Datasheet FSS234R, FSS234D Datasheet (Intersil Corporation)

June 1998

FSS234D , FSS234R

6A, 250V, 0.600 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

Features

• 6A, 250V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 4.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

DS(ON)

= 0.600Ω

2

2

with

DSS

DM

2

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSS234D1
10K TXV FSS234D3
100K Commercial FSS234R1
100K TXV FSS234R3
100K Space FSS234R4

Description

The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specifi­cally designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military
applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc­ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications exposed
to radiation environments such as switching regulation,
switching converters, motor drives, relay drivers and drivers
for high-power bipolar switching transistors requiring high
speed and low gate drive power. This type can be operated
directly from integrated circuits.

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.

Symbol

D

G

Formerly available as type TA17638.

Package

TO-257AA

S

D

G

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

3-83

S

File Number 4053.2

FSS234D, FSS234R

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

FSS234D, FSS234R UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

250 V
250 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

6A
4A

18 A

±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

50 W
20 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

18 A

6A

18 A

-55 to 150
300

o

C

o

C

(Distance >0.063 in. (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 250 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 200V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V

(PLATEAU)ID

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

r

f

g(12)

g(TH)

gs

gd

ISS
OSS
RSS

JC

θ

JA

θ

= 12V, ID = 6A 3.78 V

= 4A,

VGS = 12V

VDD = 125V, ID = 6A,
RL = 20.8Ω, VGS 12V,
RGS = 7.5Ω

TC = 25oC - 0.450 0.600 Ω
TC = 125oC - - 1.08 Ω

- - 70 ns

- - 140 ns

- - 120 ns

- - 95 ns

= 0V to 20V VDD = 125V,

VGS = 0V to 12V - 32 41 nC

ID = 6A

- - 62 nC

VGS = 0V to 2V - - 3.0 nC

- 7.3 11 nC

-1621nC

= 6A, VDS = 15V - 7 - V

VDS = 25V, VGS = 0V,
f = 1MHz

- 770 - pF

- 165 - pF

-40-pF

- - 2.5

o

C/W

--60oC/W

3-84

FSS234D, FSS234R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

Electrical Specifications up to 100K RAD T

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

Single Event Effects (SEB, SEGR) (Note 4)

TEST SYMBOL

Single Event Effects Safe Operating
Area

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

ISD = 6A 0.6 - 1.8 V
ISD = 6A,dISD/dt = 100A/µs - - 420 ns

= 25oC, Unless Otherwise Specified

C

DSS

GS(TH)

GSS
DSS

DS(ON)

DS(ON)12VGS

VGS = 0, ID = 1mA 250 - V
VGS = VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 200V - 25 µA
VGS = 12V, ID = 6A - 3.78 V

= 12V, ID = 4A - 0.600 Ω

.

DSS

ENVIRONMENT (NOTE 5)

APPLIED

ION

SPECIES

TYPICAL LET
(MeV/mg/cm)

TYPICAL

RANGE (µ)

VGS BIAS

SEESOA Ni 26 43 -20 250

Br 37 36 -5 250
Br 37 36 -10 200
Br 37 36 -15 125
Br 37 36 -20 50

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

Typical Performance Curves

LET = 26MeV/mg/cm

300

200

(V)

DS

V

100

TEMP = 25oC

0

0 -10 -15 -20 -25

LET = 37MeV/mg/cm2, RANGE = 36µ

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

-5
VGS (V)

Unless Otherwise Specified

2

, RANGE = 43µ

LIMITING INDUCTANCE (HENRY)

1E-3

1E-4

1E-5

1E-6

1E-7

30

DRAIN SUPPLY (V)

ILM = 10A

30A

100A

300A

30010010

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO I

AS

3-85

1000

FSS234D, FSS234R

Typical Performance Curves

8

6

4

, DRAIN (A)

D

I

2

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified (Continued)

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

12V

V

Q

GS

G

Q

G

Q

GD

50

10

1

, DRAIN CURRENT (A)

D

I

150100500-50

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.1
1

DS(ON)

10 100 700

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

100µs

1ms

10ms

100ms

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

2.5
PULSE DURATION = 250ms, VGS = 12V, ID = 4A

2.0

DS(ON)

1.5

1.0

NORMALIZED r

0.5

CHARGE

0.0

-80 -40 0 40 80 120 160

FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED r

10

)

1

θJC

0.5

0.2

0.1

0.1

0.05

NORMALIZED

0.02

0.01

0.01

THERMAL RESPONSE (Z

0.001

-5

10

SINGLE PULSE

-4

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

, JUNCTION TEMPERATURE (oC)

T

J

vs JUNCTION TEMPERA TURE

DS(ON)

P

DM

t

1

t

2

0

10

10

θJC

1/t2

-1

+ T

C

1

10

3-86

FSS234D, FSS234R

Typical Performance Curves

30

10

, AVALANCHE CURRENT (A)

AS

I

1

FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

ELECTRONIC SWITCH OPENS

WHEN I

V

DS

Unless Otherwise Specified (Continued)

STARTING TJ = 25oC

STARTING TJ = 150oC

IF R = 0
tAV = (L) (IAS) / (1.3 RATED BV

IF R ≠ 0

= (L/R) ln [(IAS*R) / (1.3 RATED

t

AV

- VDD) + 1]

BV

DSS

0.01 0.1 1 100.001
tAV, TIME IN AVALANCHE (ms)

IS REACHED

AS

DSS

- VDD)

L

BV

DSS

P

t

AV

VARY t

TO OBTAIN

P

REQUIRED PEAK I

VGS≤ 20V

t

0V

P

CURRENT

TRANSFORMER

50Ω

AS

+

I

AS

-

+

V

DD

-

DUT

50Ω

50V-150V

t

I

AS

FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS

t

t

d(ON)

90%

ON

10%

t

r

PULSE WIDTH

0V

VGS = 12V

V

DD

R

L

V

DS

DUT

R

GS

V

DS

V

GS

10%

V

DS

t

d(OFF)

90%

t

OFF

50%50%

V

t

f

10%

DD

90%

FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

3-87

FSS234D, FSS234R

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).

Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

= 25oC, Unless Otherwise Specified

C

Gate to Source Leakage Current I
Zero Gate Voltage Drain Current I
Drain to Source On Resistance r
Gate Threshold Voltage V

NOTES:

7. Or 100% of Initial Reading (whichever is greater).

8. Of Initial Reading.

GSS

DSS

DS(ON)

GS(TH)

VGS = ±20V ±20 (Note 7) nA
VDS = 80% Rated Value ±25 (Note 7) µA
TC = 25oC at Rated I
ID = 1.0mA ±20% (Note 8) V

D

±20% (Note 8) Ω

Screening Information

TEST JANTXV EQUIVALENT JANS EQUIVALENT

Gate Stress VGS = 30V, t = 250µsV
Pind Optional Required
Pre Burn-In Tests (Note 9) MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC)

Steady State Gate
Bias (Gate Stress)

Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests

MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours

and Limits Table

= 30V, t = 250µs

GS

MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)

MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours

All Delta Parameters Listed in the Delta Tests
and Limits Table

Steady State Reverse
Bias (Drain Stress)

PDA 10% 5%
Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A,

NOTE:

9. Test limits are identical pre and post burn-in.

MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours

MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours

Subgroups 2 and 3

Additional Screening Tests

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Safe Operating Area SOA VDS = 200V, t = 10ms 0.33 A
Unclamped Inductive Switching I
Thermal Response ∆V
Thermal Impedance ∆V

AS

SD

SD

V

GS(PEAK)

tH = 100ms; VH = 25V; IH = 1A 90 mV
tH = 500ms; VH = 25V; IH = 1A 125 mV

= 15V, L = 0.1mH 18 A

3-88

FSS234D, FSS234R

Rad Hard Data Packages - Intersil Power Transistors

TXV Equivalent

1. Rad Hard TXV Equivalent - Standard Data Package

A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A - Attributes Data Sheet
E. Group B - Attributes Data Sheet

F. Group C - Attributes Data Sheet

G. Group D - Attributes Data Sheet

2. Rad Hard TXV Equivalent - Optional Data Package

A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet

- Precondition Lot Traveler

- Pre and Post Burn-In Read and Record
Data

D. Group A - Attributes Data Sheet

- Group A Lot Traveler

E. Group B - Attributes Data Sheet

- Group B Lot Traveler

- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)

F. Group C - Attributes Data Sheet

- Group C Lot Traveler

- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

G. Group D - Attributes Data Sheet

- Group D Lot Traveler

- Pre and Post RAD Read and Record Data

Class S - Equivalents

1. Rad Hard “S” Equivalent - Standard Data Package

A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report

E. Preconditioning Attributes Data Sheet

Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi T emp Drain Stress Post Reverse
Bias Delta Data

F. Group A - Attributes Data Sheet

G. Group B - Attributes Data Sheet

H. Group C - Attributes Data Sheet

I. Group D - Attributes Data Sheet

2. Rad Hard Max. “S” Equivalent - Optional Data Package

A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data

- X-Ray and X-Ray Report

F. Group A - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups A2, A3, A4, A5 and A7 Data

G. Group B - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups B1, B3, B4, B5 and B6 Data

H. Group C - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups C1, C2, C3 and C6 Data

I. Group D - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Pre and Post Radiation Data

3-89

FSS234D, FSS234R

TO-257AA

3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE

E

Q

ØP

H

1

A

A

1

SYMBOL

A 0.190 0.200 4.83 5.08 -

A

1

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

0.035 0.045 0.89 1.14 -

Øb 0.025 0.035 0.64 0.88 2, 3

D

Øb

0.060 0.090 1.53 2.28 -

1

D 0.645 0.665 16.39 16.89 ­E 0.410 0.420 10.42 10.66 -

e 0.100 TYP 2.54 TYP 4

L

1

L

0.065 R TYP.

Øb

1

b

123

e

e

1

J

1

e

1

H

1

J

1

L 0.600 0.650 15.24 16.51 -

L

1

ØP 0.140 0.150 3.56 3.81 -

Q 0.113 0.133 2.88 3.37 -

NOTES:

0.200 BSC 5.08 BSC 4

0.230 0.250 5.85 6.35 -

0.110 0.130 2.80 3.30 4

- 0.035 - 0.88 -

1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-257AA dated 9-88.

2. Add typically 0.002 inches (0.05mm) for solder coating.

3. Lead dimension (without solder).

4. Position of lead to be measured 0.150 inches (3.81mm) from bottom
of dimension D.

5. Die to base BeO isolated, terminals to case ceramic isolated.

6. Controlling dimension: Inch.

7. Revision 1 dated 1-93.

WARNING!

BERYLLIA WARNING PER MIL-S-19500

Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]

EUROPE

Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]

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Taiwan Limited
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Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]

3-90