE13A0R
Typical Performance Curves
50
10
, AVALANCHE CURRENT (A)
AS
I
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
V
DS
Unless Otherwise Specified (Continued)
STARTING TJ = 25oC
STARTING TJ = 150oC
IF R = 0
t
= (L) (IAS) / (1.3 RATED BV
AV
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BV
1
0.01
0.1 1
t
, TIME IN AVALANCHE (ms)
AV
DSS
- VDD)
DSS
- VDD) + 1]
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
IS REACHED
AS
10
L
BV
DSS
P
t
AV
VARY t
TO OBTAIN
P
REQUIRED PEAK I
VGS≤ 20V
t
0V
P
CURRENT
TRANSFORMER
50Ω
AS
+
I
AS
-
+
V
DD
-
DUT
50Ω
50V-150V
t
I
AS
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
t
t
d(ON)
90%
ON
10%
t
r
PULSE WIDTH
0V
VGS = 12V
V
DD
R
L
V
DS
DUT
R
GS
V
DS
V
GS
10%
V
DS
t
d(OFF)
90%
t
OFF
50%50%
V
t
f
10%
DD
90%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5
Page 6
FSYE13A0D, FSYE13A0R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T
PARAMETER SYMBOL TEST CONDITIONS MAX UNITS
= 25oC, Unless Otherwise Specified
C
Gate to Source Leakage Current I
Zero Gate Voltage Drain Current I
Drain to Source On Resistance r
Gate Threshold Voltage V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
DS(ON)
GSS
DSS
GS(TH)
VGS = ±20V ±20 (Note 7) nA
VDS = 80% Rated Value ±25 (Note 7) µA
TC = 25oC at Rated I
ID = 1.0mA ±20% (Note 8) V
D
±20% (Note 8) Ω
Screening Information
TEST JANTXV EQUIVALENT JANS EQUIVALENT
Gate Stress VGS = 30V, t = 250µsV
Pind Optional Required
Pre Burn-In Tests (Note 9) MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
and Limits Table
= 30V, t = 250µs
GS
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
PDA 10% 5%
Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A,
NOTE:
9. Test limits are identical pre and post burn-in.
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
Subgroups 2 and 3
Additional Screening Tests
PARAMETER SYMBOL TEST CONDITIONS MAX UNITS
Safe Operating Area SOA VDS = 80V, t = 10ms 1.16 A
Unclamped Inductive Switching I
Thermal Response ∆V
Thermal Impedance ∆V
AS
SD
SD
V
GS(PEAK)
tH = 10ms; VH = 25V; IH = 1A 74 mV
tH = 100ms; VH = 25V; IH = 1A 165 mV
= 15V, L = 0.1mH 36 A
6
Page 7
FSYE13A0D, FSYE13A0R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A - Attributes Data Sheet
E. Group B - Attributes Data Sheet
F. Group C - Attributes Data Sheet
G. Group D - Attributes Data Sheet
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A - Attributes Data Sheet
- Group A Lot Traveler
E. Group B - Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C - Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D - Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group A - Attributes Data Sheet
G. Group B - Attributes Data Sheet
H. Group C - Attributes Data Sheet
I. Group D - Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
7
Page 8
SMD.5
3 PAD CERAMIC LEADLESS CHIP CARRIER
FSYE13A0D, FSYE13A0R
E
SYMBOL
NOTESMIN MAX MIN MAX
A 0.108 0.118 2.74 2.99 -
b 0.090 0.100 2.28 2.54 -
D 0.291 0.301 7.39 7.64 -
INCHES MILLIMETERS
D
D
1
D
2
0.281 0.291 7.13 7.39 -
0.145 0.155 3.68 3.93 -
E 0.395 0.405 10.03 10.28 -
E
1
E
2
0.220 0.230 5.58 5.84 -
0.120 0.130 3.04 3.30 -
NOTES:
1. No current JEDEC outline for this package.
A
2. Controlling dimension: Inch.
3. Revision 1 dated 3-99.
E
1
D
1
3
E
2
2
D
2
1
1 - GATE
2 - SOURCE
3 - DRAIN
b
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly , the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
8
Loading...