
FJV3115R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
FJV3115R
Marking
R35
Equivalent Circuit
R1
B
R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 10 V
Collector Current 100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Co llector-E mitter Saturat ion Voltage IC=10mA, IB=0.5mA 0.3 V
V
CE
f
T
C
ob
V
(off) Input Off Voltage VCE=5V, IC=100µΑ 0.3 V
I
(on) Input On Voltage VCE=0.3V, IC=20mA 3 V
V
I
R
1
R
1/R2
Collector-Base Breakdown Voltage IC=10µA, IE=0 50 V
Collector-Emitter Breakdown Voltage IC=100µA, IB=0 50 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=10mA 33
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Output Capacitance VCB=10V, IE=0
Input Resistor 1.5 2.2 2.9 KΩ
Resistor Ratio 0.20 0.22 0.25
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
3.7 pF
f=1.0MHz
C
E
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002

Typical Characteristics
FJV3115R
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
1
0.1
VCE = 5V
R1 = 2.2K
R2 = 10K
VCE = 5V
R1 = 2.2K
R2 = 10K
10
1
(on)[V], IN P U T VO L TAGE
I
V
0.1
0.1 1 10 100
VCE = 5V
R1 = 2.2K
R2 = 10K
IC[mA], COLLECTOR CURRENT
Figure 2. Input On Voltage
280
240
200
160
120
A], COLLECTOR CURRENT
µ
[
C
I
0.01
0.2 0.4 0.6 0.8 1.0 1.2
VI(off)[V], INPUT OFF V OLTAGE
Figure 3. Input Off Voltage
80
[mW], PO WER DISSI PA T ION
C
40
P
0
0255075100125150175
Ta[oC], AMBIENT TEMPERATURE
Figure 4. Power Derat ing
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002

Package Dimensions
0.40
±0.03
FJV3115R
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002

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2
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E
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®
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C™
I
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®
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.