Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6398
FSS132
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : S132
D
D
SG
R
SD
R
SD
R
SD
Package Dimensions
unit:mm
2116
[FSS132]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %184–A
PD
Mounted on a ceramic board (1200mm2×0.8mm)
SSD)RB(
SSD
SSG
)ffo(VSDI,V01–=
1)no(IDV,A7–=
2)no(IDV,A4–=
3)no(IDV,A4–=
I
D
V
V
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
0=1–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–4.2–V
D
A7–=4.821S
D
V01–=2292mΩ
SG
V5.4–=4384mΩ
SG
V4–=8345mΩ
SG
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
03–V
02±V
7–A
8.1W
˚C
˚C
tinU
60100TS (KOTO) TA-2720 No.6398-1/4
Page 2
FSS132
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A7–=
S
Switching Time Test Circuit
VDD=--15V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID=--7A
RL=2.1Ω
V
OUT
zHM1=f,V01–=0071Fp
zHM1=f,V01–=083Fp
zHM1=f,V01–=042Fp
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS58sn
tiucriCtseTdeificepseeS09sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=28.0–5.1–V
SG
sgnitaR
nimpytxam
A7–=23Cn
D
A7–=5.4Cn
D
A7–=5Cn
D
tinU
P.G
--10
--9
--8
--7
–A
D
--6
--5
--4
--3
Drain Current, I
--2
--1
0
80
70
--10.0V
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS–V
50Ω
I
-- V
D
--4.5V
--6.0V
--4.0V
--3.5V
RDS(on) -- V
DS
S
FSS132
VGS=--2.5V
GS
Ta=25°C
--3.0V
IT01577
--12
--10
--8
–A
D
--6
--4
D
VDS=-10V
GS
I
-- V
Drain Current, I
--2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.5--3.0
80
70
Gate-to-Source Voltage, VGS–V
RDS(on) -- Ta
Ta=75°C
--25°C
25°C
IT01578
60
–mΩ
ID=--4A
50
(on)
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
--7A
Gate-to-Source Voltage, V
GS
–V
IT01579
60
–mΩ
50
(on)
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 160140
=- -4A, V
I
D
I
D
I
=- -4A, V
=- -7A, V
D
Ambient Temperature, Ta – ˚C
GS
=- -4.0V
GS
GS
=- -4.5V
=- -10.0V
IT01580
No.6398-2/4
Page 3
100
7
5
3
fs|–S
2
y
10
7
5
3
2
1.0
7
5
3
2
Forward Transfer Admittance, |
0.1
10000
1000
Ciss, Coss, Crss – pF
100
1000
23 57 23 57 2
--0.1
Ciss, Coss, Crss -- V
7
5
3
2
7
5
3
2
0 --5 --10 --15 --20 --25
7
5
3
2
Drain-to-Source Voltage, VDS–V
yfs -- I
Ta=--25
75°C
--1.0 --10
Drain Current, ID–A
SW Time -- I
D
°C
25°C
td(off)
100
7
5
3
Switching Time, SW Time – ns
2
10
2.5
23 57 2357 2
--0.1
t
f
t
r
td(on)
--1.0 --10
Drain Current, ID–A
P
-- Ta
D
D
VDS=--10V
DS
Ciss
Coss
Crss
VDD=--15V
VGS=--10V
IT01581
f=1MHz
IT01583
IT01585
FSS132
--30
I
-- V
F
°C
Ta=75
25°C
SD
°C
-25
--100
7
5
3
2
--10
7
5
3
–A
2
F
--1.0
7
5
3
2
--0.1
7
5
3
2
Forward Current, I
--0.01
7
5
3
2
--0.001
0 --0.2 --0.4 --0.6 --0.8 --1.0
Diode Forward Voltage, VSD–V
--10
VDS=--10V
--9
ID=--7A
V
--8
–
GS
--7
--6
--5
--4
--3
--2
Gate-to-Source Voltage, V
--1
0
0 5 10 15 20 3025
--100
7
IDP=--48A
5
3
2
ID=--7A
--10
7
5
–A
3
D
2
,I
--1.0
7
5
3
2
Drain Current
--0.1
7
5
3
2
--0.01
--0.01
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm2×0.8mm)
23 57 23 57 7
Drain-to-Source Voltage, VDS–V
VGS -- Qg
Total Gate Charge, Qg – nC
A S O
DC operation
--0.1
23 5 723 5
--1.0 --10
10ms
100ms
<10µs
1ms
VGS=0
IT01582
IT01584
100µs
IT01586
--1.2
35
--100
–W
2.0
D
1.8
1.5
1.0
0.5
Mounted on a ceramic board (1200mm
2
×0.8mm)
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT01587
No.6398-3/4
Page 4
FSS132
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
PS No.6398-4/4
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