Datasheet FSS207 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6346

FSS207

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S207

D

D

R
R

Package Dimensions

unit:mm

2116

[FSS207]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

I

V,Am1=

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A01=3223S

D

V4=0131mΩ

SG

V5.2=5112mΩ

SG

zHM1=f,V01=0071Fp
zHM1=f,V01=0021Fp
zHM1=f,V01=086Fp

SSD
SSG

)ffo(SG

1IDV,A01=

)no(SD

2IDV,A2=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source

0.2

3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8

sgnitaR

Continued on next page.

02V
01±V
01A

2W

˚C
˚C

tinU

31000TS (KOTO) TA-1507 No.6346-1/4

FSS207

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A01=

0=0.12.1V

SG

Switching Time Test Circuit

VDD=10V

V

4V
0V

PW=10µs
D.C.≤1%

IN

V

IN

G

ID=10A
RL=1Ω

D

V

OUT

tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS062sn
tiucriCtseTdeificepseeS062sn
tiucriCtseTdeificepseeS082sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A01=57Cn
A01=01Cn
A01=21Cn

tinU

P.G

10

9

8.0V

8

6.0V

7

–A

6

D

5

4

3

Drain Current, I

2

1
0

0 0.1 0.2 0.3 0.4 0.5

2.5V

4.0V

50Ω

I

2.0V

3.0V

D

-- V

DS

FSS207

S

Drain-to-Source Voltage, VDS–V

–mΩ

DS(on)

40

35

30

25

20

15

2A

RDS(on) -- V

ID=10A

GS

VGS=1.5V

IT01469

Ta=25°C

I

-- V

20

VDS=10V

18

16

14

–A

D

12

10

8

6

Drain Current, I

4

2
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

D

GS

°C

Ta=75

°C

--25

Gate-to-Source Voltage, VGS–V

RDS(on) -- Ta

=2.5V

GS

=2A, V

I

D

=4.0V

GS

=10A, V

I

D

–mΩ

DS(on)

25

20

15

10

°C

25

IT01470

10

5

Static Drain-to-Source

On-State Resistance, R

0

012345678910

Gate-to-Source Voltage, V

GS

–V

IT01471

5

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 4020 60 80 100 160140120

Ambient Temperature, Ta – ˚C

IT01472

No.6346-2/4

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

23 57 23 57 23 57 23 57

10000

7
5

3
2

1000

7
5

Ciss, Coss, Crss – pF

3
2

100

024 681012141618

Ciss, Coss, Crss -- V

yfs -- I

°C

75°C

Ta=--25

25°C

0.10.01 1.0 10 100

Drain Current, ID–A

D

Drain-to-Source Voltage, VDS–V

Switching Time, SW Time – ns

1000

100

7
5

3
2

7
5

3
2

10

0.1

td(off)

t

r

23 57

SW Time -- I

t

f

1.0 10 100

D

td(on)

Drain Current, ID–A

P

-- Ta

2.5

D

VDS=10V

DS

Ciss
Coss

Crss

VDD=10V
VGS=4V

23 5723 57

IT01473

f=1MHz

IT01475

IT01477

FSS207

20

I

-- V

F

100

7
5

3
2

10

7

–A

5

F

3
2

1.0
7
5

3
2

0.1

Forward Current, I

7
5

3
2

0.01
0 0.40.2 0.6 0.8 1.0 1.2 1.4

Ta=75

SD

°C

25°C

--25°C

Diode Forward Voltage, VSD–V

V

-- Qg

10

VDS=10V

9

ID=10A

V

8

GS –

7
6

5
4

3
2

Gate-to-Source Voltage, V

1
0

010203025 35 40 45 5550 60 65 70 75515

GS

Total Gate Charge, Qg – nC

100

IDP=52A

7
5

3
2

ID=10A

10

7
5

–A

3

D

2

1.0
7
5

Operation in this

3

area is limited by RDS(on).

2

Drain Current, I

0.1
7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01
23 57 23 57 7

0.01

0.1

A S O

100ms

DC operation

23 5 723 5

1.0 10

100µs

1ms

10ms

Drain-to-Source Voltage, VDS–V

VGS=0

IT01474

IT01476

100

IT01478

–W

2.0

D

1.5

1.0

0.5

Mounted on a ceramic board (1000mm

2

×0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT01479

No.6346-3/4

FSS207

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6346-4/4