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FSS13A0D

Datasheet FSS13A0R, FSS13A0D Datasheet (Intersil Corporation)

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Page 1
TM
FSS13A0D, FSS13A0R
Data Sheet June 2000
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Formerly available as type TA17696.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSS13A0D1 10K TXV FSS13A0D3 100K Commercial FSS13A0R1 100K TXV FSS13A0R3 100K Space FSS13A0R4
File Number 4487.3
Features
• 12A, 100V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm V
up to 80% of Rated Breakdown and
DS
V
of 10V Off-Bias
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm
- Usable to 3E14 Neutrons/cm
DS(ON)
= 0.170Ω
2
2
with
2
Symbol
D
G
S
Packaging
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
DSS
DM
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
Page 2
FSS13A0D, FSS13A0R
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSS13A0D, FSS13A0R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
DGR
100 V 100 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
D D
DM
GS
12 A
9A
36 A
±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T T
56 W 22 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
36 A 12 A 36 A
-55 to 150 300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V 100 - - V
= VDS,
ID = 1mA
TC = -55oC - - 5.0 V TC = 25oC 1.5 - 4.0 V TC = 125oC 0.5 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = 80V, VGS = 0V
TC = 25oC--25µA TC = 125oC - - 250 µA
VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA Drain to Source On-State Voltage V Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t Turn-Off Delay Time t
d(OFF)
Fall Time t Total Gate Charge Q
g(TOT)VGS
Gate Charge at 12V Q Threshold Gate Charge Q Gate Charge Source Q Gate Charge Drain Q Plateau Voltage V
(PLATEAU)ID
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R
r
f
g(12)
g(TH)
gs
gd
ISS OSS RSS
JC
θ
JA
θ
= 12V, ID = 12A - - 2.32 V
= 9A,
VGS = 12V VDD = 50V, ID = 12A,
RL = 4.17Ω, VGS = 12V, RGS = 7.5Ω
TC = 25oC - 0.100 0.170 Ω TC = 125oC - - 0.289 Ω
- - 20 ns
- - 75 ns
- - 45 ns
- - 25 ns
= 0V to 20V VDD = 50V,
VGS = 0V to 12V - 35 42 nC
ID = 12A
- - 61 nC
VGS = 0V to 2V - - - nC
- 6.8 8.3 nC
-2022nC
= 12A, VDS = 15V - 8 - V
VDS = 25V, VGS = 0V, f = 1MHz
- 760 - pF
- 310 - pF
- 110 - pF
- - 2.2
o
C/W
--60oC/W
2
Page 3
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V Reverse Recovery Time t
SD
rr
FSS13A0D, FSS13A0R
ISD = 12A 0.6 - 1.8 V ISD = 12A, dISD/dt = 100A/µs - - 280 ns
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV Gate to Source Threshold Volts (Note 3) V Gate to Body Leakage (Notes 2, 3) I Zero Gate Leakage (Note 3) I Drain to Source On-State Volts (Notes 1, 3) V Drain to Source On Resistance (Notes 1, 3) r
DS(ON)VGS
DS(ON)12VGS
DSS
GS(TH)VGS
GSS DSS
VGS = 0, ID = 1mA 100 - V
= VDS, ID = 1mA 1.5 4.0 V VGS = ±20V, VDS = 0V - 100 nA VGS = 0, VDS = 80V - 25 µA
= 12V, ID = 12A - 2.32 V
= 12V, ID = 9A - 0.170 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST SYMBOL
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 100
Br 37 36 -10 100 Br 37 36 -15 80 Br 37 36 -20 50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)
Typical Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
120
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
100
80
(V)
60
DS
V
40
20
TEMP = 25oC
0
0 -10 -15 -20 -25-5
LET = 37MeV/mg/cm2, RANGE = 36µ
(V)
V
GS
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAININDUCTANCE REQUIREDTO LIMIT
3
LIMITING INDUCTANCE (HENRY)
1E-3
1E-4
1E-5
1E-6
1E-7
30
DRAIN SUPPLY (V)
GAMMA DOT CURRENT TO I
ILM = 10A
30A
100A
300A
30010010
AS
1000
Page 4
FSS13A0D, FSS13A0R
Typical Performance Curves Unless Otherwise Specified (Continued)
16
14
12
10
8
, DRAIN (A)
6
D
I
4
2
0
TC, CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENTvs
TEMPERATURE
12V
V
Q
GS
G
Q
G
Q
GD
100
10
1
, DRAIN CURRENT (A)
D
I
150100500-50
OPERATION IN THIS AREA MAY BE LIMITED BY r
0.1 1
DS(ON)
10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
TC = 25oC
100ms
1ms
10ms 100ms
300
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
2.0
DS(ON)
1.5
1.0
NORMALIZED r
0.5
PULSE DURATION = 250ms, VGS = 12V, ID = 9A
0.0
CHARGE
-80 -40 0 40 80 120 160 , JUNCTION TEMPERATURE (oC)
T
J
FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED r
TEMPERATURE
1
10
)
JC
θ
0
10
0.5
0.2
-1
0.1
10
0.05
0.02
0.01
-2
10
NORMALIZED THERMAL RESPONSE (Z
-3
10
-5
10
SINGLE PULSE
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
-2
10
NOTES: DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
1/t2
JC
θ
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
+ T
DS(ON)
C
10
vs JUNCTION
P
DM
t
1
0
t
2
1
10
4
Page 5
FSS13A0D, FSS13A0R
Typical Performance Curves Unless Otherwise Specified (Continued)
5
STARTING TJ = 25oC
10
STARTING TJ = 150oC
IF R = 0
, AVALANCHE CURRENT (A)
tAV = (L) (IAS) / (1.3 RATED BV
AS
I
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BV
1
0.01 0.1 1 , TIME IN AVALANCHE (ms)
t
AV
DSS
- VDD)
DSS
- VDD) + 1]
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
10
VARY t
TO OBTAIN
P
REQUIRED PEAK I
VGS≤ 20V
t
0V
P
CURRENT
TRANSFORMER
50Ω
AS
ELECTRONIC SWITCH OPENS
WHEN I
V
DS
L
+
I
AS
-
50Ω
DUT
IS REACHED
AS
+
V
DD
-
50V-150V
BV
DSS
t
P
I
AS
t
AV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
t
t
d(ON)
90%
ON
10%
t
r
PULSE WIDTH
0V
VGS = 12V
V
DD
R
L
V
DS
DUT
R
GS
V
DS
V
GS
10%
V
DS
t
d(OFF)
90%
t
OFF
50%50%
V
t
f
10%
DD
90%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5
Page 6
FSS13A0D, FSS13A0R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T
PARAMETER SYMBOL TEST CONDITIONS MAX UNITS
Gate to Source Leakage Current I Zero Gate Voltage Drain Current I Drain to Source On Resistance r Gate Threshold Voltage V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
DS(ON)
GS(TH)
GSS DSS
VGS = ±20V ±20 (Note 7) nA VDS = 80% Rated Value ±25 (Note 7) µA TC = 25oC at Rated I ID = 1.0mA ±20% (Note 8) V
Screening Information
TEST JANTXV EQUIVALENT JANS EQUIVALENT
Gate Stress VGS = 30V, t = 250µsV Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate Bias (Gate Stress)
Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests
Steady State Reverse Bias (Drain Stress)
PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A,
NOTE:
9. Test limits are identical pre and post burn-in.
MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours
and Limits Table MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours
= 25oC, Unless Otherwise Specified
C
D
MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC)
MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and Limits Table
MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours
Subgroups 2 and 3
±20% (Note 8) Ω
= 30V, t = 250µs
GS
Additional Screening Tests
PARAMETER SYMBOL TEST CONDITIONS MAX UNITS
Safe Operating Area SOA VDS = 80V, t = 10ms 1.6 A Unclamped Inductive Switching I Thermal Response ∆V Thermal Impedance ∆V
6
AS
SD SD
V
GS(PEAK)
tH = 100ms; VH = 25V; IH = 1A 85 mV tH = 500ms; VH = 25V; IH = 1A 125 mV
= 15V, L = 0.1mH 36 A
Page 7
FSS13A0D, FSS13A0R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE
A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet
F. Group C - Attributes Data Sheet
G. Group D - Attributes Data Sheet
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE
A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record Data
D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet
- Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating Life Read and Record Data (SubgroupB6)
F. Group C - Attributes Data Sheet
- Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D - Attributes Data Sheet
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data
F. Group A - Attributes Data Sheet G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet
I. Group D - Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A - Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B - Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C - Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D - Attributes Data Sheet
- Pre and Post Radiation Data
7
Page 8
FSS13A0D, FSS13A0R
TO-257AA
3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE
E
Q
ØP
H
1
A
A
1
SYMBOL
A 0.190 0.200 4.83 5.08 -
A
1
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
0.035 0.045 0.89 1.14 -
Øb 0.025 0.035 0.64 0.88 2, 3
D
Øb
0.060 0.090 1.53 2.28 -
1
D 0.645 0.665 16.39 16.89 ­E 0.410 0.420 10.42 10.66 -
e 0.100 TYP 2.54 TYP 4
L
1
L
123
0.065 R TYP.
Øb
e
e
1
Øb
1
J
1
e
1
H
1
J
1
L 0.600 0.650 15.24 16.51 -
L
1
ØP 0.140 0.150 3.56 3.81 -
Q 0.113 0.133 2.88 3.37 -
NOTES:
0.200 BSC 5.08 BSC 4
0.230 0.250 5.85 6.35 -
0.110 0.130 2.80 3.30 4
- 0.035 - 0.88 -
1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-257AA dated 9-88.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Positionof leadto bemeasured 0.150inches (3.81mm)frombottom of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packagescontainingberyllium oxide(BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly,the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240
8
EUROPE
Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05
ASIA
Intersil Ltd. 8F-2, 96, Sec. 1, Chien-kuo North, Taipei, Taiwan 104 Republic of China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369
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